Tjmax RDS(on) Cool MOSPower Transistor Feature revolutionary
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SPD02N50C3
Tjmax RDS(on)
Cool MOSPower Transistor
Feature revolutionary high voltage technology Ultra gate charge Periodic avalanche rated Extreme dv/dt rated Ultra effective capacitances Improved transconductance
P-TO252-3-1
Type SPD02N50C3
Package P-TO252-3-1
Ordering Code Q67040-S4570
Marking 02N50C3
Maximum Ratings Parameter Symbol Value Unit
Continuous drain current
Pulsed drain current, limited Tjmax Avalanche energy, single pulse
1.35
puls
0.07
Avalanche energy, repetitive limited Tjmax1)
Avalanche current, repetitive limited Tjmax Gate source voltage Gate source voltage >1Hz) Power dissipation, 25°C Operating storage temperature
Ptot
-55. +150
Page
2003-10-07
SPD02N50C3
Maximum Ratings Parameter Drain Source voltage slope
Symbol dv/dt
Value
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction case Thermal resistance, junction ambient, leaded version, device PCB: min. footprint cooling area Symbol min.
RthJC RthJA
Values typ. max.
Unit
RthJA
Soldering temperature, (0.063 in.) from case
Tsold
Electrical Characteristics, Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS
ID=80µ, VGS=VDS VDS=500V, VGS=0V, Tj=25°C, Tj=150°C
Values typ. max.
Unit
V(BR)DS VGS=0V, ID=1.8A
Gate-source leakage current
IGSS
VGS=20V, VDS=0V VGS=10V, ID=1.1A, Tj=25°C Tj=150°C
Drain-source on-state resistance RDS(on)
Gate input resistance
f=1MHz, open Drain
Page
2003-10-07
SPD02N50C3
Electrical Characteristics unless otherwise specified Parameter
Transconductance Input capacitance Output capacitance Reverse transfer capacitance
Symbol Ciss Coss Crss
Conditions min.
DS2*I D*RDS(on)max, ID=1.1A GS=0V, DS=25V, f=1MHz
Values typ. max.
Unit
Effective output capacitance, Co(er) energy related Effective output capacitance, Co(tr) time related
Turn-on delay time Rise time Turn-off delay time Fall time
GS=0V, DS=0V 400V
td(on) td(off)
DD=350V, GS=0/10V, ID=1.8A, RG=25
Gate Charge Characteristics Gate source charge Gate drain charge Gate charge total Gate plateau voltage
VDD=400V, ID=1.8A
VDD=400V, ID=1.8A, VGS=0
V(plateau) VDD=400V, ID=1.8A
1Repetitve avalanche causes additional power losses that calculated =EAR*f. 2Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air. fixed capacitance that gives same stored energy Coss while rising from
o(er)
DSS.
o(tr) fixed capacitance that gives same charging time Coss while rising from VDSS.
Page
2003-10-07
SPD02N50C3
Electrical Characteristics, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate fall reverse recovery current Irrm dirr
VGS=0V, IF=IS VR=400V, IF=IS diF/dt=100A/µs
Symbol
Conditions min.
TC=25°C
Values typ. max.
Unit
A/µs
Typical Transient Thermal Characteristics Symbol
Thermal resistance 0.184 0.306 1.207 0.974 0.251
Value typ.
Unit
Symbol
Value typ.
Unit
Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00002806 0.0001113 0.0001679 0.000547 0.001388 0.019 Ws/K
th,n
case
xternal eatsink
th,n
Page
2003-10-07
SPD02N50C3
Power dissipation
Ptot (TC)
SPD02N50C3
Safe operating area
parameter C=25°C
Ptot
0.001 0.01
Transient thermal impedance
ZthJC parameter: tp/T
Typ. output characteristic
(VDS); Tj=25°C parameter:
V6.5
ZthJC
V4.5
0.05 0.02 0.01 single pulse
V5.5
Page
2003-10-07
SPD02N50C3
Typ. output characteristic
(VDS); Tj=150°C parameter:
Typ. drain-source resistance
RDS(on)=f(ID) parameter: Tj=150°C,
6.5V
4.5V 5,5V
RDS(on)
5.5V 4.5V
6.5V
Drain-source on-state resistance
RDS(on) (Tj) parameter
SPD02N50C3
Typ. transfer characteristics
RDS(on)max parameter:
25°C
RDS(on)
150°C
Page
2003-10-07
SPD02N50C3
Typ. gate charge
(QGate)
Forward characteristics body diode
(VSD) parameter:
SPD02N50C3
parameter: pulsed
SPD02N50C3
(98%) (98%)
QGate
Avalanche
(tAR) par.:
Avalanche energy
(Tj) par.: 1.35
Tj(START) =25°C
Tj(START) =125°C
Page
2003-10-07
SPD02N50C3
Drain-source breakdown voltage
V(BR)DSS (Tj)
SPD02N50C3
Avalanche power losses
parameter: AR=0.07mJ
V(BR)DSS
Typ. capacitances
(VDS) parameter: GS=0V,
Typ. Coss stored energy
Eoss=f(VDS)
Ciss
Eoss
Coss Crss
Page
2003-10-07
SPD02N50C3
Definition diodes switching characteristics
Page
2003-10-07
SPD02N50C3
P-TO-252-3-1 (D-PAK)
Page
2003-10-07
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
SPD02N50C3
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Page
2003-10-07
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