Fast Switching Diode Silicon Epitaxial Planar Diodes Electrical d

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Fast Switching Diode Silicon Epitaxial Planar Diodes Electrical d

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LS4148.LS4448
Fast Switching Diode
Silicon Epitaxial Planar Diodes Electrical data identical with devices 1N4148 1N4448 respectively Quadro Melf package
Applications
Extreme fast switches
12009
Order Instruction
Type LS4148 LS4448 Type Differentiation VRRM= VF@IF 50mA VRRM= VF@IF 100mA Ordering Code LS4148-GS08 LS4448-GS08 Remarks Tape Reel Tape Reel
Absolute Maximum Ratings
25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions Type Symbol VRRM IFSM IFRM IFAV Tstg Value -65.+175 Unit
tp=1µs
VR=0
Maximum Thermal Resistance
25°C Parameter Junction ambient Test Conditions board Symbol RthJA Value Unit
Document Number 85561 Rev. 27-Nov-01
www.vishay.com
LS4148.LS4448
Vishay Semiconductors Electrical Characteristics
25°C Test Conditions IF=5 IF=50 IF=100 Reverse current VR=20 VR=20 Tj=150°C VR=75 Breakdown voltage IR=100 tp/T=0.01, tp=0.3 Diode capacitance VR=0, MHz, VHF=50 Rectification efficiency VHF=2V, f=100 Reverse recovery time IF=IR=10 iR=1 IF=10 VR=6 iR=0.1 RL=100 Parameter Forward voltage Type Symbol Min. LS4448 0.62 LS4148 LS4448 V(BR) Typ. 0.86 0.93 Max. 0.72 Unit
Characteristics 25_C, unless otherwise specified)
1000 Forward Current Forward Current 4148 Scattering Limit 1000 4448 Scattering Limit
Tj=25°C
Tj=25°C
16640
16642
Forward Voltage
Forward Voltage
Figure Forward Current Forward Voltage
Figure Forward Current Forward Voltage
www.vishay.com
Document Number 85561 Rev. 27-Nov-01
LS4148.LS4448
1000 Diode Capacitance Reverse Current
9098
Tj=25°C
f=1MHz Tj=25°C
Scattering Limit
Reverse Voltage
9099
Reverse Voltage
Figure Reverse Current Reverse Voltage
Figure Diode Capacitance Reverse Voltage
Dimensions
12071
Document Number 85561 Rev. 27-Nov-01
www.vishay.com
LS4148.LS4448
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Telefunken products unintended unauthorized application, buyer shall indemnify Vishay Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: (0)7131 2831, number: (0)7131 2423
www.vishay.com
Document Number 85561 Rev. 27-Nov-01

Fast Switching Diode Silicon Epitaxial Planar Diodes Electrical d

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