Band High Gain MMIC eless Silicon Discr etes Edition 20

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Band High Gain MMIC eless Silicon Discr etes Edition 20

Datasheet Thumbnail

Top Searches for this datasheet

Band High Gain
MMIC
eless Silicon Discr etes
Edition 2002-05-03 Published Infineon Technologies St.-Martin-Strasse D-81541
Infineon Technologies 2002
Rights Reserved. Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Representatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
BGA430 Preliminary data sheet Revision History: 2002-05-03 Previous Version: Page 2002-01-22 Subjects (major changes since last revision) Maximum input power specified
Preliminary
questions technology, delivery prices please contact Infineon Technologies Offices Germany Infineon Technologies Companies Representatives worldwide: webpage http://www.infineon.com
Preliminary
Broad Band High Gain
BGA430
Features High gain |S21|2: GHz, 2.15 noise figure F50: GHz, 2.15 Matched Reverse isolation 40dB Small SOT363 package Typical supply voltage: SIEGET®-25 technology
VPS05604
Applications amplifiers CATV systems Boxes Buffer amplifiers wide band applications Description
GND2 RFout
GND1
GND1
BGA430 broad band high gain amplifier based upon Infineon Technologies' Silicon Bipolar Technology B6HF. Housed small SOT363 package this Silicon Monolithic Microwave Integrated Circuit (MMIC) requires very external components integrated biasing concept. advanced B6HF process BGA430 achieves exceptional noise figure high gain 2.15 GHz.
RFin
Bias
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA430 Package SOT363 Marking
Chip T0509
2002-05-03
Preliminary data sheet
BGA430
Preliminary Maximum Ratings
Note: voltages refer GND-Node
Parameter Device voltage Device current Current into Input power1) Total power dissipation, 80°C2) Junction temperature Ambient temperature range Storage temperature range Thermal resistance: junction-soldering point
Symbol Ptot TSTG
Value +150 +150
Unit
Valid ZS=ZL=50, VCC=5V VCC=0V measured emitter lead soldering point
Electrical Characteristics TA=25°C (measured application fig. VCC=5V, unless otherwise specified Parameter Insertion power gain Noise figure (ZS=50) f=0.9GHz f=2.15GHz f=0.9GHz f=2.15GHz Symbol |S21|2 P-1dB OIP3 RLIn RLOut min. typ. max. Unit
Output power gain compression ZL=50 f=0.9GHz f=2.15GHz Output third order intercept point f=0.9GHz ZS/L=50 f=2.15GHz Input return loss Output return loss Device current
f=0.9GHz f=2.15GHz f=0.9GHz f=2.15GHz
Note: measurement results compensated losses: 0.05 GHz, 2.15 RFin RFout
Preliminary data sheet
2002-05-03
BGA430
Preliminary Power Gain |S21|2, f(f)
Reverse Isolation |S12| f(f)
|S21|2
|S21|2, [dB]
|S12| [dB]
Frequency [GHz]
Frequency [GHz]
Matching |S11|, |S22| f(f)
Stability f(f)
|S11|, |S22| [dB]
Frequency [GHz]
Frequency [GHz]
Preliminary data sheet
2002-05-03
BGA430
Preliminary Noise figure f(f)
Power Gain |S21|2=f(TA,f) parameter
|S21|2 [dB]
[dB]
[GHz]
[GHz]
Output Compression Point P-1dB=f(TA,f) Output Order Intercept Point parameter =f(T ,f), parameter
P-1dB [dBm]
[dBm]
[GHz]
[GHz]
Preliminary data sheet
2002-05-03
BGA430
Preliminary Typical Application
RFout GND2 RFout
GND1
GND1
RFin RFin Bias Voltage Supply
Figure Notes:
Typical application circuit
high gain BGA430 blocking supply (VCC) done very carefully. broad-band impedance path provided VCC. appropriate blocking used, couple internal power lines input device might oscillate. layout application circuit Part list:
BGA430
coupling capacitors (not used measurements) 100pF 100pF BGA430
Figure
Double sided glass fiber epoxy board, thickness 0.5mm, r=4.5
Preliminary data sheet
2002-05-03
BGA430
Preliminary Package Outline
±0.2
+0.1
±0.1
±0.1
0.65 ±0.05 0.20
0.15 +0.1 -0.05 0.20
Tape Loading Orientation
View Direction Unreeling Position tape: opposite feed hole side
EHA07193
Marking SOT-363 package (for example PHs) corresponds device
Preliminary data sheet
1.25 ±0.1
2.1±0.1
+0.2 acc. 6784
2002-05-03

Band High Gain MMIC eless Silicon Discr etes Edition 20

Top Searches for this datasheet

Other recent searches