High Speed IGBT NPT-technology lower Eoff compared previous gener

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High Speed IGBT NPT-technology lower Eoff compared previous gener

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SKB06N60HS
High Speed IGBT NPT-technology
lower Eoff compared previous generation Short circuit withstand time Designed operation above NPT-Technology 600V applications offers: parallel switching capability moderate Eoff increase with temperature very tight parameter distribution High ruggedness, temperature stable behaviour Complete product spectrum PSpice Models http://www.infineon.com/igbt/ 600V Eoff 80µJ 150°C Package TO-263AB Ordering Code Q67040-S4544
P-TO-263-3-2 (TO-263AB)
Type SKB06N60HS Maximum Ratings Parameter
Symbol
Value
Unit
Collector-emitter voltage collector current 25°C 100°C Pulsed collector current, limited Tjmax Turn safe operating area 600V, 150°C Diode forward current 25°C 100°C Diode pulsed current, limited Tjmax Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation 25°C Operating junction storage temperature Time limited operating junction temperature 150h Soldering temperature, 1.6mm (0.063 in.) from case
ICpul
IFpul Ptot Tstg Tj(tl) -55.+150
15V, 400V, 150°
Allowed number short circuits: <1000; time between short circuits: >1s. Oct-02
Power Semiconductors
SKB06N60HS
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient version, device
Symbol
Conditions
Max. Value 1.85
Unit
RthJC RthJCD RthJA RthJA TO-263AB TO-263AB
Electrical Characteristic, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage VCE(sat) Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES Gate-emitter leakage current Transconductance IGES 2000 1.55 2.05 2.05 3.15 4.00 Symbol Conditions Value min. Typ. max. Unit
Device 50mm*50mm*1.5mm epoxy with (one layer, 70µm thick) copper area collector connection. vertical without blown air.
Power Semiconductors
Oct-02
SKB06N60HS
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured (0.197 in.) from case Short circuit collector current
Ciss Coss Crss QGate IC(SC)
Switching Characteristic, Inductive Load, Tj=25 Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate fall reverse recovery current during Irrm A/µs td(on) td(off) Eoff Energy losses include "tail" diode reverse recovery. 0.10 0.09 0.19 Symbol Conditions Value min. typ. max. Unit
Allowed number short circuits: <1000; time between short circuits: >1s. Leakage inductance Stray capacity test circuit Figure Oct-02
Power Semiconductors
SKB06N60HS
Switching Characteristic, Inductive Load, Tj=150 Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate fall reverse recovery current during Irrm A/µs td(on) td(off) Eoff td(on) td(off) Eoff Energy losses include "tail" diode reverse recovery. Energy losses include "tail" diode reverse recovery. 0.11 0.08 0.19 0.15 0.12 0.27 Symbol Conditions Value min. typ. max. Unit
Leakage inductance Stray capacity test circuit Figure Oct-02
Power Semiconductors
SKB06N60HS
tP=4µs 15µs
COLLECTOR CURRENT
COLLECTOR CURRENT
TC=80°
50µs 200µs
TC=110°C
10Hz
100Hz
1kHz
10kHz
100kHz
0,1A
100V 1000V
SWITCHING FREQUENCY Figure Collector current function switching frequency 150°C, 0.5, 400V, 0/+15V,
VCE, COLLECTOR-EMITTER VOLTAGE Figure Safe operating area 25°C, 150°C;VGE=15V)
COLLECTOR CURRENT
50°C 75°C 100°C 125°
Ptot, POWER DISSIPATION
125°
CASE TEMPERATURE Figure Power dissipation function case temperature 150°C)
CASE TEMPERATURE Figure Collector current function case temperature (VGE 15V, 150°C)
Power Semiconductors
Oct-02
SKB06N60HS
VGE=20V
VGE=20V
COLLECTOR CURRENT
COLLECTOR CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical output characteristic 25°C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical output characteristic 150°C)
J=150°C 25°C -55°
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50°C 50°C 100°C 150°C IC=6A IC=12A
COLLECTOR CURRENT
IC=3A
VGE, GATE-EMITTER VOLTAGE Figure Typical transfer characteristic (VCE=10V)
JUNCTION TEMPERATURE Figure Typical collector-emitter saturation voltage function junction temperature (VGE 15V)
Power Semiconductors
Oct-02
SKB06N60HS
td(off) 100ns
SWITCHING TIMES
SWITCHING TIMES
td(off)
10ns
td(on)
td(on)
COLLECTOR CURRENT Figure Typical switching times function collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=50, Dynamic test circuit Figure
GATE RESISTOR Figure Typical switching times function gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=6A, Dynamic test circuit Figure
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
5,0V 4,5V max. 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V -50°C min. typ.
SWITCHING TIMES
100ns
10ns
td(on)
50°C 100°C 150°0°C 50°C 100°C 150°
