SIPMOS Small-Signal-Transistor Features N-Channel Product Su

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SIPMOS Small-Signal-Transistor Features N-Channel Product Su

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BSP318S
SIPMOS Small-Signal-Transistor
Features N-Channel
Product Summary Drain source voltage Continuous drain current
0.09
Enhancement mode
Drain-Source on-state resistance RDS(on)
Avalanche rated Logic Level dv/dt rated
VPS05163
Type BSP318S
Package SOT-223
Ordering Code Q67000-S4002
Maximum Ratings,at unless otherwise specified Parameter Symbol Continuous drain current Pulsed drain current
Value 10.4 0.18
Unit
puls
dv/dt
Avalanche energy, single pulse kV/µs
Avalanche current,periodic limited jmax Avalanche energy, periodic limited Tjmax Reverse diode dv/dt
di/dt A/µs, jmax
Gate source voltage Power dissipation
Ptot Tstg
-55. +150 55/150/56
Operating storage temperature climatic category; 68-1
Page
1999-10-28
Thermal Characteristics Parameter Characteristics Thermal resistance, junction soldering point (Pin version, device PCB: min. footprint cooling area Symbol min. Values typ.
BSP318S
Unit max.
RthJS RthJA
Electrical Characteristics, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. max. 0.12 0.07 0.15 0.09 Unit
V(BR)DSS VGS(th) IDSS
0.25
Gate threshold voltage, Zero gate voltage drain current
Gate-source leakage current
IGSS RDS(on) RDS(on)
Drain-Source on-state resistance
Drain-Source on-state resistance
1Device 50mm*50mm*1.5mm epoxy with 6cm2 (one layer, thick) copper area drain connection. vertical without blown air. Page
1999-10-28
Electrical Characteristics, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Transconductance typ.
BSP318S
Unit max.
Ciss Coss Crss td(on)
VDS2*I D*RDS(on)max
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
td(off)
Fall time
Page
1999-10-28
Electrical Characteristics, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Gate charge threshold typ.
BSP318S
Unit max.
QG(th) Qg(5) V(plateau)
Gate charge Gate charge total
Gate plateau voltage
Parameter Reverse Diode Inverse diode continuous forward current
Symbol min.
Values typ. 0.95 max. 10.4 0.15
Unit
Inverse diode direct current,pulsed
Inverse diode forward voltage
Reverse recovery time
IF=I F/dt A/µs
Reverse recovery charge
IF=l diF/dt A/µs
Page
1999-10-28
Power Dissipation Drain current
BSP318S
Ptot (TA)
BSP318S
BSP318S
Ptot
Safe operating area
Transient thermal impedance
parameter
ZthJA f(tp
parameter
BSP318S
BSP318S
140.0µs
thJA
0.50 0.20 0.10
single pulse
0.05 0.02 0.01
Page
1999-10-28
Typ. output characteristic
BSP318S
Typ. transfer characteristics
(VDS); j=25°C parameter:
BSP318S
RDS(on)max parameter:
Ptot 1.80W
10.0
Drain-source on-resistance
Gate threshold voltage
RDS(on) (Tj)
parameter
BSP318S
VGS(th) (Tj)
parameter:
0.36
0.28
RDS(on)
0.24 0.20
GS(th)
0.16 0.12 0.08 0.04 0.00
Page
1999-10-28
Typ. capacitances parameter: VGS=0
BSP318S
Forward characteristics reverse diode
(VSD
parameter:
BSP318S
Ciss
Coss Crss
(98%) (98%)
Avalanche Energy
Typ. gate charge
parameter:
(QGate parameter: pulsed
BSP318S
Page
QGate
1999-10-28
Drain-source breakdown voltage
BSP318S
V(BR)DSS (Tj)
BSP318S
V(BR)DSS
Page
1999-10-28
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved. Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer.
BSP318S
Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Page
1999-10-28

SIPMOS Small-Signal-Transistor Features N-Channel Product Su

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