Technology Beginning 1984 with introduction Power IV®, maintained posi

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Advanced Power Technology
Technology Beginning 1984 with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments this market. commitment maintain enhance this position technological leader controlled devices Diodes deliver products which contribute customers success delivering higher performance power systems. Service Outstanding technology only part story. global network stocking distributors, representatives applications engineers place support phases your product design, evaluation procurement activities. world which demands superior execution, weve numerous awards service leader. Quality commitment excellence things Whether evaluating quality products, technical assistance, customer service quality internal communications systems, excellence standard. understand that ISO9001, MIL-PRF-19500 only beginning.
ISO9001 Certified
MIL-PRF-19500
CONTENTS
MOSFETs
Page
10-11 14-16 17-19
Loss Power 7MOSFETs Loss Power 7FREDFETs Standard High Performance Power MOSFETs Standard High Performance Power FREDFETs LINEAR MOSFETs Power MOSFETs IGBTs (Insulated Gate Bipolar Transistors) DIODES Fast Recovery Epitaxial Diodes (FREDs)
High Voltage Schottky Diodes Application Specific Power Modules (ASPMs) Custom Products Hermetic Hi-Rel Products Products Package Outline Drawings
Loss Power 7MOSFETs
High PowerHigh SpeedHigh Efficiency
Introducing latest generation MOSFETs with lowest on-resistance, gate charge, total losses given footprint. Designed meet most advanced SMPS design requirements higher reliability, power density, efficiency, this generation MOSFETs dramatically lowers largest contributors power losses SMPS applications. CONDUCTION LOSSES On-Resistance (RDS(ON)) been lowered thermal resistance lowered given chip size SWITCHING LOSSES Combining ultra gate charge (Qg) proprietary aluminum metal gate structure results MOSFET capable extremely fast switching very switching losses. Total gate charge (Qg) Miller gate charge (Qgd) have been reduced 60%. Like Power MOSFETs, Power 7utilizes resistance aluminum metal gate structure. This allows faster gate signal propagation than possible with conventional polysilicon gate structures. addition, Power 7employs gate design layouts extremely internal chip equivalent gate resistances (EGR) that order magnitude lower than competitive devices provides very uniform switching across entire chip. result faster switching speeds, faster than previous generation Power MOSFETs. RESULT higher efficiency, more power less space. lowest power loss Figure Merit conventional high power MOSFETs industry RDS(ON) additon, like Power MOSFETs, Power 7devices extremely rugged. AVALANCHE ENERGY RATED Power 7devices 100% tested guaranteed avalanche energy. HIGH GATE RUPTURE VOLTAGE Thick high quality gate oxide allows specification continuous operation transient operation gate voltage. Power 7provides industry leading spurious turnon immunity HIGH NOISE IMMUNITY. Higher Gate Threshold voltage -Vgs(th), volts minimum. REDUCED SHOOT THROUGH SUSCEPTIBILITY.increased gate threshold voltage -Vgs(th), ultralow equivalent gate resistance (EGR) optimized input capacitances (Qgs,Qgd). Industry leading high Figure Merit Vgs(th) Qgs/Qgd HIGH COMMUTATING dv/dt CAPABILITY.from defect tolerant linear cell design very parasitic bipolar base resistance.
families POWER 7MOSFETs offered: MOSFETs applications utilizing intrinsic body drain diode FREDFETs applications utilizing intrinsic body drain diode. These MOSFETs have body drain diode optimized fast recovery high commutating dv/dt capability.
Summary Advantages Power 7Devices
CIRCUIT REQUIREMENT
Ruggedness Reliability
SOLUTION
High Avalanche Energy Capability High Diode Commutating dv/dt Capability
7MOSFETs Good
7FREDFETs Best
Reduced Power Dissipation
Ease Drive
High Cdv/dt noice immunity -High Vgs(th) -Low -High Qgs/Qgd Ratio Fast Intrinsic Body-Drain diode
On-Resistance RDS(ON) Gate Charge
Loss POWER MOSFETs
BVDSS Volts
1200 1000
RDS(ON) Ohms
1.400 1.200 0.900 0.780 0.520 0.430 0.380 0.290 0.250 0.210 0.240 0.180 0.160 0.140 0.036 0.034
(cont) Amps
Watts typ, typ,
1210 1300 1210 1300 1210 1300 1210 1300 1300 1210 1300 1300 1300 1300
TO-247 Part Number
APT1201R4BLL APT1201R2BLL APT10090BLL APT10078BLL APT8052BLL APT8043BLL APT6038BLL APT6029BLL APT6025BLL APT6021BLL APT5024BLL APT5018BLL APT5016BLL APT5014BLL APT20M36BLL APT20M34BLL
