FDS6680S N-Channel PowerTrench SyncFETGeneral Description FD

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FDS6680S N-Channel PowerTrench SyncFETGeneral Description FD

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FDS6680S
FDS6680S
N-Channel PowerTrench SyncFETGeneral Description
FDS6680S designed replace single SO-8 MOSFET Schottky diode synchronous DC:DC power supplies. This MOSFET designed maximize power conversion efficiency, providing RDS(ON) gate charge. FDS6680S includes integrated Schottky diode using Fairchild's monolithic SyncFET technology. performance FDS6680S low-side switch synchronous rectifier indistinguishable from performance FDS6680 parallel with Schottky diode.
Features
11.5 RDS(ON) 0.011 RDS(ON) 0.017
Includes SyncFET Schottky body diode gate charge (17nC typical) High performance trench technology extremely RDS(ON) fast switching High power current handling capability
Applications
DC/DC converter Motor drives
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
11.5 +150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6680S
2000 Fairchild Semiconductor Corporation
Device FDS6680S
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS6680S
FDS6680S
Electrical Characteristics
Symbol
BVDSS BVDSS ===TJ IDSS IGSSF IGSSR VGS(th) VGS(th) ===TJ RDS(on)
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
Referenced 25°C
Units
Characteristics
-100 -3.3 13.5 2010 11.5
(Note (Note (Note
mV/°C mV/°C
Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
VGS, Referenced 25°C 11.5 VGS=10 =11.5A, TJ=125°C 11.5
ID(on) Ciss Coss Crss td(on) td(off)
Dynamic Characteristics
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge 11.5A, diF/dt A/µs 0.45 19.7
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°/W when mounted copper
105°/W when mounted copper
125°/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% "SyncFET Schottky body diode characteristics" below.
FDS6680S
FDS6680S
Typical Characteristics
5.0V 4.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 7.0V 4.0V DRAIN CURRENT 4.5V 5.0V 6.0V
DRAIN CURRENT
3.5V
7.0V 8.0V
3.0V
VDS, DRAIN-SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.04 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 11.5A
0.03
0.02 100oC 0.01 25oC
JUNCTION TEMPERATURE (oC)
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
DRAIN CURRENT 100oC -55oC 25oC
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
100oC 25oC
0.01
-55oC
VGS, GATE SOURCE VOLTAGE
0.001 VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6680S
FDS6680S
Typical Characteristics (continued)
VGS, GATE-SOURCE VOLTAGE =11.5A CAPACITANCE (pF)
3000 2500 2000 1500 1000 GATE CHARGE (nC) VDS, DRAIN SOURCE VOLTAGE COSS CRSS CISS 1MHz
Figure Gate Charge Characteristics.
RDS(ON) LIMIT 10ms SINGLE PULSE 125oC/W 25oC 0.01 VDS, DRAIN-SOURCE VOLTAGE 100ms 100µs P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
DRAIN CURRENT
SINGLE PULSE 125°C/W 25°C
0.01
1000
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.05 0.02
RJA(t) r(t) °C/W P(pk)
SINGLE PULSE
0.01
0.01
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6680S
FDS6680S
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds Schottky diode parallel with PowerTrench MOSFET. This diode exhibits similar characteristics discrete external Schottky diode parallel with MOSFET. Figure shows reverse recovery characteristic FDS6680S. Schottky barrier diodes exhibit significant leakage high temperature high reverse voltage. This will increase power device.
IDSS, REVERSE LEAKAGE CURRENT
0.01
100oC
Current: 3A/div
0.001 25oC
0.0001 VDS, REVERSE VOLTAGE
10nS/div
Figure SyncFET body diode reverse leakage versus drain-source voltage temperature.
Figure FDS6680S SyncFET body diode reverse recovery characteristic.
comparison purposes, Figure shows reverse recovery characteristics body diode equivalent size MOSFET produced without SyncFET (FDS6680).
Current: 3A/div
10nS/div
Figure Non-SyncFET (FDS6680) body diode reverse recovery characteristic.
FDS6680S
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST®
DISCLAIMER
QFETQSQT OptoelectronicsQuiet SeriesSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogicUHC
VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6680S N-Channel PowerTrench SyncFETGeneral Description FD

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