FDS6614A N-Channel Logic Level PowerTrench® MOSFET General D

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FDS6614A N-Channel Logic Level PowerTrench® MOSFET General D

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FDS6614A
FDS6614A
N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance maintain superior switching performance. These devices well suited voltage battery powered applications where in-line power loss fast switching required.
Features
RDS(on) 0.018 RDS(on) 0.025 gate charge (12nC typical). Fast switching speed. High performance trench technology extremely RDS(on). High power current handling capability.
Applications
DC/DC converter Load switch Motor drives
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25 unless otherwise noted
Parameter
Ratings
(Note
Units
+150
Power Dissipation Single Operation
(Note (Note (Note
Tstg
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6614A
Fairchild Semiconductor Corporation
Device FDS6614A
Reel Size 13''
Tape width 12mm
Quantity
2500 units
FDS6614A Rev.
FDS6614A
DMOS Electrical Characteristics
Symbol Characteristics
BVDSS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note
25°C unless otherwise noted
Parameter
Test Conditions
Referenced 25°C
Units
mV/°C -100
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VGS, Referenced 25°C 125°C
0.015 0.022 0.019
mV/°C
0.018 0.030 0.025
ID(on)
On-State Drain Current Forward Transconductance
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
1160
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
0.75
Notes: RqJA junction-to-case case-to-ambient resistance where case thermal reference defined solder mounting surface drain pins. RqJC guaranteed design while RqJA determined user's board design.
when mounted copper.
105° when mounted 0.04 copper.
125° when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width Duty Cycle 2.0%
FDS6614A Rev.
FDS6614A
Typical Characteristics
DRAIN-SOURCE CURRENT 6.0V 4.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE DRAIN CURRENT 3.5V 4.0V 4.5V 5.0V 7.0V 3.0V
4.0V 3.5V
3.0V
2.5V VDS, DRAIN-SOURCE VOLTAGE
Figure On-Region Characteristics
Figure On-Resistance Variation with Drain Current Gate Voltage
0.06 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE JUNCTION TEMPERATURE (oC)
9.3A
0.05
0.04
0.03
0.02
0.01
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature
Figure On-Resistance Variation with Gate-to-Source Voltage
DRAIN CURRENT 125oC
REVERSE DRAIN CURRENT
-55oC
125oC 0.01 0.001 0.0001 VSD, BODY DIODE FORWARD VOLTAGE
VGS, GATE SOURCE VOLTAGE
Figure Transfer Characteristics
Figure Body Diode Forward Voltage Variation with Source Current Temperature
FDS6614A Rev.
FDS6614A
Typical Characteristics
(continued)
VGS, GATE-SOURCE VOLTAGE 9.3A CAPACITANCE (pF)
1600 1400 1200 1000 COSS CRSS CISS
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate-Charge Characteristics
Figure Capacitance Characteristics
RDS(ON) LIMIT 100µs DRAIN CURRENT 100ms SINGLE PULSE 0.01 VDS, DRAIN-SOURCE VOLTAGE
10ms
SINGLE PULSE 125oC/W
POWER
0.001
0.01
1000
SINGLE PULSE TIME (SEC)
Figure Maximum Safe Operating Area
Figure Single Pulse Maximum Power Dissipation
ANSI RESISTANC
r(t), NORM IZED EFFECTIVE
r(t) 125°C
P(pk
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient themal response will change depending circuit board design.
FDS6614A Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST® FASTrGTOHiSeCDISCLAIMER
QFETQSQuiet SeriesSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTinyLogicUHCVCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6614A N-Channel Logic Level PowerTrench® MOSFET General D

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