Silicon N-Channel MOSFET Tetrode Short-channel transistor with high qu
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BF998R
Silicon N-Channel MOSFET Tetrode Short-channel transistor with high quality factor low-noise, gain-controlled input stages
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF998R Marking Configuration 3=G1 4=G2 Package SOT143R
Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate peak source current Total power dissipation, Storage temperature Channel temperature Symbol ±IG1/2SM Ptot Tstg Value Unit
Thermal Resistance Channel soldering point1) Rthchs
1For calculation thJA please refer Application Note Thermal Resistance
Aug-10-2001
BF998R
Electrical Characteristics unless otherwise specified. Parameter Symbol Values min. characteristics Drain-source breakdown voltage VG1S VG2S Gate source breakdown voltage ±IG1S VG2S Gate source breakdown voltage ±IG2S VG1S Gate source leakage current ±VG1S VG2S Gate source leakage current ±VG2S VG1S Drain current VG1S VG2S Gate source pinch-off voltage VG2S Gate source pinch-off voltage VG1S -VG2S(p) -VG1S(p) IDSS ±IG2SS ±IG1SS ±V(BR)G1SS ±V(BR)G2SS V(BR)DS typ. max.
Unit
Aug-10-2001
BF998R
Electrical Characteristics Parameter characteristics Forward transconductance VG2S Gate input capacitance VG2S Gate input capacitance VG2S Feedback capacitance VG2S Output capacitance VG2S Power gain VG2S Power gain VG2S Noise figure VG2S Noise figure VG2S VG2S -2V, Gain control range Cdss Cdg1 Cg2ss Cg1ss Symbol min. Values typ. max. Unit
Aug-10-2001
BF998R
Total power dissipation Ptot f(TS)
Output characteristics (VDS
EHT07333
VG1S
-0.2
-0.4 -0.6
Gate forward transconductance
gfs1 (VG1S
EHT07293
Gate forward transconductance
G2S)
EHT07294
VG2S
VG1S 0.25
-0.25
VG1S
VG2S
Aug-10-2001
BF998R
Gate forward transconductance
gfs1
EHT07295
Gate input capacitance Cg1ss (VG1S)
g1ss
EHT07296
VG2S
VG1S
Gate input capacitance Cg2ss (VG2S)
Output capacitance
Cg2ss
EHT07297
Cdss
EHT07298
VG2S
Aug-10-2001
BF998R
Drain current (VG1S
Power gain (VG2S)
VG2S
EHT07299
EHT07300
VG2S
Noise figure (VG2S
EHT07301
Power gain (VG2S)
EHT07302
VG2S
Aug-10-2001
BF998R
Noise figure (VG2S
EHT07303
Gate input admittance y11s (common source)
EHT07304 1200 1100 1000
Gate forward transfer admittance y21s (common source)
EHT07305
Output admittance (common-source)
EHT07306
1200 1100
1000
1000
1100 1200
Aug-10-2001
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