Package Style
TO-247
TO-247
D3PAK
PAK[S]
Part Numbers PAK[S] packages replace with part number RDS(ON) Ohms
0.670 0.570 0.450 0.350 0.240 0.200 0.170 0.130 0.100
BVDSS Volts
1200 1000
(cont) Amps
Watts typ, typ,
2500 3000 2500 3000 2500 3000 1600 2500 3000 1600 2500 3000 2500 3000
T-MAXPart Number
APT12067B2LL APT12057B2LL APT10045B2LL APT10035B2LL APT8024B2LL APT8020B2LL APT6017B2LL APT6013B2LL APT6010B2LL APT5010B2LL APT50M75B2LL APT50M65B2LL APT20M20B2LL APT20M16B2LL
Package Style
T-Max
T-MAX [B2]
0.100 0.075 0.065
TO-264
0.020 0.016
TO-264[L]
Part Numbers TO-264 packages replace with part number
Loss POWER MOSFETs
BVDSS Volts
1200 1000
RDS(ON) Ohms
0.400 0.260 0.140 0.075 0.050
(cont) Amps
Watts typ, typ,
3200 3200 3200 3200 3200
TO-264 MAXPart Number
APT12040L2LL APT10026L2LL APT8014L2LL APT60M75L2LL APT50M50L2LL
Package Style
TO-264
MAX[L2]
BVDSS Volts
1200
RDS(ON) Ohms
0.670 0.570 0.400 0.310 0.450 0.350 0.260 0.210 0.240 0.200 0.140 0.110 0.170 0.130 0.100 0.075 0.060 0.100 0.075 0.065 0.050 0.038 0.020 0.010
(cont) Amps
Watts typ, typ,
2500 3000 3200 3600 2500 3000 3200 3600 2500 3000 3200 3600 1600 2500 3000 3200 3600 1600 2500 3000 3200 3600 2500 3600
ISOTOP® Part Number
APT12067JLL APT12057JLL APT12040JLL APT12031JLL APT10045JLL APT10035JLL APT10026JLL APT10021JLL APT8024JLL APT8020JLL APT8014JLL APT8011JLL APT6017JLL APT6013JLL APT6010JLL APT60M75JLL APT60M60JLL APT5010JLL APT50M75JLL APT50M65JLL APT50M50JLL APT50M38JLL APT20M20JLL APT20M10JLL
Package Style
1000
ISOTOP®[J] (ISOLATED BASE)
MOSFET/FRED COMBI PRODUCTS POWER FACTOR CORRECTION BOOST CONFIGURATION Reduced parts count discretes. Improved circuit performance reduced inductance. 0.075
2500
APT50M75JLLU2
Loss POWER FREDFETs
High PowerHigh SpeedHigh Efficiency
What FREDFET? MOSFET with intrinsic body diode optimized fast reverse recovery time (trr) improved commutating dv/dt capability. POWER 7FREDFETs have improved features benefits POWER 7MOSFETs addition Using proprietary platinum lifetime control process, performance intrinsic body drain diode Power 7MOSFET improved. Faster Intrinsic Diode Reverse Recovery reverse recovery time (trr) been reduced thereby eliminating external FRED Schottky rectifiers certain circuit configurations. Other Benefits proprietary platinum process provides added advantages soft recovery, lower leakage current, lower recovery charge more temperature independent performance than alternative processes used improve intrinsic diode performance. Applications FREDFETs Power 7FREDFETs should specified under following conditions: Whenever intrinsic body drain diode MOSFET expected carry forward current. soft switched circuits, where body diode carries current.
FREDFET
MOSFET FREDFET Improved Ruggedness ruggedness Intrinsic Diode Reverse trinsic diode also been improved, allowing imRecovery proved commutating dv/dt ratings.
Note: standard MOSFETs made available FREDFETs. BVDSS Volts 1000 RDS(ON) Ohms 0.900 0.780 0.520 0.430 0.380 0.290 0.250 0.210 0.240 0.180 0.160 0.140 0.036 0.034 (cont) Amps Watts typ, typ, 1210 1300 1210 1300 1210 1300 1300 1210 1300 1300 1300 1300 max, TO-247 Part Number APT10090BFLL APT10078BFLL APT8052BFLL APT8043BFLL APT6038BFLL APT6029BFLL APT6025BFLL APT6021BFLL APT5024BFLL APT5018BFLL APT5016BFLL APT5014BFLL APT20M36BFLL APT20M34BFLL
MOSFET
Package Style
TO-247
TO-247
PAK[S]
Part Numbers PAK[S] packages replace with part number RDS(ON) Ohms 0.260 0.140 0.075 0.050 (cont) Amps Watts typ, typ, max, BVDSS Volts 1000 TO-264 Part Number 3200 3200 3200 3200 APT10026L2FLL APT8014L2FLL APT60M75L2FLL APT50M50L2FLL
Package Style
TO-264
MAX[L2]
Loss POWER FREDFETs
BVDSS Volts 1000
RDS(ON) Ohms 0.450 0.350
(cont) Amps
Watts
typ,
typ,
2500 3000 2500 3000 1600 2500 3000 1600 2500 3000 2500 3000
max,
T-MAX Part Number APT10045B2FLL APT10035B2FLL APT8024B2FLL APT8020B2FLL APT6017B2FLL APT6013B2FLL APT6010B2FLL APT5010B2FLL APT50M75B2FLL APT50M65B2FLL APT20M20B2FLL APT20M16B2FLL
Package Style
T-Max
0.240 0.200
0.170 0.130 0.100
T-MAX [B2]
0.100 0.075 0.065
TO-264
0.020 0.016
TO-264[L]
Numbers TO-264 packages replace with part number
1000
0.450 0.350 0.260 0.230
2500 3000 3200 3600 2500 3000 3200 3600 1600 2500 3000 3200 3600 1600 2500 3000 3200 3600 2500 3600
APT10045JFLL APT10035JFLL APT10026JFLL APT10021JFLL APT8024JFLL APT8020JFLL APT8014JFLL APT8011JFLL APT6017JFLL APT6013JFLL APT6010JFLL APT60M75JFLL APT60M60JFLL APT5010JFLL APT50M75JFLL APT50M65JFLL APT50M50JFLL APT50M38JFLL APT20M20JFLL APT20M10JFLL
