µPA1871 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

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µPA1871 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

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FIELD EFFECT TRANSISTOR
µPA1871
N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING
DESCRIPTION
µPA1871 switching device which driven directly 2.5-V power source. µPA1871 features on-state resistance excellent switching characteristics, suitable applications such power switch portable machine
PACKAGE DRAWING (Unit:
:Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
MAX. 1.0±0.05 0.25 0.1±0.05 +0.15 -0.1
FEATURES
driven 2.5-V power source on-state resistance RDS(on)1 26.0 MAX. (VGS RDS(on)2 27.0 MAX. (VGS RDS(on)3 38.0 MAX. (VGS Built-in protection diode against
0.145 ±0.055
3.15 ±0.15 ±0.1
±0.2 ±0.1 ±0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65 0.27
+0.03 -0.08
PA1871GR-9JG
MAX. 0.10
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
±6.0
Gate1 Gate Protection Diode Source1 Drain1 Drain2
VDSS VGSS ID(DC) ID(pulse) Tstg
Body Diode
Gate2 Gate Protection Diode Source2
Body Diode
Total Power Dissipation Channel Temperature Storage Temperature
+150
Notes Duty Cycle Mounted ceramic substrate Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G14887EJ1V0DS00 (1st edition) Date Published November 2000 CP(K) Printed Japan
2000
µPA1871
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) di/dt TEST CONDITIONS VGS(on) 15.0 16.0 21.0 20.5 21.5 27.8 0.80 26.0 27.0 38.0 MIN. TYP. MAX. UNIT
TEST CIRCUIT SWITCHING TIME
TEST CIRCUIT GATE CHARGE
D.U.T. Duty Cycle
Wave Form
Wave Form
VGS(on)
D.U.T.
td(on)
td(off)
toff
Data Sheet G14887EJ1V0DS
µPA1871
TYPICAL CHARACTERISTICS 25°C)
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Derating Factor
Drain Current
ID(DC)
Single Pulse (FET1) (FET2)
Ambient Temperature
0.01
10.0
100.0
Drain Source Voltage
DRAIN CURRENT DRAIN SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
Drain Current
Drain Current
0.01 0.001 0.0001
125°C 75°C 25°C -25°C
0.00001
Drain Source Voltage
Gate Source Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT 100000
VGS(off) Gate Cut-off Voltage
10000
1000
-25°C 25°C 75°C 125°C
0.100
0.010 0.01
Channel Temperature
Drain Current
Data Sheet G14887EJ1V0DS
µPA1871
RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
125°C
125°C 75°C 25°C
75°C
25°C -25°C
-25°C
0.01
0.01
Drain Current DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Drain Current
RDS(on) Drain Source On-state Resistance
(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
125°C 75°C 25°C -25°C
0.01
Drain Current
Channel Temperature
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
Ciss, Coss, Crss Capacitance
1000
Ciss
Coss Crss
Drain Source Voltage
Gate Source Voltage
Data Sheet G14887EJ1V0DS
µPA1871
SWITCHING CHARACTERISTICS 1000
td(on), td(off), Switching Time
SOURCE DRAIN DIODE FORWARD VOLTAGE
td(off)
Source Drain Current
td(on)
VGS(on) Drain Current
0.01
VF(S-D) Body Diode Forward Voltage
DYNAMIC INPUT CHARACTERISTICS
Gate Source Voltage
Gate Charge
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(ch-A) Transient Thermal Resistance °C/W
62.5 °C/W
Single Pulse Mounted Ceramic Board PD(FET1) PD(FET2) Pulse Width 1000
Data Sheet G14887EJ1V0DS
µPA1871
[MEMO]
Data Sheet G14887EJ1V0DS
µPA1871
[MEMO]
Data Sheet G14887EJ1V0DS
µPA1871
information this document current November, 2000. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA1871 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

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