Tjmax RDS(on) P-TO251 Cool MOSPower Transistor Feature
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SPD02N60C3 SPU02N60C3
Tjmax RDS(on)
P-TO251
Cool MOSPower Transistor
Feature revolutionary high voltage technology Ultra gate charge Periodic avalanche rated Extreme dv/dt rated Ultra effective capacitances
P-TO252
Type SPD02N60C3 SPU02N60C3
Package P-TO252 P-TO251
Ordering Code Q67040-S4420
Marking 02N60C3 02N60C3
Maximum Ratings Parameter Symbol Value Unit
Continuous drain current
Pulsed drain current, limited Tjmax Avalanche energy, single pulse
1.35
puls
0.07
Avalanche energy, repetitive limited Tjmax1)
Avalanche current, repetitive limited Tjmax Gate source voltage static Gate source voltage >1Hz) Power dissipation, 25°C Operating storage temperature
Ptot
-55. +150
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2003-10-02
SPD02N60C3 SPU02N60C3
Symbol dv/dt Value Unit V/ns
Maximum Ratings Parameter Drain Source voltage slope
Thermal Characteristics Parameter Thermal resistance, junction case Thermal resistance, junction ambient, leaded version, device PCB: min. footprint cooling area Symbol min.
RthJC RthJA
Values typ. max.
Unit
RthJA
Soldering temperature, (0.063 in.) from case
Tsold
Electrical Characteristics, Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS
ID=80µ, VGS=VDS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C
Values typ. max.
Unit
V(BR)DS VGS=0V, ID=0.25A
Gate-source leakage current
IGSS
VGS=30V, VDS=0V VGS=10V, ID=1.1A, Tj=25°C Tj=150°C
Drain-source on-state resistance RDS(on)
Gate input resistance
f=1MHz, open Drain
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2003-10-02
SPD02N60C3 SPU02N60C3
Values min. typ. 1.75 15.7 max. Unit
Electrical Characteristics unless otherwise specified Parameter
Transconductance Input capacitance Output capacitance Reverse transfer capacitance
Symbol Ciss Coss Crss
Conditions
DS2*I D*RDS(on)max, ID=1.1A GS=0V, DS=25V, f=1MHz
Effective output capacitance, Co(er) energy related Effective output capacitance, Co(tr) time related
Turn-on delay time Rise time Turn-off delay time Fall time
GS=0V, DS=0V 480V
td(on) td(off)
DD=350V, GS=0/10V, ID=1.8A, RG=25
Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
VDD=420V, ID=1.8A
12.5
VDD=420V, ID=1.8A, VGS=0
V(plateau) VDD=420V, ID=1.8A
1Repetitve avalanche causes additional power losses that calculated =EAR*f. 2Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. fixed capacitance that gives same stored energy Coss while rising from
o(er)
DSS.
o(tr) fixed capacitance that gives same charging time Coss while rising from VDSS.
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2003-10-02
SPD02N60C3 SPU02N60C3
Values min. typ. max. A/µs Unit
Electrical Characteristics, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate fall reverse recovery current Typical Transient Thermal Characteristics Symbol Value typ. Unit Symbol Value typ. Unit Irrm dirr
VGS=0V, IF=IS VR=420V, IF=IS diF/dt=100A/µs
Symbol
Conditions
TC=25°C
Thermal resistance 0.184 0.306 1.207 0.974 0.251
Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00002806 0.0001113 0.0001679 0.000547 0.001388 0.019 Ws/K
th,n
case
xternal eatsink
th,n
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2003-10-02
SPD02N60C3 SPU02N60C3
Power dissipation
Safe operating area
Ptot (TC)
SPD02N60C3
parameter C=25°C
Ptot
0.001 0.01
Transient thermal impedance
Typ. output characteristic
ZthJC parameter: tp/T
(VDS); Tj=25°C parameter:
V6.5
ZthJC
V4.5
0.05 0.02 0.01 single pulse
V5.5
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2003-10-02
SPD02N60C3 SPU02N60C3
Typ. output characteristic
Typ. drain-source resistance
(VDS); Tj=150°C parameter:
RDS(on)=f(ID) parameter: Tj=150°C,
6.5V
4.5V
5,5V
RDS(on)
5.5V
4.5V
6.5V
Drain-source on-state resistance
Typ. transfer characteristics
RDS(on) (Tj) parameter
SPD02N60C3
RDS(on)max parameter:
25°C
RDS(on)
150°C
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2003-10-02
SPD02N60C3 SPU02N60C3
Typ. gate charge (QGate)
Forward characteristics body diode
(VSD) parameter:
SPD02N60C3
parameter: pulsed
SPD02N60C3
(98%) (98%)
QGate
Typ. drain current slope di/dt inductive load, 125°C
Typ. switching time
(RG), inductive load, j=125°C par.: DS=380V, VGS=0/+13V, ID=1.8
par.: VDS=380V, VGS=0/+13V, ID=1.8A
1000
A/µs
di/dt(on)
di/dt
td(off)
di/dt(off)
td(on)
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2003-10-02
SPD02N60C3 SPU02N60C3
Typ. switching time
Typ. drain source voltage slope dv/dt f(RG), inductive load, 125°C
(ID), inductive load, j=125°C par.: VDS=380V, VGS=0/+13V,
par.: DS=380V, VGS=0/+13V, ID=1.8A
85000
tdoff
V/ns dv/dt
45000
dv/dt(on)
0.25
25000
tdon
dv/dt(off)
0.75
1.25
5000
Typ. switching losses
Typ. switching losses
(ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V,
0.01
f(RG), inductive load, Tj=125°C par.: DS=380V, VGS=0/+13V, ID=1.8A
0.0425
0.008
0.0325
0.007
0.0275
0.006
0.0225
0.005
0.0175
0.004
Eoff
0.0125
Eoff
0.003
0.0075
0.002 0.25
0.75
1.25
0.0025
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2003-10-02
SPD02N60C3 SPU02N60C3
Avalanche
Avalanche energy
(tAR) par.:
(Tj) par.: 1.35
Tj(START) =25°C
Tj(START) =125°C
Drain-source breakdown voltage V(BR)DSS (Tj)
SPD02N60C3
Avalanche power losses
parameter: AR=0.07mJ
V(BR)DSS
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2003-10-02
SPD02N60C3 SPU02N60C3
Typ. capacitances
Typ. Coss stored energy
(VDS) parameter: GS=0V,
Eoss=f(VDS)
Eoss
Ciss
Crss
Coss
Definition diodes switching characteristics
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2003-10-02
SPD02N60C3 SPU02N60C3
P-TO-252-3-1 (D-PAK)
P-TO-251-3-1 (I-PAK)
+0.15 -0.10
±0.1
+0.05 -0.10 +0.08 -0.04
±0.1
6.22 -0.2
0.15 side
±0.4
0.75 ±0.1 2.28 4.56 0.25
+0.08 -0.04
GPT09050
metal surfaces plated, except area cut.
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2003-10-02
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
SPD02N60C3 SPU02N60C3
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
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2003-10-02
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