Cool MOSPower Transistor Feature revolutionary high voltage techn
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SPD07N60C2 SPU07N60C2
Cool MOSPower Transistor
Feature revolutionary high voltage technology Worldwide best DS(on) TO-251 TO-252 Ultra gate charge Periodic avalanche rated Extreme dv/dt rated Ultra effective capacitances Improved noise immunity
P-TO251
Product Summary RDS(on)
P-TO252
Type SPD07N60C2 SPU07N60C2
Package P-TO252 P-TO251
Ordering Code Q67040-S4312 Q67040-S4311
Marking 07N60C2 07N60C2
Maximum Ratings, 25°C, unless otherwise specified Parameter Continuous drain current
Symbol
Value
Unit
Pulsed drain current, limited Tjmax Avalanche energy, single pulse
=5.5A, =50V
puls dv/dt Ptot Tstg
14.6 -55. +150 V/ns
Avalanche energy, repetitive limited Tjmax
=7.3A, =50V
Avalanche current, repetitive limited Tjmax Reverse diode dv/dt
=7.3A, di/dt=100A/µs, Tjmax=150°C
Gate source voltage Power dissipation, 25°C Operating storage temperature
Page
2002-10-07
Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction case Thermal resistance, junction ambient, leaded version, device PCB: min. footprint cooling area Linear derating factor Soldering temperature, (0.063 in.) from case Electrical Characteristics, unless otherwise specified Static Characteristics Drain-source breakdown voltage
=0V, =0.25mA
SPD07N60C2 SPU07N60C2
Symbol min. RthJC RthJA RthJA Tsold
Values typ. max. 0.66
Unit
V(BR)DSS V(BR)DS VGS(th) IDSS
Drain-source avalanche breakdown voltage
=0V, =7.3A
Gate threshold voltage,
=350µA
Zero gate voltage drain current
0.54
Gate-source leakage current
=20V, VDS=0V
IGSS RDS(on)
Drain-source on-state resistance
=10V, ID=4.6A, =25°C
Gate input resistance MHz, open drain
1Repetitve avalanche causes additional power losses that calculated 2Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. Page
2002-10-07
Final data Electrical Characteristics unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
=350V, =7.3A, =350V, =7.3A
SPD07N60C2 SPU07N60C2
Symbol
Conditions min.
Values typ. max. 13.5
Unit
Ciss Coss Crss
DS2*I DS(on)max, ID=4.6A GS=0V, DS=25V, f=1MHz
Effective output capacitance, Co(er)
GS=0V, DS=0V 480V
d(on) d(off)
DD=380V, GS=0/13V, ID=7.3A, RG=12, Tj=125°C
16.5
V(plateau) =350V, =7.3A
o(er) fixed capacitance that gives same stored energy Coss while rising from VDSS 2Co(tr) fixed capacitance that gives same charging time Coss while rising from VDSS
Page
2002-10-07
Final data Electrical Characteristics, unless otherwise specified Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate fall reverse recovery current Irrm dirr
GS=0V, F=IS R=350V, diF/dt=100A/µs
SPD07N60C2 SPU07N60C2
Symbol
Conditions min.
Values typ. max. 14.6 1275
Unit
TC=25°C
A/µs
Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.024 0.052 0.065 0.172 0.177 0.064 Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0001354 0.0004561 0.0007717 0.001013 0.00738 0.04 Ws/K Unit Symbol Value typ. Unit
th,n
case
xternal eatsink
th,n
Page
2002-10-07
Final data Power dissipation Ptot
SPD07N60C2
SPD07N60C2 SPU07N60C2
Safe operating area parameter =25°C
Ptot
0.001 0.01
Transient thermal impedance ZthJC parameter: tp/T
Typ. output characteristic (VDS Tj=25°C parameter:
ZthJC
0.05 0.02 0.01 single pulse
Page
2002-10-07
Final data Typ. output characteristic (VDS Tj=150°C parameter:
SPD07N60C2 SPU07N60C2
Typ. drain-source resistance RDS(on) =f(ID parameter: =150°C,
8.5V
RDS(on)
7.5V
6.5V
8.5V 7.5V 6.5V
Drain-source on-state resistance RDS(on) parameter
SPD07N60C2
Typ. transfer characteristics RDS(on)max parameter:
RDS(on)
Page
2002-10-07
Final data Forward characteristics body diode (VSD parameter:
SPD07N60C2
SPD07N60C2 SPU07N60C2
Typ. switching time inductive load, =125°C par.: =380V, VGS=0/+13V, ID=7.3
td(off) td(on)
(98%) (98%)
Typ. switching losses1) inductive load, Tj=125°C par.: =380V, VGS=0/+13V,
includes SDP06S60 diode commutation losses. This chart helps estimate switching power losses. values different under other operating conditions.
Typ. switching losses1) f(RG inductive load, =125°C par.: =380V, VGS=0/+13V,ID =7.3A
includes SDP06S60 diode commutation losses. 1This chart helps estimate switching power losses. values different under other operating conditions.
0.25
Eon*
0.15
Eoff
0.15
Eoff
0.05 0.05
Page
2002-10-07
Final data Avalanche (tAR par.:
SPD07N60C2 SPU07N60C2
Avalanche energy par.:
j(START) =25°C
j(START) =125°C
Drain-source breakdown voltage V(BR)DSS
SPD07N60C2
Avalanche power losses parameter: =0.5mJ
(BR)DSS
Page
2002-10-07
Final data Typ. capacitances (VDS) parameter: =0V,
SPD07N60C2 SPU07N60C2
Typ. Coss stored energy Eoss=f(VDS
Ciss
Coss
Crss
Definition diodes switching characteristics
Page
2002-10-07
Final data P-TO-252-3-1 (D-PAK)
SPD07N60C2 SPU07N60C2
+0.15 -0.10
±0.1
+0.05 -0.10 +0.08 -0.04
±0.1
±0.15
±0.5 6.22 -0.2
0.51
0.15 side
0.75 ±0.1 2.28
0.0.15 +0.08 -0.04 ±0.1
4.57
0.25
GPT09051
metal surfaces plated, except area cut.
P-TO-251-3-1 (I-PAK)
+0.15 -0.10
±0.1
+0.05 -0.10 +0.08 -0.04
±0.1
6.22 -0.2
0.15 side
±0.4
0.75 ±0.1 2.28 4.56 0.25
+0.08 -0.04
GPT09050
metal surfaces plated, except area cut.
Page
2002-10-07
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
SPD07N60C2 SPU07N60C2
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Page
2002-10-07
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