Fast Switching Diode Silicon Epitaxial Planar Diode Electrical da

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LS4150
Fast Switching Diode
Silicon Epitaxial Planar Diode Electrical data identical with device 1N4150 Quadro Melf package
Applications
High speed switch general purpose computer industrial applications
12009
Order Instruction
Type LS4150 Type Differentiation VRRM Ordering Code LS4150-GS08 Remarks Tape Reel
Absolute Maximum Ratings
25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions Type Symbol VRRM IFSM IFAV Tstg Value -65.+175 Unit
tp=1ms VR=0
Maximum Thermal Resistance
25_C Parameter Junction ambient Test Conditions board mmx50 mmx1.6 Symbol RthJA Value Unit
Document Number 85562 Rev. 15-Feb-01
www.vishay.com
LS4150
Vishay Telefunken Electrical Characteristics
25_C Parameter Test Conditions IF=1mA IF=10mA Forward voltage IF=50mA IF=100mA IF=200mA VR=50 Reverse current VR=50 Tj=150 Diode capacitance VR=0, f=1MHz, VHF=50mV Reverse recovery time IF=IR=10.100mA, iR=0.1xI RL=100W Type Symbol 0.54 0.66 0.76 0.82 0.87 0.62 0.74 0.86 0.92 Unit
Characteristics 25_C unless otherwise specified)
Reverse Current Scattering Limit Forward Current 1000
Scattering Limit
VR=50V
Tj=25°C
0.01
9100
9162
Junction Temperature
Forward Voltage
Figure Reverse Current Junction Temperature
Figure Forward Current Forward Voltage
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Document Number 85562 Rev. 15-Feb-01
LS4150
Vishay Telefunken Dimensions
12071
Document Number 85562 Rev. 15-Feb-01
www.vishay.com
LS4150
Vishay Telefunken Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: (0)7131 2831, number: (0)7131 2423
www.vishay.com
Document Number 85562 Rev. 15-Feb-01

Fast Switching Diode Silicon Epitaxial Planar Diode Electrical da

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