FDS6670S N-Channel PowerTrench® SyncFET General Description

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FDS6670S N-Channel PowerTrench® SyncFET General Description

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FDS6670S
FDS6670S
N-Channel PowerTrench® SyncFET
General Description
FDS6670S designed replace single SO-8 MOSFET Schottky diode synchronous DC:DC power supplies. This MOSFET designed maximize power conversion efficiency, providing RDS(ON) gate charge. FDS6670S includes integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
13.5 RDS(ON) RDS(ON) 12.5 Includes SyncFET Schottky body diode gate charge (24nC typical) High performance trench technology extremely RDS(ON) fast switching High power current handling capability
Applications
DC/DC converter Motor drives
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
unless otherwise noted
Parameter
Ratings
(Note
Units
13.5 +150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6670S Device FDS6670S Reel Size 13'' Tape width 12mm Quantity 2500 units
©2001 Fairchild Semiconductor Corporation
FDS6670S
FDS6670S
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
Referenced 25°C
Units
Characteristics
-100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS, Referenced 25°C 13.5 11.2 VGS=10 =13.5A, TJ=100°C 13.5
-6.2
mV/°C
12.5 12.5
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
2674
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
13.5
Drain-Source Diode Characteristics Maximum Ratings
Notes: junction-to-case case -to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design. 50°C/W when mounted copper 105°C/W when mounted copper 125°C/W when mounted minimum pad.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge 13.5A, diF/dt A/µs
(Note (Note
26.8 47.2
(Note
FDS6670S
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% "SyncFET Schottky body diode characteristics" below.
FDS6670S
FDS6670S
Typical Characteristics
DRAIN CURRENT
6.0V
DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.5V 4.0V 3.5V
3.5V
4.0V
4.5V 6.0V
3.0V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.025 RDS(ON) ON-RESISTANCE (OHM)
DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
13.5A
6.8A
0.02
0.015
0.01
0.005 GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE
Figure On-Resistance Variation with Temperature.
DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
GATE SOURCE VOLTAGE
0.01
0.001 VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6670S
FDS6670S
Typical Characteristics
(continued)
VGS, GATE-SOURCE VOLTAGE =13.5A CAPACITANCE (pF)
3600 3000 2400 1800 1200 CRSS
1MHz
GATE CHARGE (nC)
DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
DRAIN CURRENT
RDS(ON) LIMIT
100µs 10ms 100ms
SINGLE PULSE 125°C/W 25°C
SINGLE PULSE 0.01 0.01
0.001
0.01
TIME (sec)
1000
VDS, DRAIN-SOURCE VOLTAGE
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.05 0.02 0.01
RJA(t) r(t) °C/W P(pk)
SINGLE PULSE
0.01
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6670S
FDS6670S
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds Schottky diode parallel with PowerTrench MOSFET. This diode exhibits similar characteristics discrete external Schottky diode parallel with MOSFET. Figure shows reverse recovery characteristic FDS6670S. Schottky barrier diodes exhibit significant leakage high temperature high reverse voltage. This will increase power device.
IDSS, REVERSE LEAKAGE CURRENT
0.01
0.001
Current: 0.8A/div
0.0001
0.00001 VDS, REVERSE VOLTAGE
Time: 10.0ns/div
Figure SyncFET body diode reverse leakage versus drain-source voltage temperature.
Figure FDS6670S SyncFET body diode reverse recovery characteristic.
comparison purposes, Figure shows reverse recovery characteristics body diode equivalent size MOSFET produced without SyncFET (FDS6670A).
Current: 0.8A/div
Time: 10.0ns/div
Figure Non-SyncFET (FDS6670A) body diode reverse recovery characteristic.
FDS6670S
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6670S N-Channel PowerTrench® SyncFET General Description

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