Silicon Transistor modulators amplifiers tuners Junction temperat
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BF771W
Silicon Transistor modulators amplifiers tuners
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction soldering point RthJS
measured collector lead soldering point 2For calculation thJA please refer Application Note Thermal Resistance
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF771W
Maximum Ratings Parameter
Marking
Configuration
Package SOT32
Symbol VCEO VCES VCBO VEBO Ptot Tstg
Value
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation
Jun-27-2001
BF771W
Electrical Characteristics 25°C, unless otherwise specified. Parameter characteristics Collector-emitter breakdown voltage Collector-emitter cutoff current Collector-base cutoff current Emitter-base cutoff current current gain IEBO ICBO ICES V(BR)CEO Symbol min. Values typ. max. Unit
Jun-27-2001
BF771W
Electrical Characteristics 25°C, unless otherwise specified. Parameter Symbol Values min. characteristics (verified random sampling) Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure ZSopt Power gain, maximum available ZSopt, ZLopt Transducer gain |S21e|2 13.5 15.5 0.28 0.74 typ. max.
Unit
|S21 (k-(k2-1)1/2
Jun-27-2001
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