NDS351AN N-Channel, Logic Level, PowerTrench® MOSFET General

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NDS351AN N-Channel, Logic Level, PowerTrench® MOSFET General

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NDS351AN
NDS351AN
N-Channel, Logic Level, PowerTrench® MOSFET
General Description
These N-Channel Logic Level MOSFETs produced using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance maintain superior switching performance. These devices particularly suited voltage applications notebook computers, portable phones, PCMCIA cards, other battery powered circuits where fast switching, in-line power loss needed very small outline surface mount package.
Features
RDS(ON) RDS(ON)
Ultra-Low gate charge Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design superior thermal electrical capabilities High performance trench technology extremely RDS(ON)
SuperSOT
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
(Note
Units
0.46 +150
Power Dissipation Single Operation
(Note (Note
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W
Package Marking Ordering Information
Device Marking 351A Device NDS351AN Reel Size Tape width Quantity 3000 units
©2003 Fairchild Semiconductor Corporation
NDS351AN E(W)
NDS351AN
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
Units
Characteristics
µA,Referenced 25°C ±100 mV/°C
55°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS,
mV/°C
µA,Referenced 25°C 125°C 4.5V,
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge 0.42
(Note
0.42
diF/dt A/µs
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
250°C/W when mounted 0.02 copper.
270°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width Duty Cycle 2.0%
NDS351AN E(W)
NDS351AN
Typical Characteristics
6.0V
DRAIN CURRENT
4.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5V
3.5V
4.0V 4.5V 5.0V 6.0V
3.0V
VDS, DRAIN SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.25 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.4A
0.7A 0.225 0.175 125oC 0.15 0.125 0.075
25oC
JUNCTION TEMPERATURE
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
REVERSE DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
DRAIN CURRENT
125oC
25oC
0.01
125oC 25oC -55oC VGS, GATE SOURCE VOLTAGE
-55oC
0.001
0.0001 VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
NDS351AN E(W)
NDS351AN
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE
=1.4A
CAPACITANCE (pF)
CISS
COSS CRSS
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
DRAIN CURRENT
RDS(ON) LIMIT 10ms 100ms SINGLE PULSE 270oC/W 25oC
100µs
SINGLE PULSE 270°C/W 25°C
0.01 VDS, DRAIN-SOURCE VOLTAGE
0.01
1000
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t) P(pk) RJA(t) Duty Cycle,
0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
NDS351AN E(W)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFACT Quiet SeriesActiveArrayFAST board. Around world.The Power FranchiseProgrammable Active DroopDISCLAIMER
OPTOPLANARPACMANPOP
Power247PowerTrench QFET QSQT OptoelectronicsQuiet SWITCHER SMART STARTSPMStealthSuperSOTTM-3
SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogic VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

NDS351AN N-Channel, Logic Level, PowerTrench® MOSFET General

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