FDS6679Z Volt P-Channel PowerTrench® MOSFET General Descript

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FDS6679Z Volt P-Channel PowerTrench® MOSFET General Descript

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FDS6679Z
FDS6679Z
Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers, battery chargers. These MOSFETs feature faster switching lower gate charge than other MOSFETs with comparable RDS(ON) specifications. result MOSFET that easy safer drive (even very high frequencies), DC/DC power supply designs with higher overall efficiency.
Features
RDS(ON) RDS(ON) Extended range (-25V) battery applications protection diode (note High performance trench technology extremely RDS(ON) High power current handling capability
SO-8
Absolute Maximum Ratings
Symbol
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
-25/+20
(Note
Units
+175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6679Z Device FDS6679Z Reel Size 13'' Tape width 12mm Quantity 2500 units
©2001 Fairchild Semiconductor Corporation
FDS6679Z
FDS6679Z
Electrical Characteristics
Symbol
IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
-250
Units
Characteristics
-250 µA,Referenced 25°C -250 -250 µA,Referenced 25°C -4.5 =-4.5 =-13A, =125°C -4.5 mV/°C
Characteristics
GS(th) GS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
-1.7
mV/°C
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
3803
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage
-2.1
(Note
-0.7
-1.2
50°C/W sec) 62.5°C/W steady state when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% diode connected between gate source serves only protection against ESD. gate overvoltage rating implied.
FDS6679Z C(W)
FDS6679Z
Typical Characteristics
-10V -6.0V DRAIN CURRENT -4.5V -3.5V RDS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5V DRAIN CURRENT -4.5V -5.0V -6.0V -7.0V -8.0V -10V
-3.0V
DRAIN SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.04
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE JUNCTION TEMPERATURE (oC) -13A -10V
-6.5A RDS(ON) ON-RESISTANCE (OHM) 0.03
0.02 125o
0.01
0.00 GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
125o REVERSE DRAIN CURRENT DRAIN CURRENT -55o
Figure On-Resistance Variation with Gate-to-Source Voltage.
125o
0.01
GATE SOURCE VOLTAGE
0.001 BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6679Z C(W)
FDS6679Z
Typical Characteristics
GATE-SOURCE VOLTAGE -13A CAPACITANCE (pF) -15V -10V
5000 4000 CISS
3000
2000 1000 CRSS
GATE CHARGE (nC)
DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
RDS(ON) LIMIT DRAIN CURRENT 10ms 100ms -10V SINGLE PULSE 125o 0.01 0.01 100µs P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
SINGLE PULSE 125°C/W 25°C
0.001
0.01
TIME (sec)
1000
DRAIN-SOURCE VOLTAGE
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
JA(t) r(t) P(pk) JA(t) Duty Cycle,
0.01
0.05 0.02
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6679Z C(W)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6679Z Volt P-Channel PowerTrench® MOSFET General Descript

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