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2N7000 2N7002 NDS7002A N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed minimize on-state resistance while provide rugged, reliable, fast switching performance. They used most applications requiring 400mA deliver pulsed currents These products particularly suited voltage, current applications such small servo motor control, power MOSFET gate drivers, other switching applications.
Features
High density cell design RDS(ON). Voltage controlled small signal switch. Rugged reliable. High saturation current capability.
TO-92
2N7000
(TO-236AB) 2N7002/NDS7002A
Absolute Maximum Ratings
Symbol Parameter
25°C unless otherwise noted
2N7000 2N7002 NDS7002A
Units
VDSS
Drain-Source Voltage
VDGR
VGSS
Drain-Gate Voltage (RGS
Gate-Source Voltage Continuous Repetitive 50µs)
1500
TJ,TSTG
Maximum Drain Current Continuous Pulsed Maximum Power Dissipation Derated above Operating Storage Temperature Range Maximum Lead Temperature Soldering Purposes, 1/16" from Case Seconds
mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
312.5
°C/W
1997 Fairchild Semiconductor Corporation
2N7000.SAM Rev.
Electrical Characteristics
Symbol Parameter CHARACTERISTICS
25°C unless otherwise noted
Conditions
Type
Units
BVDSS IDSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
TJ=125°C TJ=125°C
2N7000
2N7002 NDS7002A 2N7000 2N7002 NDS7002A 2N7000 2N7002 NDS7002A
-100
IGSSF
Gate Body Leakage, Forward
IGSSR
Gate Body Leakage, Reverse
CHARACTERISTICS (Note
VGS(th)
Gate Threshold Voltage
VGS, VGS,
2N7000 2N7002 NDS7002A 2N7000
13.5 13.5 3.75 0.15
RDS(ON)
Static Drain-Source On-Resistance =125°C =100°C =100C =125°C =125°C
2N7002
NDS7002A
VDS(ON)
Drain-Source On-Voltage
500mA 500mA
2N7000
0.14 0.09 0.09
2N7002
NDS7002A
2N7000.SAM Rev.
Electrical Characteristics
Symbol Parameter
25oC unless otherwise noted
Conditions
Type
Units
CHARACTERISTICS Continued (Note
ID(ON)
On-State Drain Current
VDS(on) VDS(on)
2N7000 2N7002 NDS7002A 2N7000 2N7002 NDS7002A
2700 2700
Forward Transconductance
VDS(on), VDS(on),
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time
RGEN RGEN
2N7000
2N700 NDS7002A
toff
Turn-Off Time
RGEN RGEN
2N7000
2N700 NDS7002A
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage (Note (Note
2N7002 NDS7002A 2N7002 NDS7002A 2N7002 NDS7002A
0.88 0.88
Note: Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
2N7000.SAM Rev.
Typical Electrical Characteristics
2N7000 2N7002 NDS7002A
DRAIN-SOURCE CURRENT
RDS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
=4.0V
DRAIN-SOURCE VOLTAGE
CURRENT
Figure On-Region Characteristics
Figure On-Resistance Variation with Gate Voltage Drain Current
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.75
500m
DS(on) NORMALIZED
DS(ON) NORMALIZED
1.25
25°C
-55°C
0.75
JUNCTION EMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature
Figure On-Resistance Variation with Drain Current Temperature
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
DRAIN CURRENT
-55°C
25°C 125°C
GATE SOURCE VOLTAGE
JUNCTION PERATURE (°C)
Figure Transfer Characteristics
Figure Gate Threshold Variation with Temperature
2N7000.SAM Rev.
Typical Electrical Characteristics (continued)
2N7000 2N7002 /NDS7002A
DRAIN-SOURCE BREAKDOWN VOLTAGE
250µA
REVERSE DRAIN CURRENT
1.075 1.05 1.025 0.975 0.95 0.925
NORMALIZED
25°C
JUNCTION PERATURE (°C)
BODY DIODE FORW VOLTAGE
Figure Breakdown Voltage Variation with Temperature
Figure Body Diode Forward Voltage Variation with
GATE-SOURCE VOLTAGE
CAPACITANCE (pF)
DRAIN SOURCE VOLTAGE
280m 115m
GATE CHARGE (nC)
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
d(on)
d(off)
Output, Vout
Inverted
Input,
Pulse Width
Figure
Figure Switching Waveforms
2N7000.SAM Rev.
Typical Electrical Characteristics (continued)
DRAIN CURRENT DRAIN CURRENT
0.05
0.05
SINGLE PULSE
0.01 0.005
25°C
SINGLE PULSE
0.01 0.005
25°C
DRAIN-SOURCE VOLTAGE
DRAIN-SOURCE VOLTAGE
Figure 2N7000 Maximum Safe Operating Area
DRAIN CURRENT
Figure 2N7002 Maximum Safe Operating Area
0.05
SINGLE PULSE
0.01 0.005
25°C
DRAIN-SOURCE VOLTAGE
Figure NDS7000A Maximum Safe Operating Area
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.05
P(pk) 0.05
r(t) (See Datasheet)
0.01
0.02 0.01 0.0001
Single Pulse
Duty Cycle,
0.001
0.01
TIME (sec)
Figure TO-92, 2N7000 Transient Thermal Response Curve
TRANSIENT THERMAL RESISTANCE 0.05
P(pk)
r(t), NORMALIZED EFFECTIVE
r(t) (See Datasheet)
0.01
Single Pulse
0.002 0.001 0.0001 0.001 0.01 TIME (sec)
Duty Cycle,
Figure SOT-23, 2N7002 NDS7002A Transient Thermal Response Curve
2N7000.SAM Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST
DISCLAIMER
PowerTrench QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER SMART STARTSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTinyLogicUHCVCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
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