FDS6675A P-Channel PowerTrench MOSFET General Description
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FDS6675A
FDS6675A
P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET rugged gate version Fairchild Semiconductor's advanced PowerTrench process. been optimized power management applications requiring wide range gate drive voltage ratings (4.5V 25V).
Features
RDS(ON) RDS(ON) -4.5
gate charge Fast switching speed High performance trench technology extremely RDS(ON) High power current handling capability
Applications
Power management Load switch Battery protection
SO-8
SO-8
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
(Note
Units
+175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note (Note
°C/W °C/W °C/W
Package Marking Ordering Information
Device Marking FDS6675A
2003 Fairchild Semiconductor Corporation
Device FDS6675A
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS6675A
FDS6675A
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS VGS(th) VGS(th) RDS(on)
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
-250 -250 Referenced 25°C VGS, -250 -250 Referenced 25°C -4.5 VGS= TJ=125°C
Units
Characteristics
±100 -1.6 2330 mV/°C mV/°C
Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
ID(on) Ciss Coss Crss td(on) td(off)
Dynamic Characteristics
VGS=15
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -2.1 Diode Reverse Recovery Time -11A diF/dt 100A/µs Diode Reverse Recovery Charge
(Note
-0.7
-2.1 -1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6675A
FDS6675A
Typical Characteristics
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-10V -6.0V -ID, DRAIN CURRENT
-4.5V -4.0V -3.5V
3.5V
-3.0V
-4.0V
-4.5V
-6.0V -10V
-VDS, DRAIN SOURCE VOLTAGE
-ID, DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.05 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE JUNCTION TEMPERATURE (oC)
-11A
-5.5A
0.04
0.03
125oC
0.02
25oC
0.01
-VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
-10V
-ID, DRAIN CURRENT
-IS, REVERSE DRAIN CURRENT
-55oC
25oC
125oC 0.01 0.001 0.0001 25oC -55oC
125oC
-VGS, GATE SOURCE VOLTAGE
-VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6675A
FDS6675A
Typical Characteristics
-VGS, GATE-SOURCE VOLTAGE -11A
CAPACITANCE (pF)
3500
-10V -15V -20V
3000
Ciss
2500 2000 1500
Coss
1000
Crss GATE CHARGE (nC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
RDS(ON) LIMIT 100µ -ID, DRAIN CURRENT 10ms 100ms -10V SINGLE PULSE 125oC/W 25oC 0.01 -VDS, DRAIN-SOURCE VOLTAGE
SINGLE PULSE 125°C/W 25°C
0.001
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t)
125oC/W P(pk) RJA(t) Duty Cycle,
0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6675A
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
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LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
Rev.
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