June 2001 PRELIMINARY FDS6574A N-Channel PowerTrench MOSFET

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June 2001 PRELIMINARY FDS6574A N-Channel PowerTrench MOSFET

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FDS6574A
June 2001 PRELIMINARY
FDS6574A
N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers. been optimized gate charge, RDS(ON) fast switching speed.
Features
RDS(ON) RDS(ON) RDS(ON)
gate charge High performance trench technology extremely RDS(ON) High power current handling capability
Applications
DC/DC converter
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
+175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6574A Device FDS6574A Reel Size 13'' Tape width 12mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDS6574A
FDS6574A
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
Units
Characteristics
Referenced 25°C -100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VGS,
-2.7
mV/°C
Referenced 25°C 12.5 A,TJ=125°C
ID(on)
On-State Drain Current Forward Transconductance
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
10V,
7657 1432
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
19.5
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note
0.56
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6574A B(W)
FDS6574A
Typical Characteristics
4.5V 3.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.5V 1.8V 1.5V
DRAIN CURRENT
1.5V
1.8V
2.5V 3.0V 3.5V 4.5V
VDS, DRAIN SOURCE VOLTAGE
DIRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.012 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.5V
0.01
0.008
125oC
0.006
0.004
25oC
0.002
JUNCTION TEMPERATURE
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
DRAIN CURRENT
-55oC 125oC
25oC
125oC 0.01 0.001 0.0001 25oC -55oC
VGS, GATE SOURCE VOLTAGE
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6574A B(W)
FDS6574A
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE
10000 8000 CAPACITANCE (pF) CISS
6000
4000 COSS 2000 CRSS
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
DRAIN CURRENT
RDS(ON) LIMIT
100µs 10ms 100ms
SINGLE PULSE 125°C/W 25°C
4.5V SINGLE PULSE 125oC/W 25oC 0.01 0.01
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t) P(pk)
SINGLE PULSE
0.05 0.02 0.01
0.01
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6574A B(W)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

June 2001 PRELIMINARY FDS6574A N-Channel PowerTrench MOSFET

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