Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolu

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Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolu

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SDP04S60, SDD04S60 SDT04S60
Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark reverse recovery temperature influence switching behavior Ideal diode Power Factor Correction 800W
Parameter Continuous forward current, TC=100°C forward current, f=50Hz
TC=25°C, =10ms
Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating storage temperature
Page
Product Summary VRRM
P-TO220-2-2.
P-TO220-3-1.
P-TO252-3-1.
forward recovery
Type SDP04S60 SDD04S60 SDT04S60
Package P-TO220-3-1. P-TO252-3-1. P-TO220-2-2.
Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445
Marking D04S60 D04S60 D04S60
n.c. n.c.
Value 12.5 0.78 36.5
Unit
Maximum Ratings,at unless otherwise specified Symbol IFRMS
Surge repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.
IFRM IFMAX
repetitive peak forward current
=10µs, TC=25°C
value, TC=25°C, tp=10ms
VRRM VRSM Ptot Tstg
-55. +175
2001-12-04
Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction case Thermal resistance, junction ambient, leaded version, device PCB:
P-TO263-3-2: min. footprint P-TO263-3-2: cooling area P-TO252-3-1: min. footprint P-TO252-3-1: cooling area
SDP04S60, SDD04S60 SDT04S60
Symbol min. RthJC RthJA RthJA Values typ. max. Unit
Electrical Characteristics, unless otherwise specified Parameter Static Characteristics Diode forward voltage
=4A, =25°C =4A, =150°C
Symbol min.
Values typ. max.
Unit
1000
Reverse current
=600V, =25°C =600V, =150°C
2Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. Page
1CCM, 85VAC, 150°C, =100°C,
93%,
2001-12-04
SDP04S60, SDD04S60 SDT04S60
Symbol min. Values typ. n.a. max. Unit
Electrical Characteristics,at unless otherwise specified Parameter Characteristics Total capacitive charge
=400V, =4A, /dt=200A/µs, =150°C
Switching time
=400V, =4A, /dt=200A/µs, =150°C
Total capacitance
=0V, =25°C, f=1MHz =300V, =25°C, f=1MHz =600V, =25°C, f=1MHz
Page
2001-12-04
Final data Power dissipation Ptot
SDP04S60, SDD04S60 SDT04S60
Diode forward current parameter:
Typ. forward characteristic parameter:
Typ. forward power dissipation average forward current PF(AV)=f(IF =100°C, tp/T
-40°C 25°C 100°C 125°C 150°C
F(AV)
Page
d=0.1 d=0.2 d=0.5
IF(AV)
2001-12-04
Final data Typ. reverse current reverse voltage =f(VR)
SDP04S60, SDD04S60 SDT04S60
Transient thermal impedance ZthJC parameter
SDP04S60
thJC
25°C 100°C 125°C 150°C
0.50
0.20 0.10 single pulse 0.05 0.02
Typ. capacitance reverse voltage f(VR parameter:
Typ. stored energy EC=f(VR
Page
2001-12-04
Final data Typ. capacitive charge current slope =f(diF /dt) parameter:
SDP04S60, SDD04S60 SDT04S60
IF*2
IF*0.5
A/µs 1000
diF/dt
Page
2001-12-04
SDP04S60, SDD04S60 SDT04S60
P-TO220-3-1 P-TO220-3-
dimensions symbol 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 [mm] 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
2.54 typ. 4.30 4.50 1.17 2.30 1.40 2.72
typ. 0.1693 0.1772 0.0461 0.0906 0.0551 0.107
P-TO252 (D-Pak)
dimensions symbol 2.19 0.76 0.90 5.97 9.40 0.46 0.87 0.51 5.00 4.17 0.26 6.40 5.25 (0.65) 0.63 2.28 2.39 0.98 1.21 6.23 10.40 0.58 1.15 1.02 [mm] 6.73 5.50 (1.15) 0.89 0.2520 0.2067 0.0248 inch] 0.2650 0.2165 0.0350
(0.0256) (0.0453) 0.2520 0.0862 0.0941 0.0299 0.0354 0.2350 0.3701 0.0181 0.0343 0.0201 0.1969 0.1642 0.0102 0.0386 0.0476 0.2453 0.4094 0.0228 0.0453 0.0402
Page
2001-12-04
SDP04S60, SDD04S60 SDT04S60
MAX/MIN-dimensions given inches[mm]
Page
2001-12-04
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
SDP04S60, SDD04S60 SDT04S60
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
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2001-12-04

Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolu

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