(ISOLATED BASE)
0.240 0.200 0.140 0.110
0.170 0.130 0.100 0.075 0.060
ISOTOP®[J]
0.100 0.075 0.065 0.050 0.038
0.020 0.010
Standard High Performance Power MOSFETs
High Power.High Speed.High Efficiency
Introduced 1997 designed meet most advanced SMPS design requirements higher reliability, power density, efficiency that time, Power still provide best trade-off between performance cost some applications. Like Power MOSFETs, Power utilizes resistance aluminum metal gate structure. This allows faster gate signal propagation than possible with conventional polysilicon gate structures. result extremely internal chip equivalent gate resistances (EGR) that order magnitude lower than competitive devices which enables uniform high speed switching across entire chip. families POWER MOSFETs offered: MOSFETs applications utilizing intrinsic body drain diode FREDFETs applications utilizing intrinsic body drain diode. These MOSFETs have body drain diode optimized fast recovery high commutating dv/dt capability. table below summary advantages POWER DEVICES
CIRCUIT REQUIREMENT
Ruggedness Reliability
High Avalanche Energy Capability High Diode Commutating dv/dt Capability
SOLUTION
MOSFET Good
FREDFET Best
Reduced Power Dissipation
On-Resistance RDS(ON)
High Gate Oxide Rupture Voltage -High Vgs(th) -Low -High Qgs/Qgd Ratio Fast Intrinsic Body-Drain diode
Yes*
Yes*
*Higher Than Power 7BVDSS Volts
1200
RDS(ON) Ohms 1.600 1.500 1.000 0.860 0.750 0.650 0.560 0.450 0.350 0.300 0.250 0.280 0.240 0.200 0.170 0.150 0.200 0.160 0.140 0.120 0.085 0.070 0.045 0.040 0.038 0.025 0.019
ID(Cont.) Amps 75**
Watts
typ,
typ,
1210 1300 1210 1300 1210 1300 1210 1300 1300 1210 1300 1300 1300 1210 1300 1300 1300 1300 1300 1300 1300 1500 1500
TO-247 Part Number APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6045BVR APT6035BVR APT6030BVR APT6025BVR APT5028BVR APT5024BVR APT5020BVR APT5017BVR APT5015BVR APT4020BVR APT4016BVR APT4014BVR APT4012BVR APT30M85BVR APT30M70BVR APT20M45BVR APT20M40BVR APT20M38BVR APT10M25BVR APT10M19BVR
Package Style
1000
TO-247
TO-247[B]
D3PAK
PAK[S]
IDmax limited package
Numbers PAK[S] packages replace with part number
Standard High Performance Power MOSFETs
BVDSS Volts 1200 1000 RDS(ON) Ohms 0.800 0.600 0.500 0.400 0.300 0.240 0.200 0.150 0.110 0.140 0.100 0.085 0.080 0.070 0.040 0.022 0.018 0.011 0.009 ID(Cont.) Amps 100** 100** 100** 100** Watts typ, typ, 2500 3000 2500 3000 2500 3000 1600 2500 3000 1600 2500 3000 3000 2500 2500 2500 3000 2500 3000 Part Number APT12080B2VR APT12060B2VR APT10050B2VR APT10040B2VR APT8030B2VR APT8024B2VR APT6020B2VR APT6015B2VR APT6011B2VR APT5014B2VR APT5010B2VR APT50M85B2VR APT50M80B2VR APT40M70B2VR APT30M40B2VR APT20M22B2VR APT20M18B2VR APT10M11B2VR APT10M09B2VR Package Style
T-Max
T-MAX [B2]
TO-264
TO-264[L]
IDmax limited package
Numbers TO-264 packages replace with part number
1200 1000 1200 1000
0.450 0.300 0.180 0.080 0.060 0.800 0.400 0.500 0.430 0.250 0.300 0.280 0.150 0.150 0.130 0.075 0.100 0.085 0.050 0.070 0.035 0.040 0.019 0.022 0.019 0.011 0.011 0.007
3200 3200 3200 3200 3200 2500 3600 2500 1300 3600 2500 1300 3600 2500 1300 3600 2500 1300 3600 2500 3600 2500 3600 2500 1300 3600 2500 3600
APT12045L2VR APT10030L2VR APT8018L2VR APT60M80L2VR APT50M60L2VR APT12080JVR APT12040JVR APT10050JVR APT10043JVR APT10025JVR APT8030JVR APT8028JVR APT8015JVR APT6015JVR APT6013JVR APT60M75JVR APT5010JVR APT50M85JVR APT50M50JVR APT40M70JVR APT40M35JVR APT30M40JVR APT30M19JVR APT20M22JVR APT20M19JVR APT20M11JVR APT10M11JVR APT10M07JVR
MAX[L2]
TO-264
ISOTOP®[J] (ISOLATED BASE)
Standard High Performance Power FREDFETs
High PowerHigh SpeedHigh Efficiency
What FREDFET? MOSFET with intrinsic body drain diode optimized fast reverse recovery time (trr) improved commutating dv/dt capability. Power FREDFETs have improved features benefits Power MOSFETs addition using proprietary lifetime control process, performance intrinsic body drain diode Power MOSFET improved. Faster Intrinsic Diode Recovery reverse recovery time (trr) been reduced thereby eliminating external FRED Schottky rectifiers certain circuit configurations. Other Benefits proprietary lifetime process provides added advantages soft recovery lower recovery charge compared MOSFETs. Applications FREDFETs Power FREDFETs should specified under following conditions: Whenever intrinsic body drain diode MOSFET expected carry forward current. soft switched circuits, where body diode carries current.
