2SK3324 DESCRIPTION 2SK3324 N-Channel device that features g
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FIELD EFFECT TRANSISTOR
2SK3324
DESCRIPTION
2SK3324 N-Channel device that features gate charge excellent switching characteristics, Designed high voltage applications such switching power supply, adapter.
ORDERING INFORMATION
PART NUMBER 2SK3324 PACKAGE TO-3P
FEATURES
gate charge TYP. (VDD Gate voltage rating on-state resistance RDS(on) MAX. (VGS Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) Tstg
Note2 Note2
21.6
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Total Power Dissipation 25°C) Storage Temperature Single Avalanche Current Single Avalanche Energy
Notes Duty cycle Starting
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Document D14203EJ1V0DS00 (1st edition) Date Published July 1999 CP(K) Printed Japan
1999
2SK3324
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Leakage Current Gate Source Leakage Current Gate Source Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) 1000 MIN. TYP. MAX. ±100 UNIT TEST CONDITIONS VGS(on) di/dt A/µs
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
BVDSS
Duty Cycle
Wave Form
td(on) td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14203EJ1V0DS00
2SK3324
TYPICAL CHARACTERISTICS
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Case Temperature
Case Temperature
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
Drain Current
ID(pulse)
25°C Single Pulse
1000
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS 125°C 75°C 25°C -25°C
Drain Current
0.01 Pulsed
Gate Source Voltage
Data Sheet D14203EJ1V0DS00
2SK3324
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A)= 41.7
Rth(ch-C)= 1.04
0.01 0.001 0.0001 25°C Single Pulse 0.001 0.01 1000
Pulse Width
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Forward Transfer Admittance
RDS(on) Drain Source On-state Resistance
-25°C 25°C 75°C 125°C
0.01
Pulsed
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
VGS(off) Gate Source Cut-off Voltage
Pulsed
0.01
Drain Current
Channel Temperature
Data Sheet D14203EJ1V0DS00
2SK3324
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
Source Drain Voltage
Channel Temperature
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
Ciss, Coss, Crss Capacitance
td(on), td(off), Switching Time
Ciss
td(off) td(on)
1000
Coss
Crss
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT 10000
Drain Source Voltage
Reverse Recovery Time
di/dt
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
Drain Current
Gate Charge
Data Sheet D14203EJ1V0DS00
2SK3324
SINGLE AVALANCHE ENERGY INDUCTIVE LOAD 100.0
SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Energy
Energy Derating Factor
1.00E-01
10.0
1.00E-04 1.00E-03
1.00E-02
Inductive Load
Starting Starting Channel Temperature
Data Sheet D14203EJ1V0DS00
2SK3324
PACKAGE DRAWING (Unit
TO-3P (MP-88) EQUIVALENT CIRCUIT
Drain
MAX.
TYP. 4.5±0.2
3.2±0.2 15.7 MAX.
TYP.
20.5 MAX. TYP.
18.7±0.4
TYP.
Gate
Body Diode
Source
MIN.
MAX.
2.2±0.2
1.0±0.2
0.6±0.1
2.8±0.1
5.45 TYP.
5.45 TYP.
Gate Drain Source (Drain)
Remark
Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred.
Data Sheet D14203EJ1V0DS00
2SK3324
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