April 2000 PRELIMINARY FDS6609A P-Channel Logic Level PowerT
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FDS6609A
April 2000 PRELIMINARY
FDS6609A
P-Channel Logic Level PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance maintain superior switching performance. These devices well suited voltage battery powered applications where in-line power loss fast switching required.
Features
-6.3 RDS(ON) 0.032 RDS(ON) 0.05 -4.5
gate charge Fast switching speed High performance trench technology extremely RDS(ON) High power current handling capability
Applications
DC/DC converter Load switch Motor Drive
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
-6.3 +150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6609A Device FDS6609A Reel Size 13'' Tape width 12mm Quantity 2500 units
2000 Fairchild Semiconductor Corporation
FDS6609A
FDS6609A
Electrical Characteristics
Symbol
BVDSS BVDSS ===TJ IDSS IGSSF IGSSR VGS(th) VGS(th) ===TJ RDS(on)
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
-250 -250 Referenced 25°C
Units
Characteristics
-100 -1.5 0.027 0.04 0.04 14.5 -7.2 -2.1
(Note
mV/°C mV/°C 0.032 0.05 0.54
Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
VGS, -250 -250 Referenced 25°C -7.0 -5.5 -4.5 -7.0A, TJ=125°C -7.0
ID(on) Ciss Coss Crss td(on) td(off)
Dynamic Characteristics
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage -0.76 -1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°/W when mounted copper
105°/W when mounted copper
125°/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6609A)
FDS6609A
Typical Characteristics
-10.0V
-5.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -6.0V -3.5V -4.0V -4.5V -ID, DIRAIN CURRENT -5.0V -6.0V -7.0V -8.0V -9.0V -10.0V -4.5V -4.0V
-ID, DRAIN CURRENT
-3.5V
-3.0V
-VDS, DRAIN SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.15 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -10V
-3.6A
0.12
0.09
0.06
0.03
-VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE
Figure On-Resistance Variation with Temperature.
-ID, DRAIN CURRENT -VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Gate-to-Source Voltage.
-IS, REVERSE DRAIN CURRENT
0.01
0.001 -VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6609A)
FDS6609A
Typical Characteristics
-7.2A -15V -10V
1500 CISS
1200
COSS CRSS
GATE CHARGE (nC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
RDS(ON) LIMIT 100µs 10ms 100ms -10V SINGLE PULSE 0.01 -VDS, DRAIN-SOURCE VOLTAGE
Figure Capacitance Characteristics.
SINGLE PULSE 125°C/W 25°C
0.001
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t)
0.05 0.02 0.01 SINGLE PULSE
P(pk) RJA(t) Duty Cycle,
0.01
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6609A)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST®
DISCLAIMER
QFETQSQT OptoelectronicsQuiet SeriesSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogicUHC
VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
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