FREDFET
MOSFET FREDFET Intrinsic Diode Reverse Improved Ruggedness ruggedness intrinRecovery diode also been improved, allowing improved commutating dv/dt ratings
MOSFET
Volts Ohms
1000 1.100 0.860 0.750 0.650 0.560 0.300 0.250 0.240 0.200 0.170 0.150 0.085 0.070 0.045 0.038 0.025 0.019
BVDSS RDS(ON) (cont) Amps
Watts typ, typ,
TO-247
Package Style
max, Part Number
APT1001R1BVFR APT10086BVFR APT8075BVFR APT8065BVFR APT8056BVFR APT6030BVFR APT6025BVFR APT5024BVFR APT5020BVFR APT5017BVFR APT5015BVFR APT30M85BVFR APT30M70BVFR APT20M45BVFR APT20M38BVFR APT10M25BVFR APT10M19BVFR
1210 1300 1210 1300 1300 1300 1210 1300 1300 1300 1300 1300 1300 1300 1500 1500
TO-247
TO-247[B]
D3PAK
PAK[S]
Part Numbers PAK[S] packages replace with part number
Standard High Performance Power FREDFETs
BVDSS RDS(ON) Volts Ohms
1000 0.400 0.300 0.240 0.110 0.100 0.085 0.080 0.022 0.018 0.009 0.500 0.400 0.300 0.240 0.150 0.110 0.100 0.085 0.080 0.040 0.022 0.018 0.009 0.300 0.180 0.080 0.060 0.500 0.250 0.300 0.150 0.100 0.085 0.050 0.040 0.019 0.022 0.01
ID(cont) Amps Watts typ, typ,
3000 2500 3000 3000 2500 3000 3000 2500 3000 3000 2500 3000 2500 3000 2500 3000 2500 3000 3000 2500 2500 3000 3000 3200 3200 3200 3200 2500 3600 2500 3600 2500 1300 3600 2500 3600 2500 3600
max,
Part Number
APT10040B2VFR APT8030B2VFR APT8024B2VFR APT6011B2VFR APT5010B2VFR APT50M85B2VFR APT50M80B2VFR APT20M22B2VFR APT20M18B2VFR APT10M09B2VFR APT10050LVFR APT10040LVFR APT8030LVFR APT8024LVFR APT6015LVFR APT6011LVFR APT5010LVFR APT50M85LVFR APT50M80LVFR APT30M40LVFR APT20M22LVFR APT20M18LVFR APT10M09LVFR APT10030L2VFR APT8018L2VFR APT60M80L2VFR
Package Style
T-Max
1000
T-MAX[B2]
TO-264
1000 1000
TO-264[L]
TO-264
APT50M60L2VFR
MAX[L2]
APT10050JVFR APT10025JVFR APT8030JVFR APT8015JVFR APT5010JVFR APT50M85JVFR APT50M50JVFR APT30M40JVFR APT30M19JVFR ISOTOP®[J] APT20M22JVFR (ISOLATED BASE) APT20M11JVFR
IDmax limited package
Standard High Performance MOSFET/FRED Combi Products
BVDSS Volts RDS(ON) Ohms ID(Cont.) Amps Watts typ, typ, Part Number Package Style
POWER FACTOR CORRECTION BOOST CONFIGURATION 0.100 2500 APT5010JVRU2
MOTOR DRIVE BUCK CONFIGURATION 0.100 2500 APT5010JVRU3
ISOTOP®[J] (ISOLATED BASE)
BOOST CONFIGURATION
BUCK CONFIGURATION
Reduced parts count discretes. Improved circuit performance reduced inductance. Consult your local representative directly other voltages
LINEAR MOSFETs
What Linear MOSFET?
