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High Current Capability High Power Handling VCE(s) (170 Typical Small


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NSL12AW High Current Surface Mount Silicon VCE(sat) Transistor Battery Operated Applications
High Current Capability High Power Handling VCE(s) (170 Typical Small Size
VOLTS AMPS TRANSISTOR
Benefits:
High Specific Current Power Capability Reduces Required Area Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS 25°C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Electrostatic Discharge Symbol VCEO VCBO VEBO -5.0 -2.0 -3.0 Unit BASE
COLLECTOR
EMITTER
Class Class
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation 25°C Derate above 25°C Thermal Resistance, Junction Ambient Total Device Dissipation 25°C Derate above 25°C Thermal Resistance, Junction Ambient Thermal Resistance, Junction Lead Total Device Dissipation (Single Pulse sec.) Junction Storage Temperature Range FR-4, Minimum Pad, Coverage FR-4, Pad, Coverage Symbol (Note (Note (Note (Note Single Tstg +150 Unit mW/°C °C/W
CASE 419B SOT-363/SC-88 STYLE
DEVICE MARKING
mW/°C °C/W °C/W
Specific Device Code Date Code
ORDERING INFORMATION
Device NSL12AWT1 Package SOT-416 Shipping 3000/Tape Reel
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev.
Publication Order Number: NSL12AW/D
NSL12AW
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Typical Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage -0.1 mAdc, Emitter-Base Breakdown Voltage -0.1 mAdc, Collector Cutoff Current (VCB Vdc, Collector-Emitter Cutoff Current (VCES Vdc, Emitter Cutoff Current (VCES -5.0 Vdc, V(BR)CEO V(BR)CBO V(BR)EBO -5.0 ICBO ICES IEBO -0.03 -0.1 -0.03 -0.1 mAdc -0.02 -0.1 mAdc -7.0 mAdc
CHARACTERISTICS
Current Gain (Note -0.5 -1.5 -0.8 -1.5 -1.0 -1.5 Collector-Emitter Saturation Voltage (Note -0.5 -0.8 -1.0 Base-Emitter Saturation Voltage (Note -1.0 Base-Emitter Turn-on Voltage (Note -1.0 -1.5 Cutoff Frequency -100 -5.0 MHz) Output Capacitance (VCB -1.5 MHz) Pulsed Condition: Pulse Width msec, Duty Cycle VCE(sat) VBE(sat) VBE(on) Cobo -0.81 -0.95 -0.84 -0.95 -0.10 -0.14 -0.17 -0.160 -0.235 -0.290
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NSL12AW
VCE, COLLECTOR EMITTER VOLTAGE VCE, COLLECTOR EMITTER VOLTAGE
BASE CURRENT (mA)
IC/IB
0.001 0.01 IC/IB COLLECTOR CURRENT (AMPS)
Figure Collector Emitter Voltage versus Base Current
Figure Collector Emitter Voltage versus Collector Current
125°C hFE, CURRENT GAIN VBE, BASE EMITTER VOLTAGE
25°C 0.001 0.01 0.001 0.01 COLLECTOR CURRENT (AMPS) 125°C -55°C
25°C
-55°C
COLLECTOR CURRENT (AMPS)
VBE(sat), BASE EMITTER SATURATION VOLTAGE
Figure Current Gain versus Collector Current
Figure Base Emitter Voltage versus Collector Current
COLLECTOR CURRENT
IC/IB
IC/IB
SINGLE PULSE 25°C 0.001 0.01 COLLECTOR CURRENT (AMPS) 0.01 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure Base Emitter Saturation Voltage versus Base Current
Figure Safe Operating Area
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NSL12AW
r(t), MINIMUM NORMALIZED TRANSIENT THERMAL RESISTANCE 0.50 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001
0.00001
0.0001
0.001
0.01
TIME
1000
Figure Normalized Thermal Response
PACKAGE DIMENSIONS
SOT-363/SC-88 CASE 419B-02 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 -0.004 0.004 0.010 0.004 0.012 0.008 0.079 0.087 MILLIMETERS 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 -0.10 0.10 0.25 0.10 0.30 0.20 2.00 2.20
(0.008)
STYLE COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR
Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center Semiconductor P.O. 5163, Denver, Colorado 80217 Phone: 303-675-2175 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com Semiconductor Website: http://onsemi.com additional information, please contact your local Sales Representative.
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NSL12AW/D

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