FN4606.1 Radiation Hardened Noise Quad Operational Amplifier
|
|
|
Top Searches for this datasheet
HS-5104ARH-T
FN4606.1
Radiation Hardened Noise Quad Operational Amplifier
Intersil`s Satellite Applications Flow (SAF) devices fully tested guaranteed 100kRAD total dose. These Class devices processed standard flow intended meet cost shorter lead-time needs large volume satellite manufacturers, while maintaining high level reliability. HS-5104ARH-T radiation hardened, monolithic quad operational amplifier that provides highly reliable performance harsh radiation environments. excellent noise characteristics coupled with unique array dynamic specifications make this amplifier well-suited variety satellite system applications. Dielectrically isolated, bipolar processing makes this device immune Single Event Latch-up. HS-5104ARH-T shows almost change offset voltage after exposure 100K RAD(Si) gamma radiation, with only minor increase current. Complementing these specifications post radiation open loop gain excess 40K. This quad operational amplifier available industry standard pinout, allowing immediate interchangeability with most other quad operational amplifiers.
website. www.intersil.com/ Class MIL-PRF-38535 Radiation Performance Gamma Dose RAD(Si) Latch-Up, Dielectrically Isolated Device Islands Noise 1kHz 4.3nV/Hz (Typ) 1kHz 0.6pA/Hz (Typ) Offset Voltage. .3.0mV (Max) High Slew Rate 2.0V/µs (Typ) Gain Bandwidth Product 8.0MHz (Typ)
Pinouts
HS1-5104ARH-T (SBDIP), CDIP2-T14 VIEW
-IN1 +IN1 +IN2
-IN4 +IN4 +IN3 -IN3
Specifications
Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications HS-5104ARH-T contained 5962-95690. more information, visit website www.intersil.com/ Intersil`s Quality Management Plan Plan), listing Class screening operations, also available
-IN1 +IN1 +IN2 -IN2
-IN2
HS9-5104ARH-T (FLATPACK), CDFP3-F14 VIEW
-IN4 +IN4 V+IN3 -IN3
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Intersil (and design) trademark Intersil Americas Inc. Copyright Intersil Americas Inc. 2002. Rights Reserved Satellite Applications Flow(SAF) trademark Intersil Corporation.
HS-5104ARH-T Characteristics
DIMENSIONS: (2420µm 2530µm 483µm ±25.4µm) 19mils ±1mil METALLIZATION: Type: Thickness: SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Silicon PASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2) Nitride Thickness: Silox Thickness: WORST CASE CURRENT DENSITY: 2.0e5 A/cm TRANSISTOR COUNT: PROCESS: Bipolar
Metallization Mask Layout
HS-5104ARH-T
+IN2 +IN1
-IN2
-IN1
OUT2 OUT3
OUT1 OUT4
-IN3
-IN4
+IN3
+IN4
Intersil U.S. products manufactured, assembled tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications viewed www.intersil.com/design/quality
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design, software and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, www.intersil.com
Other recent searches
VHC14 - VHC14 VHC14 Datasheet
SMZ200 - SMZ200 SMZ200 Datasheet
NJU7307 - NJU7307 NJU7307 Datasheet
IS61LV256AL - IS61LV256AL IS61LV256AL Datasheet
2SC4944 - 2SC4944 2SC4944 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