MOSFET specifically designed more robust than standard MOSFET when operated with concurrent high voltage high current near conditions (>100msecs). times capability high voltage compared other MOSFET technologies optimized switching applications.
Technology Innovation
Typical Applications:
Active loads above volts such dynamic loads testing power supplies, batteries, fuel cells, etc. High voltage, high current constant current sources.
gain (low packing density) device provides best performance high voltage. modified proprietary MOSFET technology develop lower gain device with enhanced performance high voltage, linear applications. This Linear MOSFET typically provides 1.5-2.0
BVDSS Volts 1000
RDS(ON) Ohms 0.60 0.12
ID(Cont.) Amps 18.0 43.0
Watts
SOA1 Watts
Part Number APL1001J
Package Style
APL501J
ISOTOP®[J]
POWER MOSFETs
Higher VoltageSmaller System SizeLower System Cost
Power MOSFETs optimized high voltage power applications MHz. geometry been optimized high power efficiency gain. Power MOSFETs plastic TO-247 package internal isolation substrate create common source configuration. source directly connected center heatsink tab; insulator needed user. This provides maximum thermal efficiency without expense assembly problems drain isolation. Symmetric wire bonding schemes inside insure that both pin-out versions each device perfect mirror image pairs. This configuration allows easy layout pushpull parallel pairs circuit board symmetry separation input output sections. higher power levels, ceramic packages push-pull ARF450 high power 1500 series permits operation 200°C maximum junction temperature while providing superior thermal performance. ARF460 1500 series have been designed superior mismatch ruggedness. used these part types have more Forward-Biased Safe Operating Area (FBSOA) than previous devices. increased FBSOA high voltage breakdown headroom make these parts POUT Freq. VDD/BVDSS Volts 125V/500V 50V/150V 50V/150V 100V/300V 100V/300V 125V/500V 65V/200V 250V/1kV 250V/1kV 250V/1kV 250V/1kV 125V/500V 125V/500V 250V/1kV 65V/200V 125V/500V 125V/500V 250V/1kV 65V/200V RqJC °C/W 0.76 0.75 0.75 0.75 0.75 0.70 0.70 0.60 0.60 0.55 0.55 0.55 0.50 0.50 0.50 0.26 0.12 0.12 0.12 Package Style Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure particularly rugged difficult load environments. series ideal class operation well high efficiency nonlinear operation. High Voltage Operation Historically, Power MOSFETs were operated supply voltages less. This limitation been removed combining high voltage MOSFET technology with specific geometries. amplifier operation possible from volts. Higher Voltage Higher operating voltage means higher load impedances. 150W output from supply load impedance only ohms. 125V, load impedance ohms. higher impedance allows simpler transformers fewer combiners. Paralleled devices still operate into reasonable convenient impedances. Increasing operating voltage also lowers current required given power output, reducing size weight cost other system components.
Look these packages coming soon!
Part Number ARF449A/B ARF440* ARF441* ARF442* ARF443* ARF463A/B ARF464A/B ARF444* ARF445* ARF446 ARF447 ARF448A/B ARF460A/B ARF461A/B ARF462A/B ARF450 ARF1500 ARF1501 ARF1502
Class
Figure TO-247
Gate Source Drain
TO-247
Figure
TO-247
Drain Source Gate
Figure T-Pack
Figure T1-Pack
*Not Recommended designs.
IGBTs (Insulated Gate Bipolar Transistors)
High Power.High Speed.High Efficiency
IGBT combination MOSFET Bipolar Transistor within single chip such combines best attributes each transistor into single device. simplified equivalent circuit n-channel IGBT shown Figure simplified structure n-channel MOSFET driving base bipolar transistor Darlington configuration. bipolar current conduction allows operation high on-state current densities with on-state voltage drop MOSFET structure allows ease gate control. speed IGBT faster than power bipolar transistor fast MOSFET.
Figure IGBT Equivalent Circuit
characteristics IGBT determined technology used (materials, process, design). IGBTs generally classified into basic technologies (Non-Punch Through) (Punch Through). cross-section each technology shown below Figures technology differs from that buffer layer been added such that electric field terminates buffer layer rather than Drift Region.
Figure IGBT Cross Section
Figure IGBT Cross Section
Current IGBT products offered utilize technology. technology IGBTs planned introduction 2H01. IGBT products focused SMPS applications targeted high frequency switching from tens hundred used cost effective alternative MOSFETs many applications. providing both types technologies covers widest range applications design requirements.
There Product Families IGBTs:
Thunderbolt IGBT® Family volt only, designated part number, these devices capable operation 100kHz hard switching applications. Fast IGBT Family 1200 volt devices, designated part number, these devices designed operation 100kHz hard switching applications.
(2H01 Introduction)
7Ultrafast IGBT Family Designated part number, these devices available volt 1200 volt operation higher frequencies than devices.
