Volts Amps Platinum/Tungsten schottky barrier forward voltage dro

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Volts Amps Platinum/Tungsten schottky barrier forward voltage dro

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MSASC150H45A
Volts Amps
Platinum/Tungsten schottky barrier forward voltage drop Oxide passivated structure very leakage currents Guard ring protection increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, profile ceramic surface mount power package package inductance Very thermal resistance TXV-level (MSASC150H45AV) S-level (MSASC150H45AS) screening i.a.w. Microsemi Internal Procedure 11.50 available
VOLTAGE DROP SCHOTTKY DIODE
Maximum Ratings (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Blocking Voltage Average Rectified Forward Current, 135°C derating, forward current, 135°C Nonrepetitive Peak Surge Current, half-sinewave Peak Repetitive Reverse Surge Current, 1µs, 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction Case SYMBOL VRRM VRWM IF(ave) dIF/dT IFSM IRRM Tstg MAX. (3.75) +175 +175 0.25 UNIT Volts Volts Volts Amps Amps/°C Amps °C/W
Mechanical Outline
Datasheet# MSC0876.PDF
MSASC150H50A
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, SYMBOL IR25 IR100 IR125 VF10 CONDITIONS Vdc, 25°C Vdc, 100°C Vdc, 125°C 20A, 25°C 50A, 25°C 100A, 25°C 150A, 25°C 50A, -55°C 50A, 125°C 100A, 125°C 25°C 25°C 25°C 25°C -55°C TYP. 4500 6400 UNIT
Junction Capacitance Breakdown Voltage
4900
Datasheet# MSC0876.PDF

Volts Amps Platinum/Tungsten schottky barrier forward voltage dro

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