SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode

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SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode

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SIPMOS Small-Signal-Transistor
Feature P-Channel Enhancement mode Avalanche rated dv/dt rated
Product Summary DS(on) -1.9
SOT-223
VPS05163
Drain
Type
Package SOT-223
Ordering Code Q67041-S4018
Gate pin1 Source
Maximum Ratings,at unless otherwise specified Parameter Symbol Value Unit
Continuous drain current
TA=25°C TA=70°C
-1.9 -1.5
Pulsed drain current
TA=25°C
puls
-7.6 0.18 -55. +150 55/150/56 kV/µs
Avalanche energy, single pulse
=-1.9 =-25V,
Avalanche energy, periodic limited Tjmax Reverse diode dv/dt
=-1.9A, =-48V, di/dt=-200A/µs, Tjmax =150°C
dv/dt
Ptot Tstg
Gate source voltage Power dissipation
TA=25°C
Operating storage temperature climatic category; 68-1
Page
2002-01-16
Thermal Characteristics Parameter Characteristics Thermal resistance, junction soldering point (Pin version, device PCB:
min. footprint cooling area
Symbol min. RthJS RthJA
Values typ. max.
Unit
Electrical Characteristics, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
ID=-250µA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) -2.1
Values typ. max.
Unit
Gate threshold voltage,
=-250µA
Zero gate voltage drain current
=-60V, VGS=0, =25°C =-60V, VGS=0, =125°C
-0.1 0.24 -100 -100
Gate-source leakage current
=-20V,
Drain-source on-state resistance
=-10V, =-1.9
1Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air.
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2002-01-16
Electrical Characteristics, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) td(off)
=-30V, VGS=-10V, =-1.9A, RG=6 2*ID*RDS(on)max =-1.9 =-25V, f=1MHz
Symbol
Conditions min.
Values typ. max.
Unit
Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
=-48V, =-1.9A, -10V =-48V, =-1.9A
-1.4 -3.6 -12.5 -3.85
-2.1 -5.4
V(plateau) =-48V, =-1.9A
Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge
IF=-1.9A =-30V, IF=lS, /dt=-100A/µs =-30V, IF=lS, /dt=100A/µs
TA=25°C
-0.85
-1.9 -7.6 -1.1
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2002-01-16
Power dissipation Ptot
Drain current parameter: |VGS
-1.6 -1.4
Ptot
-1.2 -0.8 -0.6 -0.4 -0.2
Safe operating area parameter 25°C
340.0µs
Transient thermal impedance ZthJS parameter
thJS
0.50 0.20 0.10
0.05 single pulse 0.02 0.01
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2002-01-16
Typ. output characteristic (VDS Tj=25°C parameter:
Typ. drain-source resistance RDS(on) parameter:
Ptot 1.8W
-4.0
-3.5
-4.5 -5.0 -5.5 -6.0 -6.5 -7.0
RDS(on)
-2.5 -1.5 -0.5
-4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0
-0.5
-1.5
-2.5
-3.5
-0.4 -0.8 -1.2 -1.6
-2.4 -2.8
-3.4
Typ. transfer characteristics RDS(on)max parameter:
Typ. forward transconductance f(ID); Tj=25°C parameter:
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2002-01-16
Drain-source on-state resistance RDS(on) parameter -1.9
Gate threshold voltage VGS(th) (Tj) parameter: -250
RDS(on)
VGS(th)
typ.
Typ. capacitances (VDS) parameter:
Forward character. reverse diode (VSD parameter:
Ciss
Coss
(98%) (98%)
Crss
-0.4
-0.8
-1.2
-1.6
-2.4
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2002-01-16
Typ. avalanche energy par.: -1.9
Typ. gate charge (QGate parameter: -1.9 pulsed
|QGate
Drain-source breakdown voltage V(BR)DSS
(BR)DSS
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2002-01-16
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved. Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer.
Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Page
2002-01-16

SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode

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