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FDS4070N3

FDS4070N3

FDS4070N3
May 2003
FDS4070N3
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC / DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
Applications
· Synchronous rectifier · DC / DC converter
Bottom-side Drain Contact
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
Parameter
Ratings
(Note 1a)
Units
15.3 60 3.0 -55 to +150
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
2002 Fairchild Semiconductor Corporation
FDS4070N3 Rev B1 (W)
FDS4070N3
Electrical Characteristics
Symbol
EAS IAS BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Min Typ
Units
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
Dynamic Characteristics
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
FDS4070N3 Rev B1 (W)
FDS4070N3
Electrical Characteristics
Symbol
IS VSD trr Qrr
Parameter
Test Conditions
Min Typ
Units
Drain-Source Diode Characteristics and Maximum Ratings
(Note 2)
40°C / W when mounted on a 1in2 pad of 2 oz copper
85°C / W when mounted on a minimum pad of 2 oz copper
FDS4070N3 Rev B1 (W)
FDS4070N3
Typical Characteristics
60 50 ID, DRAIN CURRENT (A) 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
5.5V 6.0V 7.0V 10V
10 0 0 0.25 0.5 0.75 1 1.25 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.015 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
0.005 0.003 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation withTemperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
50 ID, DRAIN CURRENT (A) 40 30
25oC -55oC
0 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS4070N3 Rev B1 (W)
FDS4070N3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
CAPACITANCE (pF)
2000 COSS 1000
0 0 10 20 30 40 50 Qg, GATE CHARGE (nC)
0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
100 RDS(ON) LIMIT 10 10s DC 1ms 10ms 100ms 1s
100µs
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
SINGLE PULSE
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS4070N3 Rev B1 (W)
FDS4070N3
Dimensional Outline and Pad Layout
FDS4070N3 Rev B1 (W)
TRADEMARKS
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2