FDS6630A N-Channel Logic Level PowerTrenchMOSFET General Des

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FDS6630A N-Channel Logic Level PowerTrenchMOSFET General Des

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FDS6630A
FDS6630A
N-Channel Logic Level PowerTrenchMOSFET
General Description
This N-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance maintain superior switching performance. These devices well suited voltage battery powered applications where in-line power loss fast switching required.
Features
RDS(on) 0.038 RDS(on) 0.053
gate charge (5nC typical). Fast switching speed. High performance trench technology extremely RDS(ON). High power current handling capability.
Applications
DC/DC converter Load switch Motor drives
SO-8
25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
(Note
Units
+150
Power Dissipation Single Operation
(Note (Note (Note
Tstg
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Outlines Ordering Information
Device Marking
FDS6630A
Device
FDS6630A
Reel Size
13''
Tape Width
12mm
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDS6630A Rev.
FDS6630A
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Referenced 25°C
Units
Characteristics
BVDSS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note
-100
mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS, Referenced 25°C TJ=125°C
0.028 0.044 0.040
mV/°C
0.038 0.060 0.053
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
Notes: junction-to-case case-to-ambient resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
when mounted copper.
105° when mounted 0.04 copper.
125° 0.006 copper.
Scale letter size paper Pulse Test: Pulse Width Duty Cycle 2.0%
FDS6630A Rev.
FDS6630A
Typical Characteristics
DRAIN-SOURCE CURRENT
=10V
DRAIN-SO URCE ON-RESISTANCE
6.0V 5.0V 4.5V 4.0V
(ON) NORMALIZ
VGS= 3.5V 4.0V 4.5V 5.0V 6.0V 7.0V
3.5V
3.0V 2.5V
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.12
DS(ON) ON-RESISTANCE (OHM)
DS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
0.08 0.06 0.04 0.02
125°C
25°C
JUNCTION TEMPERATURE (°C)
GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
REVERSE DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
DRAIN CURRENT
-55°C 25°C 125°C
125°C 25°C -55°C
0.01
0.001
GATE SOURCE VOLTAGE
0.0001
BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6630A Rev.
FDS6630A
Typical Characteristics
ATE-SOURCE VOLTAG
(continued)
1000
6.5A
CAPACITANCE (pF)
Coss
GATE CHARGE (nC)
DRAIN SOURCE VOLTAGE
Figure Gate-Charge Characteristics.
Figure Capacitance Characteristics.
DRAIN CURRENT
POWER
SINGLE PULSE
SINGL A=125 °C/W 25°C
0.01
DRAIN-SO URCE VOLTAGE
0.001
0.01
1000
SINGLE PULSE TIME (SEC)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
ANSI RESISTANC
r(t), NORM IZED EFFECTIVE
r(t) 125°C
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient themal response will change depending circuit board design.
FDS6630A Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST® FASTrGTOHiSeCDISCLAIMER
QFETQSQuiet SeriesSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTinyLogicUHCVCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6630A N-Channel Logic Level PowerTrenchMOSFET General Des

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