FDS6575 P-Channel 2.5V Specified PowerTrench® MOSFET General

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FDS6575 P-Channel 2.5V Specified PowerTrench® MOSFET General

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FDS6575
FDS6575
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This -Channel 2.5V specified MOSFET rugged gate version Fairchild Semiconductor's advanced PowerTrench process. been optimized power management applications wide range gate drive voltage (2.5V 8V).
Features
RDS(ON) -4.5 RDS(ON) -2.5 gate charge High performance trench technology extremely RDS(ON) High current power handling capability
Applications
Power management Load switch Battery protection
SO-8
SO-8
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
(Note
Units
+175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note (Note
°C/W °C/W °C/W
Package Marking Ordering Information
Device Marking FDS6575 Device FDS6575 Reel Size 13'' Tape width 12mm Quantity 2500 units
©2001 Fairchild Semiconductor Corporation
FDS6575 F(W)
FDS6575
Electrical Characteristics
Symbol
IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
-250 -250 Referenced 25°C
Units
Characteristics
-100 mV/°C
Characteristics
GS(th) GS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
-250 -250 Referenced 25°C -4.5 -2.5 -4.5 =-10A, =125°C -4.5
-0.4
-0.6
-1.5
mV/°C
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
4951
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
-10V, -4.5
RGEN
-4.5
Drain-Source Diode Characteristics Maximum Ratings
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage
-2.1
(Note
-0.6
-1.2
°C/W when mounted 1in2 copper
°C/W when mounted copper
°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6575 F(W)
FDS6575
Typical Characteristics
-4.5V -3.0V -ID, DRAIN CURRENT -2.0V -1.5V -2.5V RDS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.5V -2.0V -2.5V -3.0V -3.5V -4.5V
DRAIN SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.035 RDS(ON) ON-RESISTANCE (OHM) 0.03
RDS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-10A 4.5V
0.025 0.02 125o 0.015
0.01 0.005
JUNCTION TEMPERATURE (oC)
GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
REVERSE DRAIN CURRENT -ID, DRAIN CURRENT -55oC 125oC
Figure On-Resistance Variation with Gate-to-Source Voltage.
125o 0.01 -55o 0.001
GATE SOURCE VOLTAGE
0.0001 BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6575 F(W)
FDS6575
Typical Characteristics
GATE-SOURCE VOLTAGE -10A -15V CAPACITANCE (pF) -10V
6000 CISS 5000
4000
3000
2000
1000 GATE CHARGE (nC) CRSS DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
10ms 100ms -4.5V SINGLE PULSE 125o 0.01 0.01 P(pk), PEAK TRANSIENT POWER 100µ RDS(ON) LIMIT
Figure Capacitance Characteristics.
-ID, DRAIN CURRENT
SINGLE PULSE 125°C/W 25°C
0.001
0.01
DRAIN-SOURCE VOLTAGE
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t) P(pk)
SINGLE PULSE
0.05 0.02 0.01
0.01
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6575 F(W)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

FDS6575 P-Channel 2.5V Specified PowerTrench® MOSFET General

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