FDS6679 Volt P-Channel PowerTrench® MOSFET General Descripti

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FDS6679 Volt P-Channel PowerTrench® MOSFET General Descripti

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FDS6679
FDS6679
Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers, battery chargers. These MOSFETs feature faster switching lower gate charge than other MOSFETs with comparable RDS(ON) specifications. result MOSFET that easy safer drive (even very high frequencies), DC/DC power supply designs with higher overall efficiency.
Features
RDS(ON) RDS(ON) Extended range (±25V) battery applications High performance trench technology extremely RDS(ON) High power current handling capability
SO-8
Absolute Maximum Ratings
Symbol
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
+175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6679 Device FDS6679 Reel Size 13'' Tape width 12mm Quantity 2500 units
©2001 Fairchild Semiconductor Corporation
FDS6679
FDS6679
Electrical Characteristics
Symbol
IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
-250 -250 Referenced 25°C -250 -250 Referenced 25°C -4.5 =-10 =-13 =125°C
Units
Characteristics
-100 mV/°C
Characteristics
GS(th) GS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
-1.6
mV/°C
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
3939
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage
-2.1
(Note
-0.7
-1.2
50°C/W sec) 62.5°C/W steady state when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6679 C(W)
FDS6679
Typical Characteristics
-10V -6.0V -ID, DRAIN CURRENT -4.5V -3.0V -4.0V RDS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.5V
-3.0V
-3.5V -4.0V -4.5V -5.0V -6.0V -10V
-2.5V DRAIN SOURCE VOLTAGE
DIRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.04 -7.0A RDS(ON) ON-RESISTANCE (OHM) 0.03 125o 0.02 0.01
RDS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE -13A -10V
JUNCTION TEMPERATURE
GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
REVERSE DRAIN CURRENT -5.0V -ID, DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
125o -55o 0.01
-125oC -55o GATE SOURCE VOLTAGE
0.001
0.0001 BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6679 C(W)
FDS6679
Typical Characteristics
GATE-SOURCE VOLTAGE -13A -15V CAPACITANCE (pF) -10V
6000 4000
5000
3000
2000 COSS CRSS
1000 GATE CHARGE (nC)
DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
10ms 100ms -10V SINGLE PULSE 125o 0.01 DRAIN-SOURCE VOLTAGE P(pk), PEAK TRANSIENT POWER 100µs DS(ON) LIMIT
Figure Capacitance Characteristics.
-ID, DRAIN CURRENT
SINGLE PULSE 125°C/W 25°C
0.001
0.01
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
A(t) r(t) P(pk)
SINGLE PULSE
0.05 0.02 0.01
0.01
Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient hermal response will change depending circuit board design.
FDS6679 C(W)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
OPTOPLANARPACMANPOPPowerTrench QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER SMART STARTStealth
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogicUHCUltraFET VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6679 Volt P-Channel PowerTrench® MOSFET General Descripti

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