Tjmax RDS(on) 0.95 Cool MOSPower Transistor Feature revoluti

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Tjmax RDS(on) 0.95 Cool MOSPower Transistor Feature revoluti

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SPD04N50C3
Tjmax RDS(on) 0.95
Cool MOSPower Transistor
Feature revolutionary high voltage technology Ultra gate charge Periodic avalanche rated Extreme dv/dt rated Ultra effective capacitances Improved transconductance
P-TO252-3-1
Type SPD04N50C3
Package P-TO252-3-1
Ordering Code Q67040-S4574
Marking 04N50C3
Maximum Ratings Parameter Continuous drain current Pulsed drain current, limited Tjmax Avalanche energy, single pulse Avalanche energy, repetitive limited Tjmax1) Avalanche current, repetitive limited Tjmax Gate source voltage Gate source voltage >1Hz) Power dissipation, 25°C Operating storage temperature Ptot -55. +150 puls Symbol 13.5 Value Unit
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2003-10-07
Final data Maximum Ratings Parameter Drain Source voltage slope
SPD04N50C3
Symbol dv/dt
Value
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction case Thermal resistance, junction ambient, leaded version, device PCB: min. footprint cooling area Soldering temperature, (0.063 in.) from case Electrical Characteristics, Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS GS=0V, ID=4.5A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th)
ID=200µ, VGS=VDS DS=500V, VGS=0V, Tj=25°C, Tj=150°C
Symbol min. RthJC RthJA RthJA Tsold
Values typ. max.
Unit
Values typ. 0.85 max.
Unit
0.95
Gate-source leakage current
GS=20V, VDS=0V GS=10V, ID=2.8A, Tj=25°C Tj=150°C
Drain-source on-state resistance RDS(on)
Gate input resistance
f=1MHz, open Drain
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2003-10-07
Final data Electrical Characteristics unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
DD=400V, ID=4.5A, GS=0 DD=400V, ID=4.5A
SPD04N50C3
Symbol Ciss Coss Crss
Conditions min.
DS2*I D*RDS(on)max, ID=2.8A GS=0V, DS=25V, f=1MHz
Values typ. max.
Unit
Effective output capacitance, Co(er)
GS=0V, DS=0V 400V
td(on) td(off)
DD=350V, GS=0/10V, ID=4.5A, RG=18
V(plateau) DD=400V, ID=4.5A
1Repetitve avalanche causes additional power losses that calculated =EAR*f. 2Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. fixed capacitance that gives same stored energy Coss while rising from
o(er)
DSS.
o(tr) fixed capacitance that gives same charging time Coss while rising from VDSS.
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2003-10-07
Final data Electrical Characteristics, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate fall reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.039 0.074 0.132 0.555 0.529 0.169 Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 Unit Symbol Value typ. rr/dt
=0V, F=IS =400V, IF=IS diF/dt=100A/µs
SPD04N50C3
Symbol
Conditions min.
TC=25°C
Values typ. max. 13.5
Unit
A/µs
Unit
0.00007347 0.0002831 0.0004062 0.001215 0.00276 0.029
Ws/K
th,n
case
xternal eatsink
th,n
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2003-10-07
Final data Power dissipation Ptot (TC)
SPD04N50C3
SPD04N50C3
Safe operating area parameter C=25°C
Ptot
0.001 0.01
Transient thermal impedance ZthJC parameter: tp/T
Typ. output characteristic (VDS); Tj=25°C parameter:
6.5V
ZthJC
0.05 0.02 0.01 single pulse
5.5V
4.5V
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2003-10-07
Final data Typ. output characteristic (VDS); Tj=150°C parameter:
SPD04N50C3
Typ. drain-source resistance RDS(on)=f(ID) parameter: Tj=150°C,
6.5V
4.5V
RDS(on)
6.5V
5.5V
5.5V
4.5V
Drain-source on-state resistance RDS(on) (Tj) parameter
SPD04N50C3
Typ. transfer characteristics RDS(on)max parameter:
25°C
RDS(on)
150°C
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2003-10-07
Final data Typ. gate charge (QGate parameter: pulsed
SPD04N50C3
SPD04N50C3
Forward characteristics body diode (VSD) parameter:
SPD04N50C3
(98%) (98%)
QGate
Avalanche (tAR) par.:
Avalanche energy (Tj) par.:
Tj(START) =25°C
Tj(START) =125°C
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2003-10-07
Final data Drain-source breakdown voltage V(BR)DSS (Tj)
SPD04N50C3
SPD04N50C3
Avalanche power losses parameter: AR=0.4mJ
V(BR)DSS
Typ. capacitances (VDS) parameter: GS=0V,
Typ. Coss stored energy Eoss=f(VDS)
Ciss
Coss
Eoss
Crss
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2003-10-07
SPD04N50C3
Definition diodes switching characteristics
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2003-10-07
Final data P-TO-252-3-1 (D-PAK)
SPD04N50C3
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2003-10-07
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
SPD04N50C3
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
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2003-10-07

Tjmax RDS(on) 0.95 Cool MOSPower Transistor Feature revoluti

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