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NSF2250WT1 silicon epitaxial bipolar transistor intended general purpo
Top Searches for this datasheetNSF2250WT1 Silicon Oscillator Mixer Transistor NSF2250WT1 silicon epitaxial bipolar transistor intended general purpose oscillator mixer applications. suitable automovtive keyless entry tuner designs. device features stable oscillation small frequency drift during changes supply voltage over ambient temperature range. COLLECTOR BASE High Gain Bandwidth Product: 2000 Minimum Tightly Controlled Range: Feedback Capacitance: 0.45 Typical MAXIMUM RATINGS Parameters Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Electrostatic Discharge Symbol VCBO VCEO VEBO Units Ratings EMITTER MARKING DIAGRAM Class Class SOT-323/SC-70 CASE STYLE Specific Device Code Date Code THERMAL CHARACTERISTICS Characteristic Total Device Dissipation 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Lead Junction Storage Temperature Range FR-4 Minimum FR-4 inch Symbol (Note (Note (Note (Note (Note (Note (Note (Note +150 Unit mW/°C ORDERING INFORMATION °C/W °C/W Device NSF2250WT1 Package SOT-323 Shipping 3000/Tape Reel Tstg Semiconductor Components Industries, LLC, 2002 July, 2002 Rev. Publication Order Number: NSF2250WT1/D NSF2250WT1 ELECTRICAL CHARACTERISTICS 25°C) Characteristic Collector Cutoff Current, Current Gain, Collector Saturation Voltage, Gain Bandwidth Product, -5.0 Output Capacitance, Collector Base Time Constant, -5.0 31.9 Feedback Capacitance, Symbol ICBO VCE(sat) CCSrb'b 0.45 Unit POWER DISSIPATION (mW) 403°C/W AMBIENT TEMPERATURE (°C) Figure Derating Curve http://onsemi.com NSF2250WT1 COLLECTOR CURRENT (mA) hFE, CURRENT GAIN 125°C 25°C hFE, CURRENT GAIN COLLECTOR CURRENT -55°C Figure Current Gain versus Collector Current 10,000 GAIN BANDWIDTH PRODUCT (MHz) Figure Current Gain versus Collector Current CRE, FEEDBACK CAPACITANCE (pF) 25°C 1000 COLLECTOR CURRENT (mA) VCB, COLLECTOR BASE VOLTAGE (VOLTS) Figure Gain Bandwidth Product versus Collector Current Cob, CAPACITANCE (pF) 25°C Figure Device Capacitance versus Collector Base Voltage REVERSE BIAS VOLTAGE (VOLTS) Figure Output Capacitance http://onsemi.com NSF2250WT1 TYPICAL COMMON EMITTER SCATTERING PARAMETER 25°C) Freq 1000 1500 2000 2500 3000 0.926 0.855 0.667 0.513 0.411 0.342 0.297 0.261 0.236 0.218 0.205 0.190 0.215 0.230 0.236 -14.124 -26.794 -47.287 -60.931 -70.342 -77.461 -84.335 -90.986 -97.798 -104.905 -112.449 -147.224 -171.677 -172.291 -155.125 6.803 6.224 5.033 4.072 3.326 2.831 2.445 2.154 1.935 1.755 1.617 1.200 1.011 0.889 0.866 162.639 148.649 126.317 110.981 100.524 92.771 86.222 80.493 75.382 70.672 66.258 48.079 33.299 20.271 10.984 0.018 0.034 0.058 0.074 0.090 0.104 0.117 0.131 0.144 0.155 0.168 0.219 0.258 0.294 0.340 82.792 73.296 62.292 58.641 57.333 56.067 55.166 53.800 52.087 50.745 49.386 42.418 35.910 31.024 28.868 0.973 0.921 0.807 0.736 0.694 0.670 0.651 0.637 0.627 0.617 0.608 0.575 0.544 0.510 0.450 -7.062 -12.818 -19.210 -21.979 -23.695 -25.311 -27.095 -29.095 -31.026 -33.167 -35.352 -46.016 -58.267 -68.713 -81.517 TYPICAL COMMON EMITTER SCATTERING PARAMETER 25°C) Freq 1000 1500 2000 2500 3000 0.858 0.733 0.493 0.362 0.288 0.242 0.212 0.190 0.177 0.167 0.163 0.176 0.210 0.226 0.239 -20.126 -36.552 -58.358 -69.976 -78.272 -85.666 -93.237 -101.308 -109.656 -118.336 -127.188 -164.287 -174.155 -159.754 -144.224 12.065 10.452 7.472 5.544 4.337 3.582 3.048 2.656 2.375 2.145 1.968 1.435 1.187 1.034 0.995 156.269 139.116 115.678 103.053 94.866 88.592 83.504 78.785 74.561 70.348 66.700 50.083 35.998 23.227 14.088 0.017 0.029 0.047 0.062 0.075 0.090 0.103 0.116 0.128 0.141 0.153 0.203 0.246 0.288 0.340 78.802 69.100 62.893 62.188 61.876 61.259 59.861 58.802 57.017 55.629 53.851 47.574 41.767 36.614 34.458 0.945 0.850 0.712 0.653 0.621 0.603 0.590 0.580 