Silicon Switching Diode high-speed switching applications Electrical i
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Top Searches for this datasheet
BAS28.
Silicon Switching Diode high-speed switching applications Electrical insulated diodes
BAS28/W
Type BAS28 BAS28W
Parameter Diode reverse voltage Peak reverse voltage Forward current
Package SOT143 SOT343
Configuration parallel pair parallel pair
Symbol Ptot Tstg Symbol
RthJS
Marking
Value Unit
Maximum Ratings 25°C, unless otherwise specified
Surge forward current, Total power dissipation BAS28W, BAS28, 31°C 103°C
Junction temperature Storage temperature Thermal Resistance Parameter Junction soldering point1) BAS28 BAS28W
1For
calculation RthJA please refer Application Note Thermal Resistance
Value
Unit
Feb-21-2003
BAS28.
Electrical Characteristics 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Breakdown voltage V(BR)
(BR)
Reverse current
1000 1200 1250
Forward voltage
Characteristics Diode capacitance Reverse recovery time measured Test circuit reverse recovery time
D.U.T.
EHN00019
Oscillograph
Oscillograph: 0.35ns,
Feb-21-2003
Pulse generator: 100ns, 0.05, 0.6ns,
BAS28.
Reverse current Parameter
Parameter
BAS28
EHB00035
0.005 0.01 0.02 0.05
10-2 10-6
10-5
10-4
10-3
10-2
Forward current
(VF)
Peak forward current
Forward Voltage
(TA)
EHB00037
(tp)
EHB00036
10-1
Feb-21-2003
BAS28.
Forward current BAS28 Forward current BAS28W
IFmax/ IFDC
RthJS
0.05 0.02 0.01 0.005
BAS28W
Permissible Puls Load RthJS
Permissible Pulse Load IFmax IFDC BAS28W
0.005 0.01 0.02 0.05
Feb-21-2003
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