FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General

Datasheet Thumbnail

Top Searches for this datasheet

FDS6576
FDS6576
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET rugged gate version Fairchild Semiconductor's advanced PowerTrench process. been optimized power management applications with wide range gate drive voltage (2.5V 12V).
Features
RDS(ON) 0.014 -4.5 RDS(ON) 0.020 -2.5
Extended VGSS range (±12V) battery applications. gate charge (43nC typical). Fast switching speed. High performance trench technology extremely
RDS(ON).
Applications Load switch Battery protection Power management
High power current handling capability.
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
+150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note (Note
°C/W °C/W °C/W
Package Marking Ordering Information
Device Marking FDS6576 Device FDS6576 Reel Size 13'' Tape width 12mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDS6576 E(W)
FDS6576
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
-250 -250 Referenced 25°C VGS, -250 -250 Referenced 25°C -4.5 -8.8 -2.5 -4.5 =125°C -4.5 -4.5
Units
Characteristics
-100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
-0.6
-0.83 11.5 11.1
-1.5
mV/°C
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
4044
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN -4.5
-4.5
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage -2.1
(Note
-0.66
-1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6576 E1(W)
FDS6576
Typical Characteristics
6.0V DRAIN CURRENT 4.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.25 1.75 3.5V 1.25 0.75 DRAIN CURRENT 4.5V 6.0V 3.0V
2.5V
VDS, DRAIN-SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.03 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
0.025
0.02 125oC 0.015
0.01 25oC 0.005 VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE
Figure On-Resistance Variation with Temperature.
DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
-55oC
25oC 125oC
125oC 0.01 0.001 0.0001 25oC -55oC
VGS, GATE SOURCE VOLTAGE
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6576 E1(W)
FDS6576
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE CAPACITANCE (pF)
3000 2500 CISS 2000 1500 1000 CRSS GATE CHARGE (nC) VDS, DRAIN SOURCE VOLTAGE COSS 1MHz
Figure Gate Charge Characteristics.
100µs RDS(ON) LIMIT DRAIN CURRENT 10ms 100ms SINGLE PULSE 125oC/W 25oC 0.01 0.01
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
SINGLE PULSE 125°C/W 25°C
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.05
RJA(t) r(t) °C/W P(pk)
0.02 0.01
SINGLE PULSE
0.01
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6576 E1(W)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST
DISCLAIMER
PowerTrench QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER SMART STARTSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTinyLogicUHCVCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General

Top Searches for this datasheet

Other recent searches