0.573 0.563 0.555 0.528 0.501 0.469 0.413 -10.278 -16.656 -20.497 -21.545 -22.551 -23.975 -25.526 -27.405 -29.334 -31.402 -33.301 -43.164 -54.213 -63.689 -74.387 http://onsemi.com NSF2250WT1 TYPICAL COMMON EMITTER SCATTERING PARAMETER 25°C) Freq 1000 1500 2000 2500 3000 0.643 0.459 0.289 0.225 0.192 0.172 0.161 0.156 0.155 0.156 0.163 0.201 0.237 0.247 0.259 -35.313 -53.013 -70.035 -80.644 -91.607 -102.488 -113.748 -125.151 -135.549 -145.469 -153.718 -175.526 -159.398 -147.097 -133.925 15.384 11.650 7.214 5.260 4.122 3.419 2.929 2.575 2.313 2.099 1.925 1.415 1.173 1.021 0.982 140.063 121.580 104.714 96.934 91.266 86.447 82.212 78.231 74.282 70.461 67.004 50.535 36.726 24.113 15.023 0.015 0.024 0.040 0.053 0.068 0.082 0.096 0.107 0.119 0.131 0.141 0.193 0.240 0.289 0.346 69.823 63.636 65.531 66.205 66.344 64.574 63.206 61.822 60.606 59.154 57.409 52.024 46.396 41.529 38.491 0.864 0.738 0.647 0.618 0.598 0.584 0.572 0.561 0.553 0.543 0.536 0.505 0.477 0.444 0.382 -14.048 -17.013 -17.265 -18.444 -20.216 -22.273 -24.418 -26.828 -28.821 -31.132 -33.247 -43.365 -54.652 -64.094 -75.243 TYPICAL COMMON EMITTER SCATTERING PARAMETER 25°C) Freq 1000 1500 2000 2500 3000 0.877 0.765 0.539 0.406 0.334 0.286 0.252 0.227 0.208 0.190 0.179 0.162 0.185 0.200 0.208 -17.278 -31.274 -49.213 -57.758 -63.347 -68.461 -73.828 -79.612 -86.135 -93.121 -100.507 -139.494 -167.453 -175.534 -159.130 11.972 10.386 7.575 5.678 4.464 3.698 3.159 2.766 2.474 2.237 2.047 1.495 1.242 1.082 1.050 157.707 140.944 118.277 105.478 97.467 91.347 86.264 81.745 77.803 73.571 70.150 53.949 40.156 27.306 18.234 0.012 0.022 0.037 0.049 0.062 0.073 0.085 0.095 0.106 0.116 0.125 0.169 0.207 0.247 0.296 81.580 72.099 66.849 66.104 65.473 64.460 63.014 62.100 60.785 59.532 57.905 52.604 47.697 44.045 42.716 0.972 0.900 0.803 0.757 0.729 0.717 0.706 0.697 0.690 0.682 0.674 0.652 0.631 0.609 0.557 -7.268 -12.126 -14.944 -16.182 -17.508 -19.007 -20.874 -22.551 -24.442 -26.405 -28.385 -37.411 -47.834 -55.962 -65.696 http://onsemi.com NSF2250WT1 j100 120° 150° 0.05 -j10 -150° 180° 0.05 -30° -j25 -j50 -j100 -120° -90° -60° Figure Input Reflection Coefficient Figure Reverse Transmission Coefficient j100 120° 150° 0.05 0.05 -j10 -150° 180° -30° -j25 -j50 -j100 -120° -90° -60° Figure Output Reflection Coefficient Figure Forward Transmission Coefficient http://onsemi.com NSF2250WT1 j100 120° 150° 180° 0.05 -j10 0.05 -150° -30° -j25 -j50 -j100 -120° -90° -60° Figure Input Reflection Coefficient Figure Reverse Transmission Coefficient j100 120° 150° 0.05 0.05 180° -j10 -150° -30° -j25 -j50 -j100 -120° -90° -60° Figure Output Reflection Coefficient Figure Forward Transmission Coefficient http://onsemi.com NSF2250WT1 TYPICAL COMMON BASE SCATTERING PARAMETER 25°C) Freq 1000 1500 2000 0.627 0.626 0.622 0.608 0.589 0.566 0.541 0.476 0.397 176.455 172.821 165.583 151.867 138.455 126.103 114.811 89.445 68.206 1.6218 1.6153 1.6042 1.5630 1.5099 1.4461 1.3613 1.1404 0.8928 -3.3808 -6.8404 -13.205 -26.289 -39.579 -52.382 -65.315 -98.892 -133.58 0.003 0.008 0.014 0.031 0.052 0.076 0.102 0.170 0.233 81.692 87.954 92.620 96.834 96.285 94.675 90.577 78.774 68.003 1.006 1.002 1.005 1.006 1.016 1.022 1.026 1.014 0.922 -1.7455 -3.5734 -6.7806 -13.779 -21.141 -28.553 -36.519 -57.448 -77.708 TYPICAL COMMON BASE SCATTERING PARAMETER 25°C) Freq 1000 1500 2000 0.781 0.780 0.776 0.759 0.743 0.725 0.709 0.674 0.620 176.95 174.093 168.012 156.688 145.893 135.660 126.241 103.465 81.3686 1.7732 1.7625 1.7622 1.7285 1.6911 1.6441 1.5817 1.4275 1.1968 -3.0425 -5.9870 -11.733 -23.541 -35.161 -46.886 -58.697 -90.316 -123.89 0.004 0.006 0.013 0.029 0.047 0.071 0.095 0.172 0.249 85.472 88.871 94.408 100.70 100.93 98.938 95.803 85.633 73.589 1.006 1.002 1.004 1.006 1.015 1.024 1.031 1.037 0.957 -1.6658 -3.5604 -6.7723 -13.627 -20.799 -28.057 -35.921 -56.915 -77.953 TYPICAL