JUNCTION TEMPERATURE Figure Typical switching times function junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=6A, RG=50, Dynamic test circuit Figure
JUNCTION TEMPERATURE Figure Gate-emitter threshold voltage function junction temperature 0.5mA)
Power Semiconductors
Oct-02
SKB06N60HS
include losses diode recovery 0,5mJ
Ets*
include losses diode recovery
Ets*
SWITCHING ENERGY LOSSES
SWITCHING ENERGY LOSSES
0,4mJ
Eon* Eoff
0,3mJ
Eon*
0,2mJ
Eoff
0,1mJ
0,0mJ 0,0A
2,5A
5,0A
7,5A
10,0A
COLLECTOR CURRENT Figure Typical switching energy losses function collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=50, Dynamic test circuit Figure
GATE RESISTOR Figure Typical switching energy losses function gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=6A, Dynamic test circuit Figure
ZthJC, TRANSIENT THERMAL RESISTANCE
include losses diode recovery
SWITCHING ENERGY LOSSES
0,2mJ
Ets*
R,(K/W) 0.705 0.561 0.583
Eon* 0,1mJ Eoff
(s)= 0.0341 3.74E-3 3.25E-4
0.01
sing
0,0mJ
100°
150°
JUNCTION TEMPERATURE Figure Typical switching energy losses function junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=6A, RG=50, Dynamic test circuit Figure
PULSE WIDTH Figure IGBT transient thermal resistance
Power Semiconductors
Oct-02
SKB06N60HS
VGE, GATE-EMITTER VOLTAGE
Ciss
120V
480V
CAPACITANCE
100pF
Coss
Crss
10nC 20nC 30nC
10pF
QGE, GATE CHARGE Figure Typical gate charge (IC=6
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical capacitance function collector-emitter voltage (VGE=0V, MHz)
IC(sc), short circuit COLLECTOR CURRENT
tSC, SHORT CIRCUIT WITHSTAND TIME
15µs
10µs
VGE, GATE-EMITETR VOLTAGE Figure Short circuit withstand time function gate-emitter voltage (VCE=600V, start TJ=25°C)
VGE, GATE-EMITETR VOLTAGE Figure Typical short circuit collector current function gateemitter voltage (VCE 400V, 150°C)
Power Semiconductors
Oct-02
SKB06N60HS
300ns
Qrr, REVERSE RECOVERY CHARGE
IF=12A
0,50µ
trr, REVERSE RECOVERY TIME
200ns
IF=12A IF=6A
IF=6A
100ns
IF=3A
0,25µ
IF=3A
200A/µs
400A/µs
600A/µs
800A/µs
0,00µC 200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE Figure Typical reverse recovery time function diode current slope (VR=400V, TJ=150°C, Dynamic test circuit Figure
diF/dt, DIODE CURRENT SLOPE Figure Typical reverse recovery charge function diode current slope (VR=400V, TJ=150°C, Dynamic test circuit Figure
-400A/µs
10,0A
dirr/dt, DIODE PEAK RATE FALL REVERSE RECOVERY CURRENT
800A/µs
Irr, REVERSE RECOVERY CURRENT
-300A/µs
IF=3A
7,5A
IF=12A IF=6A
-200A/µs
5,0A
-100A/µs
2,5A 200A/µs 400A/µs 600A/µs
-0A/µs 200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE Figure Typical reverse recovery current function diode current slope (VR=400V, TJ=150°C, Dynamic test circuit Figure
diF/dt, DIODE CURRENT SLOPE Figure Typical diode peak rate fall reverse recovery current function diode current slope (VR=400V, TJ=150°C, Dynamic test circuit Figure
Power Semiconductors
Oct-02
SKB06N60HS
TJ=-55°C 25°C 150°
2,0V
FORWARD VOLTAGE
FORWARD CURRENT
1,8V
IF12A
1,6V IF=6A
1,4V
1,2V
IF=3A
0,0V
0,5V
1,0V
1,5V
-50°
100°
150°
FORWARD VOLTAGE Figure Typical diode forward current function forward voltage
JUNCTION TEMPERATURE Figure Typical diode forward voltage function junction temperature
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5 0.05 0.02 0.01 single pulse
R,(K/W) 0.523 0.550 0.835 1.592
(s)= 7.25*10-2 6.44*10-3 7.13*10-4 7.16*10-5
1/R1
10µs
100µs
10ms
100ms
PULSE WIDTH Figure Diode transient thermal impedance function pulse width (D=tP/T)
Power Semiconductors
Oct-02
SKB06N60HS
TO-263AB (D2Pak)
symbol
dimensions
[mm] 10.20 1.30 1.60 1.07 0.85 4.50 1.37 9.45 2.50 0.20 5.20 3.00 0.60 10.80 1.15 6.23 4.60 9.40 16.15 9.80 0.70 1.00 1.03 0.65 4.30 1.17 9.05 2.30 0.00 4.20 2.40 0.40
[inch] 0.4016 0.0512 0.0630 0.0421 0.0335 0.1772 0.0539 0.3720 0.0984 0.0079 0.2047 0.1181 0.0236 0.3858 0.0276 0.0394 0.0406 0.0256 0.1693 0.0461 0.3563 0.0906 0.0000 0.1654 0.0945 0.0157
2.54 typ. 5.08 typ.
typ. typ.
typ.
0.5906 typ.
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
Power Semiconductors
Oct-02
SKB06N60HS
Figure Definition diodes switching characteristics
p(t)
Figure Definition switching times
Figure Thermal equivalent circuit
Figure Definition switching losses
Figure Dynamic test circuit Leakage inductance =60nH Stray capacity =40pF.
Published
Power Semiconductors
Oct-02
SKB06N60HS
Infineon Technologies Bereich Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 2002 Rights Reserved. Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Representatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Power Semiconductors
Oct-02

High Speed IGBT NPT-technology lower Eoff compared previous gener

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