IGBTs (Insulated Gate Bipolar Transistors)
different technologies inherently have different electrical characteristics. summary advantages each technology presented Table Conduction Losses Figure shows typical tradeoff switching times on-state voltage drop IGBT. given switching speed technology generally higher VCE(ON) than wider base PNP. This difference magnified further fact that VCE(ON) increases with temperature (positive temperature coefficient) whereas VCE(ON) decreases with temperature (negative temperature coefficient). should noted that very fast device have higher CE(ON) than device slower switching speeds. Switching Losses given VCE(ON), IGBTs have higher speed switching capability with lower total switching energy (Ets). This narrow base along with lifetime reduction. 7Ultrafast IGBTs have enhanced MOSFET characteristics (Ultralow from APTs proprietary metal gate design ultralow gate charge) further reduce switching losses.
Table Advantages Different IGBT Technologies
Circuit Requirement Conduction Losses VCE(ON) Switching Losses Device Ruggedness Ease Paralleling Technology Solution Best Best Best Best
Figure
Ruggedness Technology more rugged wider base lower gain bipolar transistor. IGBTs short circuit, avalanche energy, RBSOA rated while IGBTs with higher switching frequency capability RBSOA rated. Paralleling This easier with technology positive temperature coefficient VCE(ON) similar MOSFET. IGBTs from have slightly negative temperature coefficient paralleled require added precautions which considered good design practice paralleling IGBTs. High Temperature Operation turn-off speed switching losses remain relatively constant over entire operating temperature range. This characteristic combination emitter injection efficiency high lifetime. turn-off speed switching losses increase with temperature, extremely absence tail current. This combination higher emitter injection efficiency lifetime.
IGBTs (Insulated Gate Bipolor Transistors)
Volts
1200
CE(ON)
(25°C)
(25°C)
(90-110°C)
Volts
ONLY)
Amps
Amps
Watts
Part Number
APT35GP120B APT30GP60B APT40GP60B APT35GP120B2D APT30GP60B2D APT40GP60B2D APT35GP120JD APT30GP60JD APT40GP60JD APT8GT60KR APT12GT60KR APT15GT60KR APT20GT60KR APT30GT60KR APT12GT60BR APT15GT60BR APT20GT60BR APT30GT60BR APT40GT60BR APT60GT60BR APT60GT60JR APT15GT60BRD APT30GT60BRD APT60GT60JRD APT11GF120KR APT20GF120KR APT20GF120BR APT33GF120BR APT50GF60BR APT50GF120B2R APT100GF60B2R APT50GF120LR APT100GF60LR APT11GF120BRD APT20GF120BRD APT33GF120B2RD APT50GF60B2RD APT33GF120LRD APT50GF60LRD APT40GF120JRD APT50GF120JRD APT60GF120JRD APT100GF60JRD
Package Style
TO-247
TO-220
SINGLE (IGBT SINGLE
7UltraFast IGBTs
COMBI (IGBT FRED)
1200 1200
T-MAX ISOTOP®
TO-220[K]
SINGLE (IGBT ONLY)
Thunderbolt® IGBTs
TO-220
TO-247
TO-247[B]
TO-247
TO-264
COMBI (IGBT FRED)
ISOTOP® TO-247
TO-264[L]
SINGLE (IGBT ONLY)
Fast IGBTs
TO-220
T-Max
1200
COMBI (IGBT FRED)
1200 1200 1200 1200
TO-247 T-MAX TO-264 TO-247 T-MAX TO-264 ISOTOP®
T-MAX[B2]
1200 1200 1200 1200 1200 1200 1200
ISOTOP®[J]
limited package
Fast Recovery Epitaxial Diodes (FREDs)
High PowerHigh SpeedHigh Efficiency
Figure below shows typical tradeoff between reverse recovery switching times (trr) forward voltage drop (VF) FRED lower switching times (faster switching speeds) result higher forward voltage drop. specific process design define curve. critical part manufacturing process lifetime control lower material lifetime lower switching times (move left curve). lifetime control technique proprietary platinum diffusion process more platinum faster switching times. There families high performance diode products offered: FREDs where lifetime process (amount platinum) optimized minimizing product trr. These should used applications where switching conduction losses both important. Higher Frequency FREDs where lifetime process optimized very fast switching speeds (more platinum) expense forward voltage drop. These should used higher frequency applications applications where reduction switching losses most important higher forward voltage drop tolerated. These FREDs ideal boost converter applications.These FREDs capable replacing GaAs rectifiers high frequency applications fraction cost. volt products, volt FREDs with high levels platinum series package. using much heavier platinum doped volt FREDs series, considerable decrease reverse recovery time achieved standard heavier doped volt FREDs. volt products there single FRED with high levels platinum.
Figure below shows comparison reverse recovery switching characteristics types high performance diodes. Note that higher frequency FREDs peak reverse recovery current (IRM) reverse recovery charge (Qrr) significantly lower.
