FDS6678A N-Channel PowerTrench MOSFET General Description

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FDS6678A N-Channel PowerTrench MOSFET General Description

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FDS6678A
FDS6678A
N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers. been optimized gate charge, RDS(ON) fast switching speed.
Features
RDS(ON) RDS(ON)
Applications
DC/DC converter
High performance trench technology extremely RDS(ON) gate charge typical) High power current handling capability
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
+150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6678A Device FDS6678A Reel Size 13'' Tape width 12mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDS6678A C(W)
FDS6678A
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
Referenced 25°C VGS, Referenced 25°C =125°C
Units
Characteristics
-100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on) ID(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
mV/°C
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
1460
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°/W when mounted copper
105°/W when mounted copper
125°/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6678A C(W)
FDS6678A
Typical Characteristics
4.5V DRAIN CURRENT 3.5V 3.0V 2.5V
3.5V 4.0V 4.5V 5.0V 6.0V 2.0V 3.0V
VDS, DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.06 RDS(ON), ON-RESISTANCE (OHM)
6.8A 4.5V
0.05 0.04 0.03 0.02 0.01 JUNCTION TEMPERATURE VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation withTemperature.
DRAIN CURRENT VGS, GATE SOURCE VOLTAGE 125oC
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT 125oC 0.01 0.001 0.0001 VSD, BODY DIODE FORWARD VOLTAGE 25oC -55oC
-55oC
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6678A C(W)
FDS6678A
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE 7.5A CAPACITANCE (pF)
2400 2000 1600 1200 GATE CHARGE (nC) COSS CRSS CISS 1MHz
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
RDS(ON) LIMIT 100ms 4.5V SINGLE PULSE 0.01
Figure Capacitance Characteristics.
100µs 10ms
SINGLE PULSE 135°C/W 25°C
0.001
0.01
TIME (sec)
1000
VDS, DRAIN-SOURCE VOLTAGE
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
0.05 0.02 0.01
RJA(t) r(t) °C/W P(pk) RJA(t) Duty Cycle,
0.01
SINGLE PULSE
0.001 0.0001 0.001 0.01 TIME (sec) 1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6678A C(W)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
PACMANPOPPowerTrench QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER SMART STARTStar* PowerStealth
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogicUHCUltraFET VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6678A N-Channel PowerTrench MOSFET General Description

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