FDS4070N7 N-Channel PowerTrench MOSFET General Description
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FDS4070N7
FDS4070N7
N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers. been optimized "low side" synchronous rectifier operation, providing extremely RDS(ON) small package.
Features
15.3 RDS(ON) High performance trench technology extremely RDS(ON) High power current handling capability Fast switching, gate charge FLMP SO-8 package: Enhanced thermal performance industry-standard package size
Applications
Synchronous rectifier DC/DC converter
Bottom-side Drain Contact
Absolute Maximum Ratings
Symbol
VDSS VGSS TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
15.3 +150
(Note
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W
Package Marking Ordering Information
Device Marking FDS4070N7 Device FDS4070N7 Reel Size 13'' Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS4070N7
FDS4070N7
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSSF IGSSR VGS(th) VGS(th) RDS(on) ID(on) Ciss Coss Crss td(on) td(off)
25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD=40V, ID=15.3A
15.3
Units
Drain-Source Avalanche Ratings (Note
Characteristics
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Referenced 25°C
-100
mV/°C
VGS, Referenced 15.3 ID=15.3A, =125°C 15.3
Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
mV/°C
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note RGEN 15.3 2819
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
FDS4070N7
FDS4070N7
Electrical Characteristics
Symbol
25°C unless otherwise noted
Parameter
Test Conditions
Units
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time 15.3 diF/dt A/µs Diode Reverse Recovery Charge
(Note
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
40°C/W when mounted 1in2 copper
85°C/W when mounted minimum copper
Scale letter size pape Pulse Test: Pulse Width 300µs, Duty Cycle
FDS4070N7
FDS4070N7
Typical Characteristics
DRAIN CURRENT RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
7.0V
6.0V
5.5V
5.0V
5.0V
5.5V 6.0V 7.0V
4.5V
0.25 0.75 1.25 VDS, DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.015 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
15.3A
7.7A
0.013 0.011
125oC
0.009 0.007
25oC
0.005 0.003 VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE
Figure On-Resistance Variation withTemperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT 125oC 25oC 0.01 0.001 0.0001 -55oC
DRAIN CURRENT
=125oC
25oC -55oC
VGS, GATE SOURCE VOLTAGE
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS4070N7
FDS4070N7
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE
4000
15.3
CAPACITANCE (pF)
3000
CISS
1MHz
2000 COSS 1000
CRSS
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
DRAIN CURRENT
RDS(ON) LIMIT 10ms 100ms
100µs
SINGLE PULSE 85°C/W 25°C
SINGLE PULSE 85oC/W 25oC 0.01 0.01
0.01
1000
VDS, DRAIN-SOURCE VOLTAGE
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t) °C/W P(pk) RJA(t) Duty Cycle,
0.05 0.02
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS4070N7
FDS4070N7
Dimensional Outline Layout
FDS4070N7
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
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LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
Rev.
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