COMMON BASE SCATTERING PARAMETER 25°C) Freq 1000 1500 2000 0.867 0.863 0.851 0.821 0.795 0.782 0.773 0.765 0.730 176.898 173.941 167.942 157.527 148.933 139.487 131.501 110.253 87.937 1.8601 1.8432 1.8370 1.7814 1.7303 1.6831 1.6327 1.4975 1.2711 -3.2938 -6.3479 -12.359 -23.95 -34.993 -46.443 -57.916 -89.11 -123.21 0.004 0.007 0.014 0.029 0.045 0.067 0.091 0.169 0.253 88.195 90.044 91.598 96.128 97.955 98.521 96.532 88.005 76.070 1.006 1.001 1.003 1.003 1.011 1.018 1.024 1.031 0.950 -1.7132 -3.6916 -6.9503 -13.909 -21.082 -28.456 -36.296 -57.462 -78.777 http://onsemi.com NSF2250WT1 j100 120° 150° 0.05 180° 0.05 0.15 0.25 -j10 -150° -30° -j25 -j50 -j100 -120° -90° -60° Figure Input Reflection Coefficient Figure Reverse Transmission Coefficient j100 120° 150° 0.05 180° 0.05 0.15 0.25 0.05 -j10 -150° -30° -j25 -j50 -j100 -120° -90° -60° Figure Output Reflection Coefficient Figure Forward Transmission Coefficient http://onsemi.com NSF2250WT1 INFORMATION USING SC-70/SOT-323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT SURFACE MOUNTED APPLICATIONS Surface mount board layout critical portion total design. footprint semiconductor packages must correct size insure proper solder connection 0.025 0.65 interface between board package. With correct geometry, packages will self align when subjected solder reflow process. 0.025 0.65 0.075 0.035 0.028 inches SC-70/SOT-323 POWER DISSIPATION power dissipation SC-70/SOT-323 function size. This vary from minimum size soldering size given maximum power dissipation. Power dissipation surface mount device determined TJ(max), maximum rated junction temperature die, RJA, thermal resistance from device junction ambient; operating temperature, Using values provided data sheet, calculated follows. TJ(max) equation ambient temperature 25°C, calculate power dissipation device which this case milliwatts. 150°C 25°C 0.625°C/W milliwatts values equation found maximum ratings table data sheet. Substituting these values into 0.625°C/W assumes recommended footprint glass epoxy printed circuit board achieve power dissipation milliwatts. Another alternative would ceramic substrate aluminum core board such Thermal Clad®. Using board material such Thermal Clad, higher power dissipation milliwatts achieved using same footprint. SOLDERING PRECAUTIONS melting temperature solder higher than rated temperature device. When entire device heated high temperature, failure complete soldering within short time could result device failure. Therefore, following items should always observed order minimize thermal stress which devices subjected. Always preheat device. delta temperature between preheat soldering should 100°C less.* When preheating soldering, temperature leads case must exceed maximum temperature ratings shown data sheet. When using infrared heating with reflow soldering method, difference should maximum 10°C. soldering temperature time should exceed 260°C more than seconds. When shifting from preheating soldering, maximum temperature gradient should less. After soldering been completed, device should allowed cool naturally least three minutes. Gradual cooling should used forced cooling will increase temperature gradient result latent failure mechanical stress. Mechanical stress shock should applied during cooling Soldering device without preheating cause excessive thermal shock stress which result damage device. http://onsemi.com NSF2250WT1 PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 0.026 0.028 0.079 0.095 MILLIMETERS 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 0.650 0.700 2.00 2.40 0.05 (0.002) STYLE BASE EMITTER COLLECTOR http://onsemi.com NSF2250WT1 Thermal Clad registered trademark Bergquist Company. Semiconductor trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer. 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