RDS(on) Cool MOSPower Transistor Feature revolutionary high

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RDS(on) Cool MOSPower Transistor Feature revolutionary high

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SPD04N80C3
RDS(on)
Cool MOSPower Transistor
Feature revolutionary high voltage technology Ultra gate charge Periodic avalanche rated Extreme dv/dt rated Ultra effective capacitances Improved transconductance
P-TO252-3-1
Type SPD04N80C3
Package P-TO252-3-1
Ordering Code Q47040-S4563
Marking 04N80C3
Maximum Ratings, 25°C, unless otherwise specified Parameter Continuous drain current
Symbol
Value
Unit
Pulsed drain current, limited Tjmax Avalanche energy, single pulse
ID=0.8A, VDD=50V
puls Ptot Tstg
-55. +150
Avalanche energy, repetitive limited Tjmax1)
ID=4A, DD=50V
Avalanche current, repetitive limited Tjmax Gate source voltage Power dissipation, 25°C Operating storage temperature
Page
2003-07-02
Final data Maximum Ratings Parameter Drain Source voltage slope
SPD04N80C3
Symbol dv/dt
Value
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction case version, device PCB: min. footprint cooling area Soldering temperature, (0.063 in.) from case Tsold Symbol min. RthJC RthJA Values typ. max. Unit
Electrical Characteristics Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS
ID=240µ, VGS=V DS=800V, GS=0V, Tj=25°C, Tj=150°C
Values typ. max.
Unit
V(BR)DS VGS=0V, ID=4A
Gate-source leakage current
IGSS
GS=20V, DS=0V GS=10V, =2.5A, Tj=25°C Tj=150°C
Drain-source on-state resistance RDS(on)
Gate input resistance
f=1MHz, open Drain
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2003-07-02
SPD04N80C3
Electrical Characteristics unless otherwise specified Parameter
Transconductance Input capacitance Output capacitance Reverse transfer capacitance
Symbol Ciss Coss Crss
Conditions min.
VDS2*ID*R DS(on)max, ID=2.5A VGS=0V, VDS=25V, f=1MHz
Values typ. 15.6 33.7 max.
Unit
Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related
Turn-on delay time Rise time Turn-off delay time Fall time
VGS=0V, VDS=0V 480V
td(on) td(off)
VDD=400V, VGS=0/10V, ID=4A, RG=22
Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
DD=640V, ID=4A
DD=640V, ID=4A, GS=0
V(plateau) VDD=640V, ID=4A
1Repetitve avalanche causes additional power losses that calculated =EAR*f. 2Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. 3Soldering temperature TO-263: 220°C, reflow
o(er) o(tr)
fixed capacitance that gives same stored energy Coss while rising from VDSS. fixed capacitance that gives same charging time Coss while rising from VDSS.
Page
2003-07-02
SPD04N80C3
Electrical Characteristics, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate fall reverse recovery current Irrm dirr
GS=0V, IF=IS R=640V, IF=IS diF/dt=100A/µs
Symbol
Conditions min.
TC=25°C
Values typ. max.
Unit
A/µs
Typical Transient Thermal Characteristics Symbol
Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.033 0.063 0.113 0.432 0.423 0.14
Value typ.
Unit
Symbol
Value typ.
Unit
Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00008691 0.0003336 0.0004755 0.001405 0.003503 0.036 Ws/K
th,n
case
xternal eatsink
th,n
Page
2003-07-02
SPD04N80C3
Power dissipation
Safe operating area
Ptot (TC)
SPD04N80C3
parameter TC=25°C
Ptot
0.001 0.01
Transient thermal impedance
Typ. output characteristic
ZthJC (tp) parameter: tp/T
(VDS); =25°C parameter:
ZthJC
6.5V
0.05 0.02 0.01 single pulse
5.5V
Page
2003-07-02
SPD04N80C3
Typ. output characteristic
Typ. drain-source resistance
(VDS); =150°C parameter:
RDS(on)=f(ID) parameter: Tj=150°C,
RDS(on)
6.5V
5.5V
4.5V
5.5V
4.5V
Drain-source on-state resistance
Typ. transfer characteristics
RDS(on) (Tj) parameter
SPD04N80C3
RDS(on)max parameter:
25°C
DS(on)
150°C
Page
2003-07-02
SPD04N80C3
Typ. gate charge (QGate)
Forward characteristics body diode
(VSD) parameter:
SPD04N80C3
parameter: pulsed
SPD04N80C3
(98%) (98%)
QGate
Avalanche
Avalanche energy
(tAR) par.:
(Tj) par.:
Tj(START)=25°C Tj(START)=125°C
Page
2003-07-02
SPD04N80C3
Drain-source breakdown voltage V(BR)DSS (Tj)
SPD04N80C3
Avalanche power losses
parameter: =0.1mJ
V(BR)DSS
Typ. capacitances
Typ. Coss stored energy
(VDS) parameter: =0V,
Eoss=f(VDS)
Ciss
Coss
Crss
Page
2003-07-02
SPD04N80C3
Definition diodes switching characteristics
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2003-07-02
SPD04N80C3
P-TO-252-3-1 (D-PAK)
Page
2003-07-02
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
SPD04N80C3
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Page
2003-07-02

RDS(on) Cool MOSPower Transistor Feature revolutionary high

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