FDS6676 N-Channel PowerTrench MOSFET General Description

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FDS6676 N-Channel PowerTrench MOSFET General Description

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FDS6676
FDS6676
N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers. been optimized gate charge, RDS(ON) fast switching speed.
Features
14.5 RDS(ON) RDS(ON) High performance trench technology extremely RDS(ON) gate charge typ) High power current handling capability
Applications
DC/DC converter
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Conti nuous Pulsed
A=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
14.5 +175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note (Note
°C/W °C/W °C/W
Package Marking Ordering Information
Device Marking FDS6676 Device FDS6676 Reel Size 13'' Tape width 12mm Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDS6676
FDS6676
Electrical Characteristics
Symbol
WDSS
25°C unless otherwise noted
Parameter
(Note
Test Conditions
Units
Drain-Source Avalanche Ratings
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
Characteristics
BVDSS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Referenced 25°C
-100
mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
Referenced 25°C 14.5 13.5 14.5 125°C 14.5
mV/°C
11.5
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
5103
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
14.5
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
FDS6676
FDS6676
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6676
FDS6676
Typical Characteristics
4.5V DRAIN CURRENT 3.0V 2.5V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.0V 3.5V 4.0V 4.5V 6.0V
DRAIN CURRENT VDS, DRAIN SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.02 RDS(ON) ON-RESISTANCE (OHM)
RDS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 14.5A
7.25 0.015
0.01
0.005
JUNCTION TEMPERATURE
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
5.0V DRAIN CURRENT REVERSE DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
0.01 0.001 0.0001
VGS, GATE SOURCE VOLTAGE
BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6676
FDS6676
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE 14.5A
CAPACITANCE (pF) 7000
5.0V
6000 CISS 5000 4000 3000 2000 COSS 1000 CRSS
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
100µs DRAIN CURRENT RDS(ON) LIMIT 10ms 100ms SINGLE PULSE 0.01 VDS, DRAIN-SOURCE VOLTAGE
Figure Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER SINGLE PULSE 125°C/W 25°C
0.001
0.01
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
r(t) P(pk)
SINGLE PULSE
0.05 0.02 0.01
0.01
Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6676
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
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DISCLAIMER
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LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
Rev.

FDS6676 N-Channel PowerTrench MOSFET General Description

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