NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET

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NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET

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NDS8425
NDS8425
Single N-Channel, 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET produced using Fairchild Semiconductor's advanced Power Trench process that been especially tailored minimize on-state resistance maintain gate charge superior switching performance. These devices have been designed offer exceptional power dissipation very small footprint package.
Features
RDS(ON) 0.022 RDS(ON) 0.028
Fast switching speed gate charge (11nC typical) High performance trench technology extremely RDS(ON) High power current handling capability widely used surface mount package
Applications
DC/DC converter Load switch
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
±7.4 +150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking NDS8425 Device NDS8425 Reel Size 13'' Tape width 12mm Quantity 2500 units
2001 Fairchild Semiconductor International
NDS8425
NDS8425
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
250µA Referenced 25°C V,VGS TJ=55°C
Units
Characteristics
-100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS, Referenced 25°C TJ=125°C VGS=2.7 =7.2A
0.89
mV/°C
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
1098
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
0.72
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°/W when mounted copper
105°/W when mounted copper
125°/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
NDS8425
NDS8425
Typical Characteristics
4.5V 2.0V 4.0V 3.5V 3.0V 2.5V
2.0V
2.5V 3.0V 3.5V 4.0V
1.5V VDS, DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.08
7.4A 4.5V
0.07 0.06 0.05
0.04 0.03
0.02 0.01 JUNCTION TEMPERATURE VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
0.01 0.001 0.0001
VGS, GATE SOURCE VOLTAGE
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
NDS8425
NDS8425
Typical Characteristics (continued)
7.4A 1500 CISS 1200 1MHz
COSS CRSS
12.0 16.0 20.0
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
RDS(ON) LIMIT 100µs 10ms 100ms 4.5V SINGLE PULSE 0.01 0.001
Figure Capacitance Characteristics.
SINGLE PULSE
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE
TIME (SEC)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
0.05 0.02 0.01 0.01 SINGLE PULSE RJA(t) r(t) °C/W P(pk) RJA(t) Duty Cycle, TIME (sec) 1000
0.001 0.0001 0.001 0.01
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
NDS8425
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST
DISCLAIMER
PowerTrench QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER SMART STARTSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTinyLogicUHCVCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET

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