SIPMOS Small-Signal-Transistor Product Summary RDS(on) P-Cha
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SIPMOS Small-Signal-Transistor
Product Summary RDS(on)
P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated
-0.17
SOT-23
VPS05161
Drain
Type
Package SOT-23
Ordering Code Q67041-S1417
Marking
Gate pin1 Source
Maximum Ratings, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol
Value -0.17 -0.14
Unit
Pulsed drain current
TA=25°C
puls dv/dt Ptot Tstg
-0.68 0.036 0.36 -55. +150 55/150/56 kV/µs
Avalanche energy, single pulse
ID=-0.17 VDD=-25V, RGS=25W
Avalanche energy, periodic limited Tjmax Reverse diode dv/dt
IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C
Gate source voltage Power dissipation
TA=25°C
Operating storage temperature climatic category; 68-1
Page
2002-09-04
Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction soldering point (Pin version, device PCB:
min. footprint cooling area
Symbol min. RthJS RthJA
Values typ. max.
Unit
Electrical Characteristics, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS=0, =-250µA
Symbol min. V(BR)DSS VGS(th) RDS(on) RDS(on)
Values typ. -1.5 max.
Unit
Gate threshold voltage,
ID=-20µA
Zero gate voltage drain current
VDS=-60V, VGS=0, =25°C VDS=-60V, VGS=0, =125°C
-0.1 -100 -100
Gate-source leakage current
VGS=-20V, VDS=0
Drain-source on-state resistance
VGS=-4.5V, ID=-0.14A
Drain-source on-state resistance
VGS=-10V, ID=-0.17A
1Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. Page
2002-09-04
Final data Electrical Characteristics, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) td(off)
VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25W ID=-0.14A VGS=0, VDS=-25V, f=1MHz
Symbol
Conditions min. 0.065
Values typ. 0.13 16.2 20.5 max. 24.3 12.9 30.8
Unit
Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge
VGS=0, IF=-0.17A VR=-30V, IF=lS, diF/dt=100A/µs
VDD=-48V, ID=-0.17A
0.25 -3.42
0.37 0.45
VDD=-48V, ID=-0.17A, VGS=0 -10V
V(plateau) VDD=-48V, ID=-0.17A
TA=25°C
-0.93
-0.17 -0.68 -1.24
Page
2002-09-04
Final data Power dissipation Ptot (TA)
0.38
Drain current (TA) parameter:
-0.18
0.32 -0.14 0.28
-0.1 -0.08 -0.06 -0.04 -0.02
0.24 0.16 0.12 0.08 0.04
-0.12
Safe operating area parameter
Transient thermal impedance ZthJA parameter
170.0µs
thJA
0.50
0.20 0.10 0.05 single pulse 0.02 0.01
Page
2002-09-04
Final data Typ. output characteristic (VDS) parameter:
-0.4
Ptot 0.36W
Typ. drain-source resistance RDS(on) (ID) parameter:
-2.5
-0.32
-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0
-0.28
DS(on)
-0.24 -0.2 -0.16 -0.12 -0.08 -0.04
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0
-5.5 -6.0 -6.5 -7.0
-8.0 -10.0
-0.5
-1.5
-2.5
-3.5
-0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 -0.38
Typ. transfer characteristics parameter:
|VDS RDS(on)max
Typ. forward transconductance f(ID) parameter:
0.16
0.12
0.25
0.08
0.15
0.06
0.04
0.05
0.02
0.04
0.08
0.12
0.16
0.22
Page
2002-09-04
Final data Drain-source on-state resistance RDS(on) parameter -0.17 Typ. gate threshold voltage VGS(th) parameter:
DS(on)
GS(th)
typ.
Typ. capacitances (VDS) parameter:
Forward character. reverse diode (VSD) parameter:
Ciss
Coss
Crss
(98%) (98%)
-0.4
-0.8
-1.2
-1.6
-2.4
Page
2002-09-04
Final data Typ. avalanche energy (TA), parameter:
Typ. gate charge (QGate parameter: -0.17 pulsed;
-0.17
QGate
Drain-source breakdown voltage V(BR)DSS (TA)
(BR)DSS
Page
2002-09-04
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved. Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer.
Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Page
2002-09-04
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