NDS0610 General Description These P-Channel enhancement mode

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NDS0610 General Description These P-Channel enhancement mode

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NDS0610
NDS0610
General Description
These P-Channel enhancement mode field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process been designed minimize onstate resistance, provide rugged reliable performance fast switching. They used, with minimum effort, most applications requiring 120mA deliver current This product particularly suited voltage applications requiring current high side switch.
Features
-0.12A, -60V. RDS(ON) RDS(ON) -4.5 Voltage controlled p-channel small signal switch High density cell design RDS(ON)
High saturation current
SOT-23
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation Derate Above 25°C
Parameter
Ratings
(Note
Units
mW/°C
-0.12 0.36 +150
(Note
Operating Storage Junction Temperature Range Maximum Lead Temperature Soldering Purposes, 1/16" from Case Seconds
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note
°C/W
Package Marking Ordering Information
Device Marking Device NDS0610 Reel Size Tape width Quantity 3000 units
2002 Fairchild Semiconductor Corporation
NDS0610 B(W)
NDS0610
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage.
(Note
Test Conditions
µA,Referenced 25°C
Units
mV/°C
Characteristics
-200
V,VGS 125°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS,
mA,Referenced 25°C -0.5 -4.5 -0.25 V,ID -0.5 A,TJ=125°C -10V,
-1.7
-3.5
mV/°C
ID(on)
-0.6
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
0.12 RGEN
12.6
-0.5
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge -0.24 A(Note -0.8
(Note
-0.24 -1.5
-0.5A diF/dt A/µs
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
350°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width Duty Cycle 2.0%
NDS0610 B(W)
NDS0610
Typical Characteristics
VGS=-10V
-ID, DRAIN CURRENT
-4.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V VGS=-3.0V -3.5V -4.0V -4.5V -6.0V -10V
-6.0V -3.5V
-3.0V
-2.5V
-VDS, DRAIN SOURCE VOLTAGE
-ID, DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
-0.5A -10V
-0.25A
125oC
25oC
-VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
-55oC 125oC
-ID, DRAIN CURRENT -VGS, GATE SOURCE VOLTAGE
-IS, REVERSE DRAIN CURRENT
-10V
25oC
125oC 25oC 0.01 -55oC 0.001
0.0001 -VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
NDS0610 B(W)
NDS0610
Typical Characteristics
-VGS, GATE-SOURCE VOLTAGE -0.5A -48V -12V -24V
CISS CAPACITANCE (pF)
COSS CRSS
GATE CHARGE (nC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
-ID, DRAIN CURRENT
100us RDS(ON) LIMIT 10ms 100ms -10V SINGLE PULSE 350oC/W 25oC
SINGLE PULSE 350°C/W 25°C
0.01
0.001 -VDS, DRAIN-SOURCE VOLTAGE
0.01
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t) 350oC/W P(pk) RJA(t) Duty Cycle,
0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
NDS0610 B(W)
TRADEMARKS
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
Rev.

NDS0610 General Description These P-Channel enhancement mode

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