Figure Tradeoff Between
Figure Reverse Recovery Switching Comparison
Higher Frequency FRED
Higher Frequency
FRED
FRED
proprietary platinum lifetime control process results performance advantages compared FREDs built with alternative processes lifetime control: High Temperature Capability less degradation performance high temperatures allowing increased maximum junction temperature safe operation. Junction temperature maximum without concern excessively high Leakage currents thermal runaway. Softer Recovery minimize Very Fast switching times (trr) along with extremely reverse recovery current (Irm) reverse recovery charge (Qrr) given forward voltage.
Single Dual (FREDs)
VRMM Volts 1200 1000 IF(AV) Amps IRM(125°C) max, Volts typ, (25°C) (150°C) (25°C) (100°C) 1.15 1.15 0.93 TO-247 Part Number APT30D120B APT60D120B APT30D100B APT60D100B APT15D60B APT30D60B APT60D60B APT30D40B APT60D40B APT30D30B APT60D30B APT30D20B APT60D20B Package Style
TO-247
TO-247[B]
PAK[S]
Numbers Pak[S] packages replace with part number
VRMM Volts 1000 1200
IF(AV) Amps
IRM(125°C) 1000 1000 1000
max, Volts (25°C) (150°C) 1.15 1.15 1.10 1.00 0.93 0.95
typ, (25°C) (100°C)
Part Number APT15D100K APT15D60K APT15D40K APT15D30K APT2X30D120J APT2X60D120J APT2X100D120J APT2X30D100J APT2X60D100J APT2X100D100J APT2X30D60J APT2X60D60J APT2X100D60J APT2X30D40J APT2X60D40J APT2X100D40J APT2X30D30J APT2X60D30J APT2X100D30J APT2X30D20J APT2X60D20J APT2X100D20J
Package Style
TO-220[K]
1000
Antiparallel Configuration (ISOLATED BASE)
ISOTOP®[J]
Parallel Configuration (ISOLATED BASE)
ISOTOP®[J]
Part Numbers Parallel Configuration replace with 101. Example: 2X30D120J becomes 2X31D120J.
CENTER DUAL FREDs
Volts 1000 1000 1000 IF(AV) Amps 1000 RM(125°C) max, Volt
(25°C) (150°C)
typ,
(25°C) (100°C)
Part Number APT15D100BCT APT30D100BCT APT15D60BCT APT30D60BCT APT15D40BCT APT30D40BCT APT30D30BCT APT30D20BCT APT60D100LCT APT60D60LCT APT60D40LCT APT60D30LCT APT60D20LCT APT15D100BHB APT30D100BHB APT30D60BHB APT30D100BCA APT15D60BCA APT30D60BCA APT30D20BCA
Package Style
1.15 1.15 1.15
TO-247[BCT] Common Cathode
TO-264[LCT] Common Cathode
TO-247[BHB] Half Bridge
TO-247[BCA] Common Anode
ratings Center Dual FREDs
Higher Frequency FREDs
Volts IF(AV) Amps IRM(125°C) max, Volt (25°C) (150°C) 1.75 1.60 Package (25°C) (100°C) Part Number Style 12.5 12.5
typ,
APT30DS60B APT15DS60B APT30DS30B APT15DS30B
Figure Figure Figure Figure
Figure Figure
High Voltage Schottky Diodes
High PowerHigh SpeedHigh Efficiency
These Schottky Diodes offer several dramatic improvements over currently used Fast Recovery Epitaxial Diodes (FREDs): lower forward voltage drop (VF) minimize conduction loss enabling higher power conversion efficiencies. softer reverse recovery characteristics resulting reduced avalanche energy rated (EAS) offering improved reliability. power volt telecom rectifiers DC-DC converters free wheeling anti-parallel diodes voltage converters.
Comparative Total Power Losses
0.5, 1.00 0.90 0.80 0.70 0.60 0.50
Power supply designers these schottky diodes improve cost, power density, efficiency their designs. Designs with these schottky diodes experience 10-15% lower losses than FREDs with same voltage ratings. These cost effective Schottky Diodes replace FREDs output rectifiers high
0.40 0.30 0.20 0.10 0.00 VOLT FRED
VOLT SCHOTTKY
VOLT SCHOTTKY
Volts
IF(AV) Amps
IRM(125°C) 5.00 5.00 50.0 25.0 15.0 50.0 25.0 15.0 15.0 5.00 25.0 50.0 50.0 25.0 15.0
TO-2
max, Volts
(25°C) (150°C)
typ,
(25°C) (100°C)
Part Number APT15S20K APT15S20KCT APT100S20B APT60S20B APT30S20B APT100S20S APT60S20S APT30S20S APT30S20BCT APT15S20BCT APT60S20B2CT APT100S20LCT APT2X101S20J APT2X61S20J APT2X31S20J
Fig.
