FDS6676S N-Channel PowerTrench SyncFETGeneral Description FD

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FDS6676S N-Channel PowerTrench SyncFETGeneral Description FD

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FDS6676S
FDS6676S
N-Channel PowerTrench SyncFETGeneral Description
FDS6676S designed replace single SO-8 MOSFET Schottky diode synchronous DC:DC power supplies. This MOSFET designed maximize power conversion efficiency, providing RDS(ON) gate charge. FDS6676S includes integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
14.5 RDS(ON) 5.25 RDS(ON) 6.00
Includes SyncFET Schottky body diode gate charge (43nC typical) High performance trench technology extremely RDS(ON) fast switching High power current handling capability
Applications
DC/DC converter Motor drives
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
14.5 +150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W
Package Marking Ordering Information
Device Marking FDS6676S Device FDS6676S Reel Size 13'' Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS6676S
FDS6676S
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
Units
mV/°C
Characteristics
Referenced 25°C
-100
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS,
Referenced 25°C 14.5 13.2 VGS=10 =14.5A, TJ=125°C 14.5
-3.8 5.25
mV/°C
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
4665
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
14.5
Drain-Source Diode Characteristics Maximum Ratings
Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge 14.5A, diF/dt A/µs
(Note (Note
(Note
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°/W when mounted copper
105°/W when mounted copper
125°/W when mounted minimum pad.
"SyncFET Schottky body diode characteristics" below Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6676S
FDS6676S
Typical Characteristics
4.5V
DRAIN CURRENT
3.5V
2.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.0V
2.5V
3.0V 3.5V 4.5V
VDS, DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.016 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 14.5A =10V
0.014 0.012 0.01
125oC
0.008 0.006
25oC
0.004
JUNCTION TEMPERATURE
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
DRAIN CURRENT
REVERSE DRAIN CURRENT
125oC
25oC
25oC
-55oC
0.01
-55oC
0.001 VSD, BODY DIODE FORWARD VOLTAGE
VGS, GATE SOURCE VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6676S
FDS6676S
Typical Characteristics (continued)
VGS, GATE-SOURCE VOLTAGE
6400
14.5A
CAPACITANCE (pF)
5600
CISS
4800 4000 3200 2400 1600
1MHz
COSS
CRSS
GATE CHARGE (nC) VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
100us
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
DRAIN CURRENT
RDS(ON) LIMIT
10ms 100ms
SINGLE PULSE 125°C/W 25°C
SINGLE PULSE 125oC/W 25oC
0.01 0.01
VDS, DRAIN-SOURCE VOLTAGE
0.001
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJC(t) r(t) °C/W
0.05 0.02
P(pk
0.01
0.01
RJC(t) Duty Cycle,
SINGLE PULSE
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6676S
FDS6676S
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds Schottky diode parallel with PowerTrench MOSFET. This diode exhibits similar characteristics discrete external Schottky diode parallel with MOSFET. Figure shows reverse recovery characteristic FDS6676S. Schottky barrier diodes exhibit significant leakage high temperature high reverse voltage. This will increase power device.
IDSS, REVERSE LEAKAGE CURRENT 125oC 0.01 100oC 0.001 25oC 0.0001
CURRENT 0.8A/di
0.00001 VDS, REVERSE VOLTAGE
TIME 12.5ns/div 31ns 1.8A
Figure SyncFET body diode reverse leakage versus drain-source voltage temperature.
Figure FDS6676S SyncFET body diode reverse recovery characteristic.
comparison purposes, Figure shows reverse recovery characteristics body diode equivalent size MOSFET produced without SyncFET (FDS6676).
CURRENT 0.8A/di
TIME 12.5ns/div 31ns 2.4A
Figure Non-SyncFET (FDS6676) body diode reverse recovery characteristic.
FDS6676S
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN ISOPLANAR Power247 LittleFET MicroFET QFET MicroPak MICROWIRE Optoelectronics Quiet Series MSXPro RapidConfigure RapidConnect OCXPro SILENT SMART START OPTOPLANAR
Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
Rev.

FDS6676S N-Channel PowerTrench SyncFETGeneral Description FD

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