25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel powe

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25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel powe

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RFP25N06, RF1S25N06, RF1S25N06SM
25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
These N-Channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those integrated circuits gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers, relay drivers. These transistors operated directly from integrated circuits. Formerly developmental type TA09771.
Features
25A, rDS(ON) 0.047 Temperature Compensating PSPICE® Model Peak Current Pulse Width Curve Rating Curve 175oC Operating Temperature Related Literature TB334, "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP25N06 RF1S25N06 RF1S25N06SM PACKAGE TO-220AB TO-262AA TO-263AB BRAND RFP25N06 F1S25N06 F1S25N06
Symbol
NOTE: When ordering entire part number. suffix, obtain TO-263AB variant tape reel, e.g. RF1S25N06SM9A.
Packaging
JEDEC 220AB
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN (FLANGE)
JEDEC TO-262AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev.
RFP25N06, RF1S25N06, RF1S25N06SMS
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP25N06, RF1S25N06, RF1S25N06SM (Figure (Figure 0.48 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Continuous Drain Current (Figure Pulsed Drain Current Single Pulse Avalanche Rating Power Dissipation Linear Derating Factor Operating Storage Junction Temperature Range TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure VDS, 250µA (Figure 25oC 150oC 48V, 25A, 1.92 Ig(REF) 0.75mA (Figure (Figure ±100 0.047 2.083 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Source Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS
±20V 25A, (Figure 30V, 12.5A 2.4, (Figure
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time SYMBOL 25A, dISD/dt 100A/µs TEST CONDITIONS UNITS
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev.
RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves
Unless Otherwise Specified
POWER DISSIPATION MULTIPLIER
CASE TEMPERATURE (oC) DRAIN CURRENT
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
THERMAL IMPEDANCE 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 NOTES: DUTY FACTOR: t1/t2 PEAK 10-2 10-1 10-3 RECTANGULAR PULSE DURATION
ZJC, NORMALIZED
10-4
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
DRAIN CURRENT
25oC RATED SINGLE PULSE IDM, PEAK CURRENT
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY FOLLOWS:
100µs OPERATION THIS AREA LIMITED rDS(ON)
10ms 100ms VDS, DRAIN SOURCE VOLTAGE
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-4 10-3 10-2 10-1 PULSE WIDTH
25oC
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev.
RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves
IAS, AVALANCHE CURRENT DRAIN CURRENT STARTING 25oC 4.5V VDS, DRAIN SOURCE VOLTAGE PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC
Unless Otherwise Specified (Continued)
STARTING 150oC (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) 0.01 tAV, TIME AVALANCHE (µs)
NOTE: Refer Fairchild Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE SATURATION CHARACTERISTICS
DRAIN CURRENT 175oC PULSE DURATION 80µs DUTY CYCLE 0.5% NORMALIZED DRAIN SOURCE RESISTANCE -55oC 25oC
PULSE DURATION 80µs DUTY CYCLE 0.5% 10V,
VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE TRANSFER CHARACTERISTICS
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
NORMALIZED DRAIN SOURCE 250µA NORMALIZED GATE THRESHOLD VOLTAGE
250µA BREAKDOWN VOLTAGE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev.
RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves
1600 1MHz CISS CRSS COSS
Unless Otherwise Specified (Continued)
DRAIN SOURCE VOLTAGE BVDSS BVDSS GATE SOURCE VOLTAGE
CAPACITANCE (pF)
1200
CISS
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS Ig(REF) 0.75mA TIME (µs)
COSS
CRSS
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
tOFF td(OFF)
td(ON)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev.
RFP25N06, RF1S25N06, RF1S25N06SM Test Circuits Waveforms
(Continued)
Qg(TOT)
Qg(10) Qg(TH) Ig(REF)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev.
RFP25N06, RF1S25N06, RF1S25N06SM PSPICE Electrical Model
.SUBCKT RFP25N06 8/19/94
1.83e-9 1.98e-9 9.7e-10
DPLCAP LDRAIN RSCL1 RSCL2 ESCL RDRAIN MOS1 RSOURCE LSOURCE SOURCE DBREAK
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 65.9 EVTO
GATE
DRAIN
EVTO
EBREAK MOS2
DBODY
LDRAIN 1e-9 LGATE 4.92e-9 LSOURCE 4.5e-9
LGATE
RGATE
MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 1.1e-3 RGATE 2.88 RSCL1 RSCLMOD 1e-6 RSCL2 RSOURCE RDSMOD 20.3e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
RBREAK RVTO VBAT
VBAT 0.764 ESCL VALUE .MODEL DBDMOD 2.32e-13 5.72e-3 TRS1 2.56e-3 TRS2 -5.13e-6 1.18e-9 5.62e-8) .MODEL DBKMOD 2.00e-1 TRS1 3.33e-4 TRS2 2.68e-6) .MODEL DPLCAPMOD (CJO 6.55e-10 1e-30 .MODEL MOSMOD NMOS (VTO 3.89 15.03 1e-30 .MODEL RBKMOD (TC1 1.04e-3 -1.04e-6) .MODEL RDSMOD (TC1 5.85e-3 1.77e-5) .MODEL RSCLMOD (TC1 2.0e-3 1.5e-6) .MODEL RVTOMOD (TC1 -5.35e-3 -3.77e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -5.04 VOFF= -3.04) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -3.04 VOFF= -5.04) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -3.02 VOFF= 1.98) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF 1.98 VOFF= -3.02) .ENDS NOTE: further discussion PSPICE model consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; written William Hepp Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel powe

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