0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95
0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80
Package Style
TO-220
TO-220 Common Cathode
TO-247
PAK[S]
TO-247 Common Cathode
T-MAXCommon Cathode
TO-264 Common Cathode
OTrall
*All Common Cathode ratings
ISOTOP® Parallel
Application Specific Power Modules (ASPMs)
Integration power stage, plus additional functions such control, drive, protection, application software. Designed meet specific needs customers application. Utilizes combination technologies best meet customers application Power Semiconductors: bipolar, MOSFET, IGBT, Diode Packaging: standard custom designs Terminals: screw fast signal feed through, custom designs Substrates: alumina, aluminum nitride, insulated metal substrate
state technologies combined with innovative circuit mechanical design providing: Increased Power Density Size Reduction Electrical Charateristics Enhancement Improved Thermal Management Protection Against Reverse Engineering
Custom, Value-Added Solutions Meet Your Specific Power Application Requirements
addition broad line leading edge products this catalog, dedicated providing innovative solutions customers. This means working with customers solve their procurement, manufacturing application problems. known supplier that provides solutions that others cannot, will not, provide. These include, limited Custom products including special designs, processes, packaging. Supply chain management requirements. Strategic inventories allow unexpected changes demand. Special testing. Thermal power management. Hi-Rel Testing/Screening
Hermetic Hi-Rel Products
Advanced Power Technology manufactures broad range discrete power semiconductors industrial, military, space applications. focus high voltage, high power, high performance segment this market. APTs technology leadership allows offer latest high performance power MOSFETs, FREDFETs, IGBTs, Diodes. ISO9001 registered, MIL-PRF19500 certified offer TXV, Space Level processing, Custom testing screening well Plastic Up-Screening. Contact your local representative directly copy current Hermetic Hi-Rel Power Semiconductor Product Catalog.
Products
Advanced Power Technologys products available form. information requested from website www.advancedpower.com contact directly copy current Product Catalog.
Package Outline Drawings
TO-220 2-Lead
1.39 (.055) 0.51 (.020) 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230) 16.51 (.650) 14.23 (.560) 3.42 (.135) 2.54 (.100) 4.08 (.161) Dia. 3.54 (.139)
16.51 (.650) 14.23 (.560)
TO-220 3-Lead
1.39 (.055) 0.51 (.020)
Cathode
Drain
10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230)
3.42 (.135) 2.54 (.100)
4.08 (.161) Dia. 3.54 (.139)
6.35 (.250) MAX. 14.73 (.580) 12.70 (.500)
0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140)
6.35 (.250) MAX. 14.73 (.580) 12.70 (.500)
Gate Drain Source
0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140)
Cathode Anode
1.01 (.040) 2-Plcs. 0.38 (.015) 5.33 (.210) 4.83 (.190)
1.01 (.040) 3-Plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190)
1.77 (.070) 3-Plcs. 1.15 (.045)
1.77 (.070) 2-Plcs. 1.15 (.045)
TO-247 3-Lead
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242)
TO-247 2-Lead
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242)
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain
3.50 (.138) 3.81 (.150)
Cathode
20.80 (.819) 21.46 (.845)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Drain Source
19.81 (.780) 20.32 (.800)
Anode
2.21 (.087) 2.59 (.102) 5.45 (.215) 2-Plcs.
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
2.21 (.087) 2.59 (.102)
Cathode
10.90 (.430)
T-MAX
Drain
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098)
TO-264
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079)
19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
2.21 (.087) 2.59 (.102)
5.45 (.215) 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) 2-Plcs.
These dimensions equal TO-247 without mounting hole.
SOT-227
31.5 (1.240) 31.7 (1.248) (.307) (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) places) 11.8 (.463) 12.2 (.480) (.350) (.378) places)
MAX
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079)
19.51 (.768) 20.50 (.807)
5.79 (.228) 6.20 (.244)
Drain
25.48 (1.003) 26.49 (1.043)
(.157) places)
(.157) (.165) places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
2.29 (.090) 2.69 (.106) 2.29 (.090) 2.69 (.106)
(.129) (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
19.81 (.780) 21.39 (.842)
Gate Drain Source
Emitter
Collector
Source terminals shorted internally. Current handling capability equal either Source terminal.
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) 2-Plcs.
Emitter
Gate
Drain (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 1.04 (.041) 1.15 (.045) 13.41 (.528) 13.51 (.532)
T-Pack
.875 .176 .375
Revised 8/29/97 11.51 (.453) 11.61 (.457)
T1-Pack
1.065 .160
.500
Revised 4/18/95
13.79 (.543) 13.99 (.551)
ARF450
0.46 (.018) 0.56 (.022) Plcs} 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082) 5.45 (.215) Plcs.}
.582
1.27 (.050) 1.40 (.055)
3.81 (.150) 4.06 (.160) (Base Lead)
11405
ARF1500
135-05
1.065
1.22 (.048) 1.32 (.052)
.062 .375
Heat Sink (Drain) Leads Plated
.005 .125 .210 .060 typ. .210 .125
.045
.500
Source Drain Gate
.005
dims: inches
.207
.375 .105 typ.
.207
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COLUMBIA STREET BEND, 97702 U.S.A. TEL: (541) 382-8028 1-800-522-0809 FAX: (541) 388-0364 E-mail: custserv@advancedpower.com
EUROPE (ASPMs ONLY)
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reserves right change, without notice, specifications information contained herein. ISOTOP® registered trademark Thomson
August

Technology Beginning 1984 with introduction Power IV®, maintained posi

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