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M-Bit Dual-Operation Flash Memory with Single 1.8V Power Supply: MBM29DS323TE/BE
Dual-operation flash memory performs simultaneous read/program/erase operations combines voltage with high performance.
Features
Single 1.8V power supply High-speed access capability Dual operation Hi-ROM region Write protection Accelerated program operation Automatic sleep mode
Product Overview
Recent advances lower-power battery drives being pushed demand longer usage times products such portable telephones portable information terminals, combined with higher performance levels browsing image loading over Internet connections. Also, because such devices faster processors, requirements enhanced system capability fueling demand flash memories with ever-larger density, lower voltage, faster read times. FUJITSU responded this demand developing MBM29DS323TE/BE M-bit dual-operation flash memory capable operating single 1.8V power supply performing simultaneous read/program/erase operations.
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principal advantages this product, addition 1.8V operation dual-operation function, include high-speed access capability. conserve power consumption, automatic sleep mode reduces power consumption levels whenever device accessed within fixed time. Other features include Hi-ROM, write-protection, acceleration functions.
while reading data from sector bank vice versa). This ideal products, such cellular telephones, that require frequent reprogram operations.
High-Speed Access Capability
MBM29DS323TE/BE, even with single 1.8V operation, achieves high performance with read time (min.), byte program time (typ.), word program time (typ.).
Product Features
Single 1.8V Power Supply
MBM29DS323TE/BE capable data read/program/erase operation from single 1.8V power supply. Operation flash memory from voltage requires that input voltage stepped inside chip, which accomplished using two-step boost circuit. This circuit makes possible maintain supply voltage with minimal increase chip size, while assuring sufficient operating margin low-voltage side. Also, circuit assures sufficient word line voltage, making possible same cell structure existing high-reliability flash memories.
read time (min.), byte program time
(typ.), word program
time (typ.)."
Hi-ROM Functions
addition normal memory area, special area K-byte provided programming special data, such unique numbers. This used combination with applications provide high level security.
Write-Protection Function
This simple, hardware-based write-protect function. When WP#/ACC goes level regardless whether normal sector protection applied, write protection simultaneously applied outermost sectors small sectors K-byte lower (MBM29DS323BE) upper (MBM29DS323TE) address.
Dual-Operation Functions
dual-operation, device divided into areas (bank bank This makes possible perform erase program operation sector bank
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TSOP
RESET N.C. WP/ACC RY/BY
Pinout
BYTE DQ15/A-1 DQ14 DQ13 DQ12 DQ11 DQ10
FPT-48P-M19
RY/BY WP/ACC N.C. RESET
Reverse Pinout
DQ10 DQ11 DQ12 DQ13 DQ14 DQ15/A-1 BYTE
FPT-48P-M20
FBGA (top view)
N.C. N.C.
(marking side)
N.C. N.C.
N.C. N.C. BYTE DQ15/ N.C. N.C. DQ14DQ13 RESET N.C. DQ12 RY/BY DQ10DQ11
N.C. N.C. N.C. N.C. N.C.
N.C. N.C.
(BGA-63P-M01)
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previous flash memories, sector protection released temporarily applying high voltage (VID) RESET# pin, leading possibility that necessary data could unintentionally modified. Now, write-protection function applied even during such temporary release sector-protection functions.
Figure (see shows assignments, Figure shows relation access time supply voltage. Table (see lists models product line.
Accelerated Program Function
This function effective programming large numbers flash memories, such during installation systems before delivery from factory. Applying high voltage (VHH) WP#/ACC places chip acceleration mode, allowing programming faster-than-normal speeds. This reduce program times normal.
Advantages Effectiveness
Contributes System Efficiency
Reducing operating voltage flash memory contributes substantially extending battery life entire system.
Automatic Sleep Mode
During read operations, whenever address changed longer, flash memory device automatically reduces power consumption (from maximum during read operation typical level µA). This effective portable terminal devices requiring power consumption. Normal read operation restored automatically when address changed.
Eliminates External ROM/RAM
dual-operation function allows flash memory reprogramming executed directly performing erase program operations memory itself, without having load
greatly reduces
system cost, mounting
area, power consumption."
program from another memory. This greatly reduces system cost, mounting area, power consumption.
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tACC 2.20 2.10 2.00 1.90 1.80
(STEP 2.000 (ns)
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Enables Effective Program Erase Times
During erase/program processing sector, address switched another bank read data from that address without interrupting erase/program operation. Thus, switching address another bank, internal data flash memory freed from carrying status information returned original purpose memory chip, namely output stored information. Software devised reduce apparent erase/program time until approaches zero, thereby enhancing processing speed products containing dual-operation flash memory.
SoFFS Software
FUJITSU's Sophisticated Flash File System (SoFFS) software provides functions such control program unit size reduction program/erase timing. This software emulates small customer-designated program unit sizes flash memory viewed from operating system application software eliminates need erasing before reprogramming. Additional functions, such garbage collection wear leveling, shorten sector erase time extend erase cycle length viewed from operating system application. SoFFS currently great number clients' systems worldwide, contributing significantly only multi-function, space-saving, durable systems, also shorter overall system development times.
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MBM29DS323TE/BE 10/12 Bank Bank ns/120 1.8V 2.2V 35.2 35.2 55.0 1s/sector TSOP-48 FBGA-63
Bank Division Access Time (max.) Power Supply Voltage Byte Power Consumption (max.) Read Word Erase/Program CMOS Standby Erase Time (typ.) Program Time (typ.) Package Byte Word
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Applications
single 1.8V, dual-operation flash memory suited applications, such following: Systems requiring built-in flash memories with low-voltage operation multiple functions both reduced power high performance Systems requiring updating programs code Systems storing parameters, data EEPROM devices Systems using external Systems requiring frequent reprogramming operations
Future Development
This article introduced MBM29DS323TE/BE, product designed solution primarily reduced power high performance portable information devices. FUJITSU already provided wide variety flash memory devices response requirements customers, intend continue expand product line. future, FUJITSU planning continue provide family products with lower voltage, higher capability, higher density response requests customers.
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