FDS6685 P-Channel PowerTrench® MOSFET General Description

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FDS6685 P-Channel PowerTrench® MOSFET General Description

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FDS6685
FDS6685
P-Channel PowerTrench® MOSFET
General Description
This -Channel MOSFET rugged gate version Fairchild Semiconductor's advanced PowerTrench process. been optimized power management applications requiring wide range gave drive voltage ratings (4.5V 25V).
Features
-8.8 RDS(ON) RDS(ON) -4.5
gate charge (17nC typical) Fast switching speed High performance trench technology extremely RDS(ON) High power current handling capability
Applications
Power management Load switch Battery protection
SO-8
SO-8
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
(Note
Units
-8.8 +175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note (Note
°C/W °C/W °C/W
Package Marking Ordering Information
Device Marking FDS6685
©2001 Fairchild Semiconductor Corporation
Device FDS6685
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS6685 D(W)
FDS6685
Electrical Characteristics
Symbol
IDSS IGSSF IGSSR GS(th) GS(th) RDS(on)
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
-250 -250 Referenced 25°C
Units
Characteristics
-100 -1.7 mV/°C mV/°C
Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
-250 -250 Referenced 25°C -8.8 -4.5 -6.7 -8.8A, =125°C -8.8
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
1604
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
13.5
-8.8
Drain-Source Diode Characteristics Maximum Ratings
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage
-2.1
(Note
-0.73
-1.2
50°C/W when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6685 D(W)
FDS6685
Typical Characteristics
-10V -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V GS=-4.5V -4.0V -4.5V -5.0V -6.0V -7.0V -8.0V DRAIN SOURCE VOLTAGE DRAIN CURRENT -10V
-ID, DRAIN CURRENT
-3.5V -3.0V
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.07 RDS(ON) ON-RESISTANCE (OHM)
RDS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE -8.8A -10V
-4.4A 0.06 0.05
0.04 0.03 0.02 0.01
JUNCTION TEMPERATURE
GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
REVERSE DRAIN CURRENT DRAIN CURRENT 125oC
Figure On-Resistance Variation with Gate-to-Source Voltage.
125o -55o 0.01
0.001
GATE SOURCE VOLTAGE
0.0001 BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6685 D(W)
FDS6685
Typical Characteristics
GATE-SOURCE VOLTAGE -8.8A -15V CAPACITANCE (pF) 1500 -10V 2000 CISS 2500
1000 COSS CRSS
GATE CHARGE (nC)
DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
100µ 10ms 100ms -10V SINGLE PULSE 125o 0.01 DRAIN-SOURCE VOLTAGE P(pk), PEAK TRANSIENT POWER RDS(ON) LIMIT -ID, DRAIN CURRENT
Figure Capacitance Characteristics.
SINGLE PULSE 125°C/W 25°C
0.001
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t)
0.05 0.02 0.01
P(pk) RJA(t) Duty Cycle,
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6685 D(W)

FDS6685 P-Channel PowerTrench® MOSFET General Description

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