FDS6680A Single N-Channel, Logic Level, PowerTrench® MOSFET
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FDS6680A
FDS6680A
Single N-Channel, Logic Level, PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance maintain superior switching performance. These devices well suited voltage battery powered applications where in-line power loss fast switching required.
Features
12.5 RDS(ON) RDS(ON)
Ultra-low gate charge High performance trench technology extremely RDS(ON) High power current handling capability
SO-8
SO-8
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
(Note
Units
12.5 +150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note (Note
°C/W
Package Marking Ordering Information
Device Marking FDS6680A Device FDS6680A Reel Size 13'' Tape width 12mm Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDS6680A F(W)
FDS6680A
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS VGS(th) VGS(th) RDS(on)
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
Units
Characteristics
Referenced 25°C -4.9 11.0 1620
(Note
±100
mV/°C mV/°C
TJ=55°C
Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VGS, Referenced 25°C 12.5 10.5 12.5 TJ=125°C 12.5
ID(on) Ciss Coss Crss td(on) td(off)
0.73
Dynamic Characteristics
Switching Characteristics
RGEN
12.5
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward (Note Voltage Diode Reverse Recovery Time 12.5 diF/dt A/µs Diode Reverse Recovery Charge
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6680A F(W)
FDS6680A
Typical Characteristics
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.0V 4.5V 3.5V
3.5V 4.0V 4.5V 5.0V 6.0V
DRAIN CURRENT
6.0V
3.0V
VDS, DRAIN SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.03 RDS(ON) ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
12.5A
6.2A
0.025
0.02
125oC
0.015
0.01
25oC
0.005
JUNCTION TEMPERATURE
VGS, GATE SOURCE VOLTAGE
BFigure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
DRAIN CURRENT
125oC
25oC
125oC
-55oC
0.01 0.001 0.0001
25oC
VGS, GATE SOURCE VOLTAGE
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6680A F(W)
FDS6680A
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE 12.5A
2400 CAPACITANCE (pF)
1800
Ciss
1200
Coss
Crss
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
100µs RDS(ON) LIMIT
Figure Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER SINGLE PULSE 125oC/W 25oC
DRAIN CURRENT
10ms 100ms
SINGLE PULSE 125oC/W 25oC
0.01 0.01
VDS, DRAIN-SOURCE VOLTAGE
0.001
0.01
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t) P(pk)
SINGLE PULSE
0.05 0.02 0.01
0.01
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6680A F(W)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
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