Silicon N-Channel MOSFET Tetrode Short-channel transistor with high qu
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BF998
Silicon N-Channel MOSFET Tetrode Short-channel transistor with high quality factor low-noise, gain-controlled input stages
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF998
Maximum Ratings Parameter
Marking
Configuration 3=G2 4=G1
Package SOT143
Symbol ±IG1/2SM Ptot Tstg Symbol
Rthchs
Value
Unit
Drain-source voltage Continuous drain current Gate gate 2-source current Total power dissipation Storage temperature Channel temperature Thermal Resistance Parameter Channel soldering point1)
Value
Unit
1For calculation thJA please refer Application Note Thermal Resistance
Apr-14-2003
BF998
Electrical Characteristics Parameter Characteristics Drain-source breakdown voltage VG1S VG2S Gate source breakdown voltage ±IG2S VG2S Gate2 source breakdown voltage ±IG2S VG2S Gate source leakage current VG2S Gate source leakage current VG2S Drain current VG1S VG2S Gate source pinch-off voltage VG2S Gate source pinch-off voltage VG1S -VG2S(p) -VG1S(p) IDSS ±IG2SS ±IG1SS (BR)G2SS (BR)G1SS V(BR)DS Symbol min. Values typ. max. Unit
Apr-14-2003
BF998
Electrical Characteristics Parameter Characteristics Forward transconductance VG2S Gate1 input capacitance VG2S Gate input capacitance VG2S Feedback capacitance VG2S Output capacitance VG2S Power gain VG2S VG2S Noise figure VG2S VG2S Gain control range VG2S Cdss Cdg1 Cg2ss Cg1ss Symbol min. Values typ. max. Unit
Apr-14-2003
BF998
Total power dissipation Ptot (TS) Output characteristics VG2S VG1S Parameter
0.4V
0.2V
-0.2V
-0.4V
Gate forward transconductance (ID) VG2S Parameter
Gate forward transconductance G1S)
-0.75
-0.5
-0.25
0.25
0.75
VG1S
Apr-14-2003
BF998
Drain current (VG1S) VG2S Parameter
Power gain (VG2S)
-0.75 -0.5 -0.25
0.25
VG1S
VG2S
Noise figure (VG2S)
Power gain (VG2S)
VG2S
VG2S
Apr-14-2003
BF998
Noise figure (VG2S)
Gate input capacitance Cg1ss (VG1S)
g1ss
-2.6
-2.2
-1.8
-1.4
-0.6
VG2S
VG1S
Output capacitance Cdss (VDS)
Cdss
Apr-14-2003
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