File Number 9046 Radiation Hardened CMOS Dual SPDT Analog Sw

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File Number 9046 Radiation Hardened CMOS Dual SPDT Analog Sw

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HS-303RH
File Number
9046
Radiation Hardened CMOS Dual SPDT Analog Switch
HS-303RH analog switch monolithic device fabricated using Radiation Hardened CMOS technology Intersil dielectric isolation process latch-up free operation. Improved total dose hardness obtained layout (thin oxide tabs extending channel stop) processing (hardened gate oxide). This switch offers lowresistance switching performance analog voltages supply rails. "ON" resistance stays reasonably constant over full range operating voltage current. "ON" resistance also stays reasonably constant when exposed radiation, being typically pre-rad post 100kRAD(Si). Break-before-make switching controlled digital inputs.
Features
QML, MIL-PRF-38535 Radiation Performance Gamma Dose RAD(Si) Latch-Up, Dielectrically Isolated Device Islands Compatible with Intersil HI-303 Series Analog Switches Analog Signal Range Leakage 100nA (Max, Post Rad) (Max, Post Rad) Operating Power 100µA (Max, Post Rad)
Pinouts
HS1-303RH (SBDIP), CDIP2-T14 VIEW
Specifications
Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications HS-303RH contained 5962-95813. "hot-link" provided from website downloading
Ordering Information
ORDERING NUMBER 5962R9581301QCC 5962R9581301QXC 5962R9581301VCC 5962R9581301VXC HS1-303RH/PROTO HS9-303RH/PROTO PART NUMBER HS1-303RH-8 HS9-303RH-8 HS1-303RH-Q HS9-303RH-Q HS1-303RH/PROTO HS9-303RH/PROTO TEMP. RANGE (oC)
HS9-303RH (FLATPACK) CDFP3-F14 VIEW
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Intersil (and design) trademark Intersil Americas Inc. Copyright Intersil Americas Inc. 2001. Rights Reserved
HS-303RH Functional Diagram
SBDIP TRUTH TABLE
LOGIC
SW1AND
Characteristics
DIMENSIONS: (2130µm 1930µm 279µm ±25.4µm) 11mils ±1mil METALLIZATION: Type: Thickness: SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Gold PASSIVATION: Type: Silox (SiO2) Thickness: WORST CASE CURRENT DENSITY: 2.0e5 A/cm2 TRANSISTOR COUNT: PROCESS: Metal Gate CMOS, Dielectric Isolation
Metallization Mask Layout
HS-303RH-T
Intersil products manufactured, assembled tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications viewed www.intersil.com/design/quality
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design, software and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, www.intersil.com

File Number 9046 Radiation Hardened CMOS Dual SPDT Analog Sw

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