FDS6612A Single N-Channel, Logic-Level, PowerTrench® MOSFET
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FDS6612A
FDS6612A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance maintain superior switching performance. These devices well suited voltage battery powered applications where in-line power loss fast switching required.
Features
RDS(ON) RDS(ON)
Fast switching speed gate charge High performance trench technology extremely RDS(ON) High power current handling capability
SO-8
SO-8
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
(Note
Units
+150
Power Dissipation Single Operation
(Note (Note
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note (Note
°C/W
Package Marking Ordering Information
Device Marking FDS6612A Device FDS6612A Reel Size 13'' Tape width 12mm Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDS6612A
FDS6612A
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
Units
mV/°C
Characteristics
Referenced 25°C
±100
TJ=55°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS, Referenced 25°C VGS= TJ=125°C
-4.4
mV/°C
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward (Note Voltage Diode Reverse Recovery Time diF/dt A/µs Diode Reverse Recovery Charge 0.77
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted 1in2 copper
125°C/W when mounted minimum pad.
Scale letter size paper
Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6612A
FDS6612A
Typical Characteristics
4.5V
3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.0V
DRAIN CURRENT
6.0V
4.0V 4.5V 5.0V 6.0V
3.5V
3.0V VDS, DRAIN SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8.4A
4.2A 0.08
0.06 125oC 0.04 25oC 0.02
JUNCTION TEMPERATURE (oC)
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
DRAIN CURRENT
125oC
25oC
0.01
0.001
25oC
VGS, GATE SOURCE VOLTAGE
0.0001 VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6612A
FDS6612A
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE 8.4A CAPACITANCE (pF)
Ciss
Coss
Crss
GATE CHARGE (nC) VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
100µs RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
DRAIN CURRENT
10ms 100ms
SINGLE PULSE 25oC
SINGLE PULSE 125oC/W
0.01 0.01
VDS, DRAIN-SOURCE VOLTAGE
0.001
0.01
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t) P(pk)
SINGLE PULSE
0.05 0.02 0.01
0.01
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6612A
FDS6612A
PSPICE Electrical Model N-Channel
.SUBCKT FDS6612A *NOM TEMP=25 *REV JULY 2003 1E-9 4.0E-10 5.1E-10 DBODY DBODYMOD DBREAK DBREAKMOD DPLCAP DPLCAPMOD EBREAK 34.2 EVTHRES EVTEMP LGATE 3.84E-9 LDRAIN 1.00E-9 LSOURCE 4E-9 RLGATE 38.4 RLDRAIN RLSOURCE MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD RBREAK RBREAKMOD RDRAIN RDRAINMOD 8E-3 RGATE RSLC1 RSLCMOD 1E-6 RSLC2 RSOURCE RSOURCEMOD 7.5E-3 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD VBAT ESLC .MODEL DBODYMOD (IS=7E-15 RS=6.1E-3 N=0.84 TRS1=1.7E-3 TRS2=1.0E-6 CJO=3.2E-10 TT=10E-9 M=0.5 IKF=0.3 XTI=3.0) .MODEL DBREAKMOD (RS=1E-1 TRS1=1.12E-3 TRS2=1.25E-6) .MODEL DPLCAPMOD (CJO=14E-11 IS=1E-30 N=10 M=0.34) .MODEL MWEAKMOD NMOS (VTO=1.82 KP=0.05 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=42 RS=.1) .MODEL MMEDMOD NMOS (VTO=2.1 KP=6 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=4.2) .MODEL MSTROMOD NMOS (VTO=2.55 KP=50 IS=1E-30 N=10 TOX=1 L=1U W=1U) .MODEL RBREAKMOD (TC1=0.83E-3 TC2=1E-7) .MODEL RDRAINMOD (TC1=6E-3 TC2=5E-6) .MODEL RSLCMOD (TC1=2.5E-3 TC2=4.5E-6) .MODEL RSOURCEMOD (TC1=1.0E-3 TC2=1E-6) .MODEL RVTHRESMOD (TC1=-2.013E-3 TC2=-7E-6) .MODEL RVTEMPMOD (TC1=-1.5E-3 TC2=1E-6) .MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-4 VOFF=-3) .MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3 VOFF=-4) .MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.3 VOFF=-0.5) .MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-0.5 VOFF=-1.3) .ENDS Note: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written William Hepp Frank Wheatley.
FDS6612A
LDRAIN DPLCAP RSLC1 RSLC2 LGATE GATE RLGATE EVTEMP RGATE EVTHRES MSTRO LSOURCE RSOURCE RLSOURCE RVTHRES RBREAK RVTEMP VBAT SOURC RDRAIN MWEAK MMED EBREAK ESLC RLDRAIN DBREAK DRAIN
BODY
FDS6612A
SPICE Thermal Model
.SUBCKT FDS6612A_THERM *THERMAL MODEL SUBCIRCUIT *REV JULY 2003 *MIN
RTHERM1 JUNCTION
CTHERM1
CTHERM1 CTHERM2 CTHERM3 CTHERM4 CTHERM5 CTHERM6 CTHERM7 CTHERM8 RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6 RTHERM7 RTHERM8 .ENDS
0.005 0.05 0.10 0.35 0.45 0.50 0.55 3.00 5.000 6.250 7.500 8.750 10.625 11.875 31.250 43.750
RTHERM2 RTHERM3 RTHERM4
CTHERM2
CTHERM3
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
RTHERM7 RTHERM8
CTHERM7
CTHERM8
AMBIENT
FDS6612